Lam Research Corporation

Howard Dang

Peter K Loewenhardt

Helen H Zhu

Siyi Li

Thomas S Choi

Eric A Hudson

Sean S Kang

Kenji Takeshita

David Wei

Stephen M Sirard

Mayumi Block

Masahiro Watanabe

A method of dechucking a wafer, with a low-k dielectric layer, held onto an electrostatic chuck by an electrostatic charge in a plasma chamber is provided. The electrostatic clamping voltage is removed. An essentially argon free dechucking gas is provided into the plasma chamber. A dechucking plasma is formed from the dechucking gas in the plasma chamber. The dechucking plasma is stopped.

Wafer electrical discharge control using argon free dechucking gas

A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is preformed on the at least one feature after the at least one feature is etched. The patterned photoresist mask is stripped after the CO conditioning.

Preventing damage to low-k materials during resist stripping

Growing community of inventors

Milpitas, CA, United States of America

Howard Dang