Tokyo Electron Limited

Hitoshi Katoh

Manabu Honma

Tsuneyuki Okabe

Hiroyuki Kikuchi

Takeshi Kumagai

Takashi Chiba

Kohichi Orito

Shingo Maku

Junya Hiraka

Jinsu Lee

Anthony Tokyo Electron US Holdings Inc Dip

A method for using a system, which includes a film formation apparatus for forming a high-dielectric constant thin film on target substrates together and a gas supply apparatus for supplying a process gas. The method includes a preparatory stage of determining a set pressure range of pressure inside a vaporizing chamber for a liquid material cooled at a set temperature. The preparatory stage includes obtaining a first limit value of pressure at which vaporization of the liquid material starts being inhibited due to an increase in the pressure, obtaining a second limit value of pressure at which vaporization of the liquid material starts being unstable and the pressure starts pulsating movement due to a decrease in the pressure, and determining the set pressure range to be defined by an upper limit lower than the first limit value and a lower limit higher than the second limit value.

Semiconductor processing system including vaporizer and method for using same

A method is used for removing a metal contaminant deposited on a quartz member selected from the group consisting of a reaction tube, wafer boat, and heat-insulating cylinder of a vertical heat processing apparatus for a semiconductor process. The method includes obtaining the quartz member unattached to the vertical heat processing apparatus; then, performing diluted hydrofluoric acid cleaning of cleaning the quartz member by use of diluted hydrofluoric acid; then, performing first purified water cleaning of cleaning the quartz member by use of purified water; then, performing hydrochloric acid cleaning of cleaning the quartz member by use of hydrochloric acid; and then, performing second purified water cleaning of cleaning the quartz member by use of purified water.

Removal of metal contaminant deposited on quartz member of vertical heat processing apparatus

A CVD apparatus () forms an insulating film, which is a silicon oxide film, silicon nitride film, or silicon oxynitride film. The CVD apparatus includes a process chamber () to accommodate a target substrate (W), a support member () to support the target substrate in the process chamber, a heater () to heat the target substrate supported by the support member, an exhaust section () to vacuum-exhaust the process chamber, and a supply section () to supply a gas into the process chamber. The supply section includes a first circuit () to supply a first gas of a silane family gas, a second circuit () to supply a second gas, which is an oxidizing gas, nitriding gas, or oxynitriding gas, and a third circuit () to supply a third gas of a carbon hydride gas, and can supply the first, second, and third gases together.

CVD method and device for forming silicon-containing insulation film

Growing community of inventors

Oshu, Japan

Hitoshi Katoh