Taiwan Semiconductor Manufacturing Comp. Ltd.

How-Cheng Tsai

Hung-Hsin Liu

Yuan-Ko Hwang

Ming-Kuo Yu

Shih-Shun Chen

Kwang-Chen Wu

Chung-Daw Young

The process of the present invention comprises reactive ion etching of AlFOoxide deposits on aluminum-containing bond pads using feed gases, such as, SF/CF/Ar or Cl/BCL/Ar. whose active plasma etches the AlFOoxide deposits by physical etching and chemical etching for more complete removal of the AlFOoxide deposits.

Method to remove fluorine residue from bond pads

A method for a metal etchback process to form a metal filled semiconductor feature having improved planarity and electrical resistance including a semiconductor wafer having an etched opening lined with a refractory metal containing layer and a blanket deposited metal layer filling the etched opening; spin coating a spin on layer selected from the group consisting of an organic resinous layer and a spin-on glass layer over the metal layer; dry etching in a first etchback process to remove a first portion of the SOL layer to reveal a portion of the metal layer leaving a second portion of the SOL layer overlying the etched opening; dry etching in a second etchback process to remove the metal layer to reveal a portion of the refractory metal containing layer; and, removing the second portion of the SOL layer to form a substantially planar metal filled etched opening.

Method for metal etchback with self aligned etching mask

A method of forming very small silicon nitride spacers in split-gate flash EPROMs is disclosed which prevent the occurrence of &ldquo;write disturb&rdquo;, unwanted reverse tunneling, or erasing. This is accomplished by forming spacers with well controlled dimensions and well defined shapes through a judicious combination of dry etch with wet over-etch technique. The wet etch along with the dry etch widens the process window from a few seconds to several minutes so that the small dimensioned silicon nitride spacers can be better controlled than it has been possible in the past. In a second embodiment, the step of over-etching of the spacers is combined with the step of stripping off of an implant photomask, thus, shortening the manufacturing product cycle.

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Kaohsiung, Taiwan

How-Cheng Tsai