Siliconware Precision Industries Co., Ltd.

Ho-Chuan Lin

Chia-Chu Lai

Min-Han Chuang

Bo-Shiang Fang

Li-Fang Lin

Yen-Yu Chen

Hsin-Hung Lee

Ming-Fan Tsai

Chih-Yuan Shih

Hsiu-Fang Chien

Tsung-Li Lin

Sung-Chun Wu

An electronic package is provided, in which an electronic component with a conductive layer on an outer surface thereof is embedded in an encapsulant, where at least one electrode pad is disposed on an active surface of the electronic component, and at least one wire electrically connected to the electrode pad is arranged inside the electronic component, so that the conductive layer is electrically connected to the wire, such that the electrode pad, the wire and the conductive layer are used as a power transmission structure which serves as a current path to reduce DC resistance and improve an impedance issue associated with the supply of power.

Electronic package comprising conductive layer connected electrode pad through electronic component

An electronic package is provided, in which a mesh structure is disposed between a circuit structure and an electronic element to increase the shunt path of current. Therefore, when the electronic element is used as an electrode pad of a power contact, the current can be passed through a conductive sheet of the circuit structure via the mesh structure, such that the power loss can be reduced and the IR drop of the electronic element can meet the requirements.

Electronic package and manufacturing method thereof

An electronic module is provided, in which a first metal layer, an insulating layer and a second metal layer are sequentially formed on side faces and a non-active face of an electronic component to serve as a capacitor structure, where the capacitor structure is exposed from an active face of the electronic component so that by directly forming the capacitor structure on the electronic component, a distance between the capacitor structure and the electronic component is minimized, such that the effect of suppressing impedance can be optimized.

Electronic module, manufacturing method thereof and electronic package having the same

Electronic package comprising wire inside an electronic component

Electronic package comprising multiple wires inside an electronic component

An electronic package is provided, in which a ground layer is arranged on one side of an insulator, and a first antenna portion and a second antenna portion embedded in the insulator are vertically disposed on the ground layer, where a gap is formed between the first antenna portion and the second antenna portion, such that the first antenna portion and the second antenna portion are electrically matched with each other, and the ground layer is electrically connected to the second antenna portion but free from being electrically connected to the first antenna portion.

Electronic package and antenna structure thereof

Manufacturing method of electronic package comprising a wire within an electronic component

Electronic package comprising wire inside an electronic component and manufacturing method thereof

An electronic package is provided and has a packaging substrate including a ground pad and a power pad. The power pad surrounds at least three directions of the ground pad so as to increase the footprint of the power pad on the packaging substrate, thereby avoiding cracking of an electronic element disposed on the packaging substrate and effectively reducing the voltage drop.

Electronic device, electronic package and packaging substrate thereof

A semiconductor substrate is disclosed. The semiconductor substrate includes a substrate body having at least an opening formed on a surface thereof, wherein the surface of the substrate body and a wall of the opening are made of an insulating material; and a circuit layer formed on the surface of the substrate body, wherein the circuit layer covers an end of the opening and is electrically insulated from the opening. The opening facilitates to increase the thickness of the insulating structure between the circuit layer and the substrate body of a silicon material to prevent signal degradation when high frequency signals are applied to the circuit layer.

Semiconductor substrate and fabrication method thereof

A duplexer is provided, which includes a first, a second and a third signal ports; a first filter and a second filter. The first filter has first, second, and third resonant circuits that have first, second and third inductors, respectively. The first, second and third inductors are mutually inductive. The first and third resonant circuits are electrically connected to the first and second signal ports, respectively. The second filter has fourth, fifth and sixth resonant circuits that have fourth, fifth and sixth inductors, respectively. The fourth resonant circuit is connected in series with the first resonant circuit. The fifth inductor and the fourth inductor are mutually inductive. The sixth resonant circuit is electrically connected to the third signal port. The second filter further has a main capacitor connected in series with the fifth and sixth resonant circuits respectively and located therebetween.

Duplexer, circuit structure thereof and RF transceiver apparatus comprising the duplexer

A multi bandwidth balun is provided, including a main signal port, a main inductor electrically connected to the main signal port, a first inductor inducted mutually with the main inductor to constitute a first inductor of a first conversion circuit, a first capacitor module connected in parallel to the first conversion circuit, two first signal ports electrically connected to the first capacitor module, a first main capacitor electrically connected to the first signal port and the first capacitor module therebetween, a second inductor inducted mutually with the main inductor to constitute a second inductor of a second conversion circuit, a second capacitor module connected in parallel to the second conversion circuit, two second signal ports electrically connected to the second capacitor module, and a second main capacitor electrically connected to the second signal port and the second capacitor module therebetween.

Multi bandwidth balun and circuit structure thereof

A cross-coupled bandpass filter includes first, second, third and fourth resonators such that magnetic couplings are generated between the first and second resonators, between the third and fourth resonators and between the first and fourth resonators, a capacitive coupling is generated between the second and third resonators, and the magnetic coupling between the first and fourth resonators has a polarity opposite to that of the capacitive coupling between the second and third resonators, thereby generating two transmission zeros in a transmission rejection band.

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Taichung, Taiwan

Ho-Chuan Lin