Applied Materials, Inc.

International Business Machines Corporation

Gas Research Institute

Howard E Grunes

Avi Tepman

Zheng Xu

John C Forster

Robert B Lowrance

Praburam Gopalraja

Sergio Edelstein

Sasson Roger Somekh

Jaim Nulman

Mani Subramani

Dmitry Lubomirsky

Anantha K Subramani

Ilya Perlov

Ralf Hofmann

Aihua Chen

Joseph Stevens

Yeuk-Fai Edwin Mok

Ian A Pancham

Alexey Goder

Igor G Kogan

Dana L Andrews

Hua Chung

Stephen J Blumenkranz

Dan Maydan

Ling Chen

Christopher F Lane

Barry Lee Chin

Kevin P Fairbairn

Vincent W Ku

Girish Anant Dixit

Roderick Craig Mosely

Bradley Owen Stimson

Michael N Sugarman

Donald J Olgado

Donald J K Olgado

Eugene Gantvarg

Vincent E Burkhart

Michael Rosenstein

Marc O Schweitzer

Stephen Bruce Brodsky

Joe Stevens

William H McClintock

Richard K Reber

Kelly A Colborne

Fernand Dorleans

Evgueni Gantvarg

Eric C Williams

Dennis J Morrison

A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

Coils for generating a plasma and for sputtering

An apparatus and method for performing uniform gas flow in a processing chamber is provided. In one embodiment, an apparatus is an edge ring that includes an annular body having an annular seal projecting therefrom is provided. The seal is coupled to a side of the annular body opposite a side adapted to seat on the substrate support. In another embodiment, a processing system is provided that includes a chamber body, a lid, a substrate support and a plurality of flow control orifices. The lid is disposed on the chamber body and defining an interior volume therewith. The substrate support is disposed in the interior volume and at least partially defines a processing region with the lid. The flow control orifices are disposed between the substrate support and the lid. The flow control orifices are adapted to control flow of gases exiting the processing region.

Processing chamber configured for uniform gas flow

An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a 'patch' of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

Electroless deposition apparatus

Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while additional material is being sputter deposited onto a substrate. A path positioned within a chamber of the system directs light or other radiation emitted by the plasma to a chamber window or other optical view-port which is protected by a shield against deposition by the conductor material. In one embodiment, the radiation path is folded to reflect plasma light around the chamber shield and through the window to a detector positioned outside the chamber window. Although deposition material may be deposited onto portions of the folded radiation path, in many applications, the deposition material will be sufficiently reflective to permit the emission spectra to be detected by a spectrometer or other suitable detector without significant signal loss. The etching or resputtering may be terminated when the detector detects that an underlying layer has been reached or when some other suitable process point has been reached.

End point detection for sputtering and resputtering

A method and apparatus for plating substrates, wherein the apparatus includes a central substrate transfer enclosure having at least one substrate transfer robot positioned therein. A substrate activation chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate plating chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate spin rinse dry chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot, and an annealing chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. At least one substrate pod loader in communication with the substrate transfer chamber and accessible to the at least one substrate transfer robot is also provided.

Electroless plating system

A robot assembly including multiple independently operable robot assemblies are provided for use in semiconductor wafer processing. The robot assembly includes independent co-axial upper and lower robot assemblies adapted to handle multiple objects. The upper robot is stacked above the lower robot and the two robots are mounted concentrically to allow fast wafer transfer. Concentric drive mechanisms may also be provided for imparting rotary motion to either rotate the robot assembly or extend an extendable arm assembly into an adjacent chamber. Each robot can be either a single blade robot or a dual blade robot. Also provided is an apparatus for processing semiconductor wafers comprising a pre/post process transfer chamber housing multiple independent robot assemblies and surrounded by a plurality of pre-process chambers and post process chambers. Within each process, pre-process and post-process chamber is an apparatus for holding a plurality of stacked wafers. The apparatus includes a wafer lifting and storing apparatus exhibiting a plurality of vertically movable lift pins surrounding the chamber pedestal. The lift pins are configured to receive and hold a plurality of stacked wafers, preferably two, therein.

Multiple independent robot assembly and apparatus for processing and transferring semiconductor wafers

A system/method for interactively monitoring and adjusting product output from a module that includes two or more preparation tools. The output is a result of the coordinated effort of the two or more semiconductor preparation tools making up the module. The first of the tools is capable of implementing a first process on a semiconductor product and producing a first output. The second of the tools is configured to receive as input the first output from the first tool. The second tool is also capable of implementing a second process on the semiconductor product and producing a second output. A module control mechanism is capable of facilitating the exchange of information between the first tool and the second tool so that the module yields a desired semiconductor product output. Certain information can also be exchanged between the first and second tools. Other system/method embodiments for output/production control are also envisioned.

Multi-tool control system, method and medium

A transfer chamber is provided. The transfer chamber has a temperature adjustment plate located in an upper portion of the chamber, a substrate handler located in a lower portion of the chamber, and a rotatable substrate carriage adapted so as to raise and lower between an elevation above a substrate supporting surface of the temperature adjustment plate, and an elevation below a substrate supporting blade of the substrate handler. The rotatable substrate carriage is adapted to transfer a substrate to and from the substrate supporting surfaces of the temperature adjustment plate, and of the substrate handler blade.

Method and apparatus for improved substrate handling

The present invention generally provides a vacuum system having a small-volume load-lock chamber for supporting a substrate set of only two rows of substrates, which provides for quick evacuation and venting of the load-lock chamber to provide a continuous feed load-lock chamber. More particularly, the present invention provides a transfer chamber; one or more processing chambers connected to the transfer chamber; a substrate handling robot disposed in the transfer chamber; and at least one load-lock chamber connected to the transfer chamber, and having one or more substrate support members for supporting one or more stacks of only two substrates per stack. Another aspect of the invention provides a staging, or storage rack associated with or integrated with the load-lock chamber. More particularly, the staging, or storage rack may be located outside the transfer chamber and accessible by a staging robot serving the load-lock chamber. The staging or storage rack may temporarily store processed substrates for cooling of the substrates prior to replacing the substrates within substrate cassettes during idle time of the staging robot. In this way, the substrates may continue to be cooled without interrupting the operation of the load-lock chamber.

Load-lock with external staging area

A method and apparatus are provided for substrate handling. In a first aspect, a temperature adjustment plate is located below a substrate carriage and is configured such that a substrate may be transferred between the temperature adjustment plate and the substrate carriage by lifting and lowering the substrate carriage above and below the top surface of the temperature adjustment plate. The temperature adjustment plate may be configured to heat and/or cool a substrate positioned thereon. In a second aspect, the substrate carriage is magnetically coupled so as to rotate and/or lift and lower magnetically, thereby reducing particle generation via contact between moving parts (and potential chamber contamination therefrom). In a third aspect, a substrate handler positioned below the substrate carriage is both magnetically coupled and magnetically levitated, providing further particle reduction. The magnetic levitation is preferably achieved via four radially disposed and vertically arranged magnet pairs having distance sensors for maintaining desired spacing therebetween. In a most preferred embodiment, one substrate is heated/degassed on a first portion of a temperature adjustment plate in preparation for processing while a second substrate is processed, and a third processed substrate is cooled on a second portion of the temperature adjustment plate.

Embodiments include devices and methods for sputtering material onto a workpiece in a chamber which includes a plasma generation area and a target. A coil is positioned to inductively couple energy into the plasma generation area to generate a plasma. A body is positioned between the workpiece and the target to prevent an amount of target material from being sputtered onto the workpiece. The body prevents an amount of target material from being sputtered onto the workpiece. The body may act as a dark space shield and inhibit plasma formation between the body and the target. The body may also act as a physical shield to block sputtered material from accumulating on the workpiece.

Method and apparatus for forming a uniform layer on a workpiece during sputtering

A recessed coil for a plasma chamber in a semiconductor fabrication system is provided. Recessing the coil reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece.

Recessed coil for generating a plasma

Multiple independent robot assembly and apparatus for processing and

Growing community of inventors

Santa Cruz, CA, United States of America

Howard E Grunes