Applied Materials, Inc.

Hou Gong Wang

Bo Zheng

Sang Ho Yu

Salvador P Umotoy

Michael Sterling Jackson

Hua Ai

Xiaoxiong Yuan

Hyman W H Lam

Xiaoxiong (John) Yuan

Hyman Lam

Michael Jackson

Ai Hua

San Ho Yu

Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

Apparatuses and methods for atomic layer deposition

Growing community of inventors

Pleasanton, CA, United States of America

Hou Gong Wang