Alps Electric Co., Ltd.

Frontec Incorporated

Other

Lg Display Co., Ltd.

Lg Philips Lcd Co., Inc.

Hitoshi Seki

Yasuhiko Kasama

Chisato Iwasaki

Hirofumi Fukui

Tadahiro Ohmi

Jo Gyoo Chul

Satoshi Miyazawa

Mitsuru Kano

Makoto Sasaki

Hirohisa Kikuyama

Kenichi Mitsumori

Jun Nakanowatari

Matagoro Maeno

Masayuki Miyashita

Yoshinori Kato

Yorihiko Sasaki

Akira Abe

Tatsuhiro Yabune

Masahiko Yamaguchi

Masami Ikarashi

Masanori Miyazaki

Kazuya Okabe

Tsutomu Nakamura

Tomoo Kamigaki

Yasuhiro Miki

Takemi Akimoto

Jun Takano

Kazuko Ogino

Akane Sekiya

Kazuya Oakabe

The present invention provides an etching agent that is able to etch a Cu film by a simple chemical etching method such as an immersion method when the low resistance Cu film is used for a wiring material, while allowing time-dependent changes of the etching rate to be small and preventing a pattern narrowing phenomenon ascribed to irregular amount of side etching of the Cu film from occurring, by providing an etching agent comprising an aqueous solution containing potassium hydrogen peroxosulfate and hydrofluoric acid, wherein masks of a give pattern is formed on the surface of a laminated film prepared by sequentially depositing a Ti or Ti alloy film and a Cu film on a substrate, and wherein a gate electrode (a laminated wiring) and a lower pad layer (a laminated wiring) with give patterns are formed by etching the laminated film using the etching agent having the foregoing construction.

Etching reagent, and method for manufacturing electronic device substrate and electronic device

An etching agent and an electronic device manufacturing method using the etching agent. The etching agent contains, in a solution, hydrofluoric acid at a concentration of 0.05 to 0.5 mol/l, and halooxoacid ions, represented by the formula (XO.sub.n).sup.p- (wherein X is a halogen element, n is 3, 4 or 6, p is 1, 2 or 3), at a concentration of at least 0.01 mol/l. An electronic device manufactured using the etching agent requires only a single etching step to etch both conductive layers (such as aluminum) as well as ohmic contact layers (a-Si).

Etching agent, electronic device and method of manufacturing the device

The present invention provides a method of removing a photoresist film, which exhibits the high ability to remove photoresist and excellent safety and handling properties such as workability, In the removing method, the photoresist film is removed by chemical decomposition in an inorganic aqueous solution under ultraviolet-light irradiation. The inorganic aqueous solution is an aqueous solution of peroxomonosulfate or an aqueous solution containing 4.5 to 36 wt % of sulfuric acid and 0.05 to 0.8 wt % of hydrogen peroxide.

Method of removing photoresist film

A method of fabricating a thin film transistor of an inverted stagger structure having a gate terminal, a gate insulator a semiconductor film, a source electrode and a drain electrode formed in that order; a gate terminal and a gate wiring are provided for supplying a scanning signal to the gate electrode; and a source terminal and a source wiring are provided for supplying a data signal to the source electrode, wherein the gate terminal is formed on an upper side of the gate insulating film and electrically connected to the gate wiring through a contact hole formed in the gate insulator.

Method of fabricating a thin film transistor wherein the gate terminal

An etchant which generates neither heat nor gas during the process, does not sublimate, is stable for a long period of time, requires no special pipings, and further requires no special treatment of waste water because of containing no organic solvents. The etchant is a solution containing hydrofluoric acid and an-oxoacid or oxoacid salt compound expressed by Mm(XOn)p (where M is hydrogen, one-to three-valence metal or NH.sub.4, m is 1 or 5, X is a halogen element, n is 3, 4 or 6, and p is 1, 2 or 3).

Etchant, detergent and device/apparatus manufacturing method

A electroluminescence device has a light emitting layer composed of a fluorescent powder and a liquid crystal between a transparent substrate formed with a transparent electrode and an insulating substrate formed with an opposed electrode.

Electroluminescent device having a liquid crystal layer adjacent to the

In an optical sensor, there is a risk that a short-circuit occurs in a gap between opposite electrodes on a photoconductive body. A pair of band-shaped electrodes each having a width of 'W' are formed on the photoconductive body under the condition that these electrodes are positioned opposite to each other via the gap having an interval of 'L'. A band-shaped first notch portion having a length of 'W/2' and a width of 'L' is formed which is opened to the gap. Furthermore, a second notch portion is formed which is closed other than the portion thereof communicated to the first notch portion. Thus, first and second bridge portions are formed in one electrode where the first and second notch portions have been formed. When the opposite electrodes are shortcircuited, one of these bridge portions is cut out so that the tip portion of the cut electrode functions as another electrode.

Optical sensor including shortcircuit protection having notched

A thin-film transistor array is constructed of at least a first thin-film transistor and a second thin-film transistor connected in parallel with the first thin-film transistor. These transistors are formed on a substrate under the condition that a source bus and a gate bus are connected to these transistors with forming a crossover portion. These parallel-connected transistors drive one pixel of a liquid crystal element. The first and second thin-film transistors are independently positioned in a symmetrically positional relationship with sandwiching the gate and source buses. In accordance with a laser trimming method of the invention, either gate bus or source bus located at one side of the crossover portion is first cut out so as to electrically disconnect the normally operable thin-film transistor from the array.

Method for trimming thin-film transistor array

Growing community of inventors

Sendai, Japan

Hitoshi Seki