Samsung Electronics Co., Ltd.

Hoe-sik Chung

Jin-hang Jung

Young-sun Kim

Sung-ho Lee

Hong Min Lee

Gyu-chan Jeoung

Kwang-seok Choi

Hun-hwan Ha

Young-ho Kim

Hong Kook Lee

Sang-Woong Yoon

Yeong-seon Kim

Jin-a Ryu

Min-gyu Ko

A composition for an anti-reflective layer capable of simultaneously being developed together with a photoresist layer after exposure of the photoresist layer in a photolithography process and a method for forming patterns in a semiconductor device using the composition, wherein the anti-reflective light absorbing layer composition includes a polymer having a (meth)acrylate repeating unit, a light-absorbing group of diazoquinones chemically bound to the (meth)acrylate repeating unit, a photoacid generator, a cross-linker which thermally cross-links the polymer and is decomposed from the polymer by an acid, and a catalyst for the cross-linking reaction of the polymer. The method for forming patterns in a semiconductor device involves forming an anti-reflective layer on a semiconductor substrate using the composition and simultaneously exposing the anti-reflective layer and a photoresist layer, thereby chemically transforming the anti-reflective layer so it is able to be developed. The anti-reflective layer and the photoresist layer are simultaneously developed.

Compositions for anti-reflective light absorbing layer and method for forming patterns in semiconductor device using the same

A semiconductor device fabrication system for carrying out a UV-bake on a photoresist pattern in the semiconductor device pattern formation, includes a photoresist coating unit coating a wafer with a specific photoresist; a developing unit forming a photoresist pattern on the wafer coated with the photoresist; and a cross-linking and flow baking unit for cross-linking the photoresist pattern and subsequently flow baking the cross-linked photoresist pattern, wherein the cross-linking and flow baking unit thermally stabilizes the photoresist pattern prior to flow baking.

Semiconductor device fabrication system

There are provided a semiconductor device fabrication system for carrying out a UV-bake on a photoresist pattern in the semiconductor device pattern formation, a method of forming a semiconductor device pattern using the same, and a photoresist formed thereby. The semiconductor device fabrication system includes a photoresist coating unit coating a wafer with a specific photoresist; a developing unit forming a photoresist pattern on the wafer coated with the photoresist; and a cross-linking unit cross-linking the photoresist pattern to provide a stabilized flow during the flow process for the photoresist pattern. The method of forming a semiconductor device pattern includes: coating a wafer with a photoresist; aligning a photo mask on the photoresist, and carrying out an exposure; forming a photoresist pattern on the wafer; carrying out a cross-linking of the photoresist pattern; and carrying out a flow bake for the photoresist pattern after the cross-linking.

Method of forming semiconductor device pattern including cross-linking and flow baking a positive photoresist

Methods of treating surfaces of wafers to be used in forming integrated circuit devices comprise applying dihydropyrane to the surfaces of the wafers wherein hydrophobicity is imparted to the surfaces. The applying steps are carried out prior to applying photoresists to the wafers.

Methods for priming wafers employed in integrated circuit devices using

A development monitoring apparatus in which a non-exposed wafer is easily reworked by monitoring a developed portion and an undeveloped portion of a photoresist film on a wafer. The apparatus includes a light source for outputting incident light to a wafer having a photoresist film coated with a developer, and a light collector for collecting reflected light reflecting from the wafer. A filter transmits only the reflected light having a desired wavelength. A photoelectric device transforms the reflected light which passes through the filter into an electrical signal. Correct development of the photoresist film is determined by measuring the intensity change of the electrical signal over time. Accordingly, an exposed wafer and an non-exposed wafer are rapidly reworked, so that an increase in manufacturing costs and deterioration of yield rate can be prevented.

Development monitoring apparatus and method adopting the same

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Kyungki-do, South Korea

Hoe-sik Chung