Nippon Steel Corporation

Housei Hirano

Tatsuo Fujimoto

Kohei Tatsumi

Noboru Ohtani

Masashi Nakabayashi

Masakazu Katsuno

Hiroshi Tsuge

Hirokatsu Yashiro

Taizo Hoshino

The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 &#x3bc;m or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm.

SiC single-crystal substrate and method of producing SiC single-crystal substrate

Growing community of inventors

Tokyo, Japan

Housei Hirano