Samsung Electronics Co., Ltd.

Ho-Young Kang

Woo-Sung Han

Cheol-hong Kim

Chang-jin Sohn

Seong-oon Choi

Hak Soo Kim

Jin-seog Hong

Jung-Hyeon Lee

Reduction in focusing error of an exposure process includes forming a conductive layer over a wafer whose topology is to be measured by a capacitance gauge. The conductive layer is thick enough such that differences in capacitance measured by the capacitance gauge tracking apparatus are not due to differences in underlying material and structure on the wafer. Thus, accurate measurement of the real topology of wafer by capacitance gauge tracking apparatus may be realized. As a result, the subsequent exposure processing is reliable.

Capacitance compensation for topological measurements in a semiconductor device

A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of .-+.first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.

Projection exposure systems

A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of -/+ first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.

Projection method and projection system and mask therefor

A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of .-+. first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.

A projection exposure system includes a light transmitting member located between a light source and fly's eye lens to receive most of the incident light and to transmit the incident light to the periphery of the fly's eye lens. Light transmission of the system may be carried out by a light pipe and conic reflection mirror concentrically placed therein, or by an optical fiber flux having a light entrance pupil consisting of a bundle of individual units and a ramified light exit pupil. The system has high light-utilizing efficiency and reduced exposure time because most of the incident light is used.

Projection exposure system

An illumination system for a projection exposing apparatus having an improved fly's eyes lens is disclosed in which an individual lens of a fly's eyes lens includes a pattern portion having a plurality of annuluses with the same center but different diameters, and an etch portion disposed alternately with the pattern portion. The etch portion is formed to have a phase difference of 180 degrees with respect to the pattern portion.

Illumination system for projection exposing apparatus

A projection exposure system includes a light source, a parallel-light forming lens and a fly's eyes lens which are sequentially disposed along a light traveling path. Between the parallel-light forming lens and fly's eyes lens is provided a light dispersing device which is composed of a first light dispersing lens with a concave lens or a second light dispersing lens with multiple small convex lenses. The light dispersing device diverges central light incident on the fly's eyes lens, to thereby increase peripheral light intensity. Accordingly, in tilted illumination, which uses peripheral light, light utilizing efficiency is raised.

Growing community of inventors

Suwon, South Korea

Ho-Young Kang