Samsung Electronics Co., Ltd.

Hongbin Shi

Junho Lee

Kang Joon Lee

Soonbum Kim

Hojeong Moon

A semiconductor package includes a lower package including a lower package substrate, a lower semiconductor chip disposed on the lower package substrate, and a lower mold layer disposed on the lower package substrate, and an upper package disposed on the lower package. The upper package includes an upper package substrate and an upper semiconductor chip disposed on the upper package substrate. The semiconductor package additionally includes connection terminals disposed between the lower and upper package substrates. The connection terminals comprise outermost connection terminals and inner connection terminals. The inner connection terminals are disposed between the lower semiconductor chip and outermost connection terminals. The semiconductor package further includes a first under-fill layer disposed between the lower package substrate and the upper package substrate. At least one of the outermost connection terminals is disposed outside of the lower mold layer.

Stack-type semiconductor package

A method of fabricating a semiconductor package includes providing a lower semiconductor package including a lower package substrate, and a lower dummy ball and a lower solder ball on a top surface of the lower package substrate, providing an upper semiconductor package including an upper package substrate, and an upper dummy ball and an upper solder ball on a bottom surface of the upper package substrate, joining the upper dummy ball to the lower dummy ball at a first temperature to form a solder joint, and joining the upper solder ball to the lower solder ball at a second temperature to form a connection terminal.

Method of fabricating a semiconductor package

A method for manufacturing a semiconductor package including providing a first semiconductor package including a first package substrate and a first solder ball, the first package substrate having a first surface and a second surface opposite to the first surface, the first solder ball on the first surface, providing a second semiconductor package including a second package substrate and a second solder ball, the second package substrate having a third surface and a fourth surface opposite to the third surface, the second solder ball on the third surface, forming a depression in the first solder ball, applying flux to the first solder ball to fill the depression, aligning the first semiconductor package and the second semiconductor package with each other such that the second solder ball is inserted into the depression, and performing a reflow process to combine the first solder ball with the second solder ball may be provided.

Method for manufacturing semiconductor package

Provided is a method of fabricating a semiconductor package. The method include providing a lower package with an inner solder ball, providing a conductive material on the inner solder ball to form an outer solder ball enclosing the inner solder ball, providing an upper package with an upper solder ball, on the lower package, performing a first process at a first temperature to join the upper solder ball to the outer solder ball, and performing a second process at a second temperature to unite the upper, inner, and outer solder balls into a connection terminal.

Methods of fabricating a semiconductor package

An electric apparatus may include a plurality of electric patterns arranged on a substrate. Each of the electric patterns may include a pad for connection with a solder ball, an electrical trace laterally extending from a portion of the pad to allow an electrical signal to be transmitted from or to the pad, a first dummy trace laterally extending from other portion of the pad, and a first connection line connecting the first dummy trace to the electrical trace. The first dummy trace may be provided at a position deviated from a straight line connecting the pad to the electrical trace.

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Hwaseong-si, South Korea

Hongbin Shi