Jehara Corporation

Hongseub Kim

The present invention relates to a surface treatment apparatus for cleaning or treating (micro etching, etc.) a surface of a TEM sample (substrate) by converting plasma ions into a neutral beam and a separator including an RF cathode connected to an RF supply unit and accelerating ions by self bias is disposed between a plasma generating chamber and a neutral chamber and the ions generated in the plasma generating chamber are converted into a neutral beam through a separator and accelerated and irradiated to a neutral chamber to enable surface treatment without damaging a sample.

Surface treatment apparatus using plasma

Provided is a plasma generator for improving uniformity of plasma. The plasma generator which includes a pair of source electrode unitand bias electrode unitdisposed to face each other in a vacuum chamber and an RF power unitand a bias RF power unitsupplying RF power to the source electrode unitand the bias electrode unit, respectively, comprises a common contact point cc which is connected with a plurality of contact points cp disposed along the edge of the source electrode unit; and an impedance controllerwhich is connected with the common contact point cc to control the impedance.

Plasma generator

An apparatus for generating plasma is provided. The apparatus may include a vacuum chamber and a plasma source part. The plasma source part may include a dielectric part, an upper electrode, and an inductive coil. The dielectric part may be installed to protrude upward along a circumference of a through-hole provided at a top of the vacuum chamber. The upper electrode may be coupled to seal an opened top of the dielectric part. The inductive coil may spirally extend along an outer circumference surface of the dielectric part.

Apparatus for generating plasma

A plasma generating apparatus is provided. The plasma generating apparatus may include a vacuum chamber, an ElectroStatic Chuck (ESC), a first antenna part including a first antenna and a first antenna cover, and a second antenna part including a second antenna and a second antenna cover. The vacuum chamber has a vacant interior and a top sealed by an insulation vacuum plate. The ESC is disposed at a center of the inside of the vacuum chamber. The first antenna is coupled to a through-hole of the second antenna. The first antenna cover airtightly covers a top of the first antenna. The second antenna is coupled to the through-hole of the insulation vacuum plate. The second antenna cover airtightly covers a top of the first antenna part and the second antenna.

Plasma generating apparatus

A plasma source for a substrate is provided. The plasma source may include a source electrode and an impedance box. The source electrode receives a source Radio Frequency (RF) from the external and generates plasma based on capacitive coupling within a vacuum chamber. The impedance box connects at one end to an outer circumference surface of the source electrode, and is grounded at the other end to the vacuum chamber, and controls an electric current flowing from the source electrode to the vacuum chamber by the source RF.

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Suwon-si, South Korea

Hongseub Kim