Infineon Technologies Ag

Osram Gmbh

Kulicke and Soffa Die Bonding Gmbh

Holger Hübner

Axel Kaltenbacher

Vaidyanathan Kripesh

Thomas Röhr

Robert Bergmann

Hans-Jürgen Hacke

Rainer Tilgner

Björn Hoxhold

Max-Gerhard Seitz

Axel Königer

A connecting element can be used for a multi-chip module. The connecting element is provided for establishing an electrical connection between two elements and has a carrier and a first electrically conductive connecting structure on a first main surface of the carrier. The first connecting structure is designed in such a way that the first connecting structure connects the first and second elements to each other. A multi-chip module can have such a connecting element and two elements, wherein the two elements are electrically connected to each other in a wireless manner by the connecting element.

Connecting element for a multi-chip module and multi-chip module

The invention relates to an electronic component including a housing and a first substrate having at least one integrated circuit, a multiplicity of contact surfaces arranged in an arbitrary distribution on the surface of the first substrate. A second substrate forms a housing and is mechanically joined to the surface of the first substrate in a surface-to-surface contact, via an insulating joining layer. The second substrate has contact connection surfaces that are surface-to-surface connected to the contact surfaces of the first substrate in an electrically conductive manner. The second substrate has symmetrically arranged external contact surfaces that are conductively connected to the contact connection surfaces via through-contacts in the second substrate.

Electronic component including a housing and a substrate

For the purpose of contact-connecting an electrical component, in particular a semiconductor component, on a substrate having a conductor structure, a joining temperature is chosen in such a way that the substrate, with a pressure being exerted on the electrical component, experiences a plastic deformation, with the result that the electrical component is pressed together with the conductor structure into the substrate in a positively locking manner. In order to produce the connection between the component and the substrate, use is preferably made of a thin diffusion solder layer which can be processed at temperatures lying below the melting point of the substrate.

Method for contact-connecting an electrical component to a substrate having a conductor structure

A semiconductor component having a material-reinforced contact area formed of a metal layer is disclosed. The contact area is jointly formed by a second metal area of a first metal layer and a fourth metal area of a second metal layer which is to be contacted. A thickness of the contact area material is at least twice that of a single metal layer and thereby prevents penetrative etching when a hole is created for contacting the metal layer.

Semiconductor component having a material reinforced contact area

A soldering agent for use in diffusion soldering processes contains, in a soldering paste, a mixture of at least partially metallic grains of a high-melting metal and a solder metal. In a diffusion soldering process, the solder metal reacts completely with the high-melting metal and metals belonging to parts that are to be joined to one another by the soldering process, to form an intermetallic phase.

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Baldham, Germany

Holger Hübner