Samsung Electronics Co., Ltd.

Honglae Park

Satoru Yamada

Junsoo Kim

Chunhyung Chung

Naoto Umezawa

Jaeho Kim

Min Hee Cho

Wonsok Lee

Namho Jeon

Hyoshin Ahn

Inkook Jang

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate; an isolation layer in a first trench, defining an active region of the substrate; a gate structure in a second trench intersecting the active region; and first and second impurity regions spaced apart from each other by the gate structure. The gate structure includes a gate dielectric layer in the second trench; a first metal layer on the gate dielectric layer; and a gate capping layer on the first metal layer. The gate dielectric layer includes Dand NDin an interface region, adjacent the first metal layer, and D is deuterium, N is nitrogen, and Dis positively-charged deuterium.

Semiconductor devices and methods of manufacturing the same

A semiconductor memory device includes a substrate having an active region, word lines extending across the active region, a bit line on the active region between the word lines, a bit line node contact between the bit line and the active region, and a storage node contact on an end portion of the active region, wherein one or more of the bit line node contact or the storage node contact include silicon germanium.

Semiconductor memory devices having bit line node contact between bit line and active region

An image sensor includes a substrate including a photoelectric conversion part therein, and a fixed charge layer provided above the substrate. The fixed charge layer includes a first metal oxide and a second metal oxide, which are different from each other. The first metal oxide includes a first metal, and the second metal oxide includes a second metal different from the first metal. Concentration of the first metal in the fixed charge layer progressively increases from an upper portion of the fixed charge layer to a lower portion of the fixed charge layer.

Image sensor

Growing community of inventors

Seongnam-si, South Korea

Honglae Park