Altera Corporation

Xilinx, Inc.

Altera Corportation

Hong Shi

Xiaohong Jiang

Yuanlin Xie

Hui Liu

Suresh Ramalingam

Siow Chek Tan

Li-Sheng Weng

Zhe Li

Tarun Verma

Yee Huan Yew

Po-Wei Chiu

Chiakang Sung

Joseph Huang

Bonnie I Wang

Khai Nguyen

Jaspreet Singh Gandhi

Martin L Voogel

Gamal Refai-Ahmed

James Karp

Parag Upadhyaya

Tony K Ngai

Mohsen Hossein Mardi

Zhaoyin D Wu

William W Bereza

David M Mahoney

Kerry M Pierce

Brian Philofsky

Vincent Hool

William Edward Allaire

Prasun K Raha

Jianmin Zhang

Jianming Huang

Sarajuddin Niazi

Young Soo Lee

Tzu-No Chen

Disclosed herein is a chip package and method for fabricating the same are provided that includes a redistribution layer (RDL) with a plurality of loop and void structures. The chip package includes an integrated circuit (IC) die, and a package substrate. The RDL is disposed between the IC die and the package substrate. The RDL has RDL circuitry that connects the IC die to the package substrate. The RDL circuitry includes a first coil formed in a first metal layer and a second coil formed in a second metal layer. A first end of the second coil is coupled to a second end of the first coil by a first via. A second end of the second coil is the IC die.

Coupled loop and void structure integrated in a redistribution layer of a chip package

A chip package and method for fabricating the same are provided that includes a near-die integrated passive device. The near-die integrated passive device is disposed between a package substrate and an integrated circuit die of a chip package. Some non-exhaustive examples of an integrated passive device that may be disposed between the package substrate and the integrated circuit die include a resistor, a capacitor, an inductor, a coil, a balum, or an impedance matching element, among others.

Chip package with near-die integrated passive device

A semiconductor device system comprises an integrated circuit (IC) die. The IC die is configured to operate in a first operating mode during a first period, and a second operating mode during a second period. The first period is associated with enabling an element of the IC die and a first amount of voltage droop. The second period occurs after the first period and is associated with a second amount of voltage droop. The second amount of voltage droop is less than the first amount of voltage droop.

Integrated circuit package with voltage droop mitigation

A package device comprises a first transceiver comprising a first integrated circuit (IC) die and transmitter circuitry, and a second transceiver comprising a second IC die and receiver circuitry. The receiver circuitry is coupled to the transmitter circuitry via a channel. The package device further comprises an interconnection device connected to the first IC die and the second IC die. The interconnection device comprises a channel connecting the transmitter circuitry with the receiver circuitry, and a passive inductive element disposed external to the first IC die and the second IC die and along the channel.

In-package passive inductive element for reflection mitigation

Various noise isolation structures and methods for fabricating the same are presented. In one example, a substrate for chip package is provided. The substrate includes a core region, top build-up layers and bottom build-up layers. The top build-up layers are formed on a first side of the core region and the bottom build-up layers are formed on a second side of the core region that is opposite the first side. Routing circuitry formed in the bottom build-up layers is coupled to routing circuitry formed in the top build-up layers by vias formed through the core region. A void is formed in the bottom build-up layers. The void is configured as a noise isolation structure. The void has a sectional area that is different in at least two different distances from the core region.

Core cavity noise isolation structure for use in chip packages

A chip package assembly and method for fabricating the same are provided that provide a modular chip stack that can be matched with one or more chiplets. The use of chiplets enables the same modular stack to be utilized in a large number of different chip package assembly designs, resulting much faster development times at a fraction of the overall solution cost.

Modular stacked silicon package assembly

Techniques for electrostatic discharge (ESD) protection in integrated circuit (IC) chip packages methods for testing the same are described that are configured to directs the risk of ESD events through ground and power interconnects preferentially over I/O interconnects to enhance ESD protection in chip packages. In one example, a chip package is provided that includes an IC die, a substrate, and a plurality of interconnects. The plurality of interconnects are exposed on a side of the substrate opposite the IC die. The interconnects provide terminations for substrate circuitry formed within the substrate. At least one of the last 5 interconnects of the plurality of interconnects respectively comprising rows and columns of interconnects disposed along the edges of the substrate that closest to each corner of substrate project farther from the substrate than interconnects within those rows and columns that are configured as I/O interconnects.

Method and apparatus of package enabled ESD protection

Examples of the present disclosure provide example Chip Scale Packages (CSPs). In some examples, a structure includes a first integrated circuit die, a shim die that does not include active circuitry thereon, an encapsulant at least laterally encapsulating the first integrated circuit die and the shim die, and a redistribution structure on the first integrated circuit die, the shim die, and the encapsulant. The redistribution structure includes one or more metal layers electrically connected to the first integrated circuit die.

Chip scale package (CSP) including shim die

An integrated circuit device having a vertical connection interfaces for coupling stacked components are provided that improve communication between the stacked components. The techniques described herein allow for increased signal connection density while reducing potential for crosstalk. For example, a ground to signal ratio of connections between components in a vertical interface configured to carry ground signals relative to connections configured to carry data signals within a bank of connections has an edge to center gradient which reduces the amount of ground connections needed to meet crosstalk thresholds, while increasing the amount of signal connections available for communication between components across the vertical interface.

Low crosstalk vertical connection interface

An interface layout for a vertical interface of a first semiconductor component is disclosed. A first one or more conductors configured to carry power signals extends vertically from the first semiconductor component. A second one or more conductors configured to carry data signals extends vertically from the first semiconductor component. A third one or more conductors configured to carry ground signals extending vertically from the first semiconductor component. The first one or more conductors are further configured to shield and separate the second one or more conductors. A fourth one or more conductors extends horizontally from the first one or more conductors adjacent to and terminating proximal to the third one or more conductors. A fifth one or more conductors extending horizontally from the third one or more conductors adjacent to and terminating proximal to the first one or more conductors and the fourth one or more conductors. The fourth one or more conductors and the corresponding adjacent fifth one or more conductors form a plate capacitor.

Power-ground co-reference transceiver structure to deliver ultra-low crosstalk

An improved power distribution network for an integrated circuit package that reduces the number of power supply pins that are used in the pin array and achieves better operating performance. In a preferred embodiment, the ratio of power supply pins to input/output (I/O) pins is in the range of approximately 1 to 24 to approximately 1 to 52. In this embodiment, the integrated circuit package comprises a substrate, an integrated circuit mounted on the substrate, a first decoupling capacitor mounted on the substrate, and a second decoupling capacitor formed in the integrated circuit. The package is formed by coupling a power supply pin to both the first and second capacitors by a low frequency path and a DC path, respectively, and the first and second capacitors are coupled by a high frequency path.

Power distribution network

An integrated circuit package substrate may include a core layer and dielectric layers formed on top and bottom surfaces of the core layer. Routing traces such as stripline structures may be formed in some of the dielectric layers, whereas plated through hole (PTH) structures may be formed through the core layer. A first pair of PTHs that carry a first differential signal may be orthogonally intertwined with a second pair of PTHs that carry a second differential signal. Solder balls formed at the surface of the package substrate may include a first pair of solder balls that convey a first differential signal that is orthogonally intertwined with respect to a second pair of solder balls that convey a second differential signal. The package substrate may be mounted on a printed circuit board (PCB). Differential PCB vias could use the same BGA orthogonal pattern described above.

Integrated circuit package routing with reduced crosstalk

An integrated circuit (IC) package substrate with non-uniform dielectric layers is disclosed. The IC package substrate is a multilayer package substrate that has dielectric layers and metal layers stacked up alternately. The dielectric layers in the package substrate have different thickness. The metal layers may be ground, signal or power layers. A thicker dielectric layer is placed in between a signal layer and a power layer in the package substrate. The thicker dielectric layer may be at least twice as thick as other dielectric layers in the package substrate. The thicker dielectric layer may provide better impedance control in the package substrate.

IC package with non-uniform dielectric layer thickness

An improved power distribution network comprises a substrate, an integrated circuit mounted on the substrate, first and second tunable decoupling capacitors mounted on the substrate, and a third decoupling capacitor formed in the integrated circuit. The power supply pin is connected to the first, second, and third capacitors; and the first and second capacitors are connected to the third capacitor as well. The capacitance values of the first and second tunable decoupling capacitors may be adjusted to reduce the magnitude of the system level impedance at least at those frequencies having substantial signal jitter to power noise sensitivity.

Tunable power distribution network and method of use thereof

An integrated circuit package having a package substrate, an integrated circuit, and at least one solder ball is provided. The package substrate has first and second surfaces. The integrated circuit may be mounted on the first surface of the package substrate. The solder ball may be coupled to the second surface of the package substrate. The package substrate may include a substrate layer. The substrate layer may include a ground plane with an opening. The opening may be formed just above the solder ball. In one instance, the diameter of the opening is greater than the diameter of the solder ball pad.

Growing community of inventors

Fremont, CA, United States of America

Hong Shi