Tokyo Electron Limited

Canon Kabushiki Kaisha

Matsushita Electric Industrial Co., Ltd.

Combi Co., Ltd.

Canon Finetech Inc.

Combi Corporation

Casio Computer Co., Ltd.

Jsr Corporation

Toshiba Tec Kabushiki Kaisha

Kabushiki Kaisha Toshiba

Tokyo Electron Limi Ted

Oji Paper Co., Ltd.

Toyo Tanso Co., Ltd.

New Oji Paper Co, Ltd.

Tokyo Electron Tohoku Limited

Hitoshi Kato

Naoki Ishikawa

Yasuo Fukatsu

Shigehiro Miura

Hiroyuki Kikuchi

Manabu Honma

Tsuyoshi Moriyama

Tomoharu Sato

Yusuke Obuchi

Tomokazu Nakamura

Takeshi Kumagai

Takeshi Kobayashi

Jun Sato

Naoto Watanabe

Yutaka Takahashi

Norifumi Miyake

Kiyoshi Okamoto

Shinroku Nakao

Takayuki Fujii

Kiyoshi Watanabe

Wataru Kawata

Kazumi Kubo

Yoshiyuki Suzuki

Shunsuke Nishimura

Masahiro Serizawa

Kenichi Hayashi

Youichi Chikugo

Hiroaki Yoshio

Keiko Fujita

Hiroshi Shiho

Katsuyuki Hishiya

Taishi Tomii

Masato Yonezawa

Chishio Koshimizu

Takahiro Watanabe

Keita Takahashi

Jun Yamawaku

Ken Nakao

Tsuneyuki Okabe

Yasuo Matsuki

Ichiro Sasaki

Takuya Kawamura

Shigenori Ozaki

Hisaya Ishio

Kohei Fukushima

Yasushi Takeuchi

Atsuteru Oikawa

Kentaro Oshimo

Masayoshi Kubo

Akino Inoue

Yuichi Yamamoto

Kenji Morita

Yohei Yamazawa

Tsuyoshi Kato

Takehiko Takahashi

Katsuyuki Yamazaki

Toru Ishii

Anthony Dip

Atsushi Endo

Jun Ishii

Katsutoshi Ishii

Mitsuhiro Tachibana

Kensuke Maruya

Hidehiko Kinoshita

Tatsuo Nishita

Hiroshi Suzuki

Yu Wamura

Atsushi Tanaka

Yoshiyasu Ishii

Hideo Saito

Hiroaki Matsuda

Takashi Yokoya

Jun Ogawa

Yuuichi Mikata

Yutaka Ando

Tadashi Inoue

Katsuya Okumura

Yuzo Matsumoto

Manabu Nakamura

Tetsuro Tojo

Masatoshi Yaginuma

Takashi Sugiura

Shinsuke Ubayashi

Yasuo Fukazu

Haruki Mori

Shinji Miyazaki

Reiji Niino

Keiichi Tanaka

Junichi Hagihara

Takashi Akutsu

Yoshihiro Hayakawa

Takanobu Asano

Takahiko Moriya

Yasuaki Yokoyama

Toshiharu Nishimura

Jiro Hiraiwa

Haruo Iwasawa

Shuichi Sato

Yoshihiro Kawauchi

A deposition apparatus including: a processing chamber; a rotary table provided in the processing chamber; a first processing region provided at a predetermined position in a circumferential direction of the rotary table; a second processing region provided downstream of the first processing region in the circumferential direction of the rotary table; a third processing region provided downstream of the second processing region in the circumferential direction of the rotary table; a first heater provided above the rotary table in the second processing region; and a plasma generator. The plasma generator includes: a protrusion having a longitudinally elongated shape in a planar view extending along a radius of the rotary table in a portion of an upper surface of the processing chamber, and protruding upward from the upper surface; and a coil wound along a side surface of the protrusion and has a longitudinally elongated shape in a planar view.

Deposition method and deposition apparatus

A method for depositing a silicon oxide film is provided. In the method, a silicon oxide film is deposited on a substrate by Atomic Layer Deposition with plasma while heating the substrate to a first temperature of 600° C. or higher. The silicon oxide film is annealed at a second temperature higher than the first temperature after completing the depositing the silicon oxide film.

Method for depositing film and film deposition system

A plasma processing apparatus includes a process chamber. A turntable is disposed in the process chamber and is configured to receive a substrate along a circumferential direction thereof. A process gas supply nozzle is configured to supply a process gas to the turntable. A plasma antenna is disposed on the process chamber at a position covering at least a part of the process gas supply nozzle. An ion trap plate is disposed over the process gas supply nozzle at a position overlapping at least a part of the plasma antenna in the process chamber.

Plasma processing apparatus

A deposition method includes: forming an adsorption inhibiting region on an adsorption site formed on a substrate, by causing the adsorption site to adsorb adsorption inhibiting radicals by a predetermined amount; causing an area on the adsorption site, on which the adsorption inhibiting region is not formed, to adsorb a raw material gas; and depositing a film of a reaction product on the adsorption site by causing the raw material gas adsorbed on the adsorption site to react with a reactant gas activated by a plasma.

Deposition method

A film deposition apparatus includes a rotary table disposed in a vacuum chamber; multiple stages on each of which a substrate is placeable, the stages being arranged along a circumferential direction of the rotary table; a process area configured to supply a process gas toward an upper surface of the rotary table; a heat treatment area that is disposed apart from the process area in the circumferential direction of the rotary table and configured to heat-treat the substrate at a temperature higher than a temperature used in the process area; and a cooling area that is disposed apart from the heat treatment area in the circumferential direction of the rotary table and configured to cool the substrate.

Film deposition apparatus and film deposition method

A plasma generation apparatus includes a housing fitted in a portion of an upper surface of a process chamber of a deposition apparatus and having a protruding portion having an elongated shape in a plan view and protruding upward from a bottom surface, a coil wound around a side surface of the protruding portion and having an elongated shape in the plan view, and an inclination adjustment mechanism configured to independently move upward and downward both ends in a longitudinal direction of the coil to change an inclination of the coil in the longitudinal direction.

Plasma generation apparatus, deposition apparatus using the same, and deposition method

A method of depositing a silicon film on a recess formed in a surface of a substrate is provided. The substrate is placed on a rotary table in a vacuum vessel, so as to pass through first, second, and third processing regions in the vacuum vessel. An interior of the vacuum vessel is set to a first temperature capable of breaking an Si&#x2014;H bond. In the first processing region, SiHgas having a temperature less than the first temperature is supplied to form an SiHmolecular layer on its surface. In the second processing region, a silicon atomic layer is exposed on the surface of the substrate, by breaking the Si&#x2014;H bond in the SiHmolecular layer. In the third processing region, by anisotropic etching, the silicon atomic layer on an upper portion of an inner wall of the recess is selectively removed.

There is provided a substrate processing apparatus for performing film formation by supplying a processing gas to a substrate, including: a rotary table provided in a processing container; a mounting stand provided to mount the substrate and configured to be revolved by rotating the rotary table; a processing gas supply part configured to supply a processing gas to a region through which the mounting stand passes by the rotation of the rotary table; a rotation shaft rotatably provided in a portion rotating together with the rotary table and configured to support the mounting stand; a driven gear provided on the rotation shaft; a driving gear provided along an entire circumference of a revolution trajectory of the driven gear to face the revolution trajectory of the driven gear and configured to constitute a magnetic gear mechanism with the driven gear; and a rotating mechanism configured to rotate the driving gear.

Substrate processing apparatus

A substrate holding mechanism for holding a substrate placed on a stage which is rotatable with respect to a turntable, includes a substrate holding member, provided at a peripheral portion of the stage, fixed to a rotating shaft disposed below a surface on which the substrate is placed, and contactable to a side surface of the substrate placed on the stage, a biasing member having a first end fixed to the substrate holding member at a position closer to a center of the stage than the rotating shaft, and a second end fixed at a position separated from the substrate holding member toward the center of the stage and below the rotating shaft, and a pressing member configured to press upwardly a portion of the substrate holding member where the first end of the biasing member is fixed.

Substrate holding mechanism and substrate processing apparatus

A film deposition apparatus includes a process chamber, and a turntable disposed in the process chamber and configured to receive a substrate along a circumferential direction. At least one ozone gas supply part configured to supply ozone gas on the turntable is provided. A plate member is disposed to cover the ozone gas supply part. An ozone gas activator is disposed on or above an upper surface of the plate member and configured to activate the ozone gas.

There is provided a rotation detection jig used for an apparatus in which a substrate is processed inside a processing container by rotating a mounting stand for a substrate provided on one surface side of a rotary table while revolving the mounting stand with rotation of the rotary table, and supplying a processing gas to a region through which the mounting stand passes, including: a rotating element configured to rotate about a rotation shaft of the mounting stand; an encoder main body configured to detect a rotation angle of the rotating element and configured to constitute a rotary encoder together with the rotating element; a fixing member configured to fix the encoder main body to a rotating portion including the rotary table; and a signal processing part provided in the rotating portion and configured to process a detection signal detected by the encoder main body.

Rotation detection jig, substrate processing apparatus and method of operating the substrate processing apparatus

A method for depositing a silicon nitride film is provided. A silicon nitride film is deposited in a depression formed in a surface of a substrate from a bottom surface and a lateral surface by ALD toward a center of the depression in a lateral direction so as to narrow a space at the center of the depression. First nitrogen radicals are adsorbed into the depression immediately before a stage of filling the space at the center with the silicon nitride film deposited toward the center of the depression. A silicon-containing gas is adsorbed on the first nitrogen radical in the depression by physical adsorption. Second nitrogen radicals are supplied into the depression so as to release the silicon-containing gas from the first nitrogen radical and to cause the released silicon-containing gas to react with the second nitrogen radical, thereby depositing a silicon nitride film to fill the central space.

Method for depositing a silicon nitride film and film deposition apparatus

A film forming method forms a silicon film on a substrate placed on a turntable which rotates and passes through first and second process regions that are mutually separated along a circumferential direction inside a vacuum chamber that is settable to a first temperature at which Si&#x2014;H bond dissociation can occur. A film forming process includes forming a molecular layer of SiHon the substrate, by supplying a SiHgas that is set to a second temperature higher than the first temperature during a time period in which the substrate passes through the first process region, and forming a molecular layer of SiClon the substrate having the molecular layer of SiHformed thereon while causing the Si&#x2014;H bond dissociation in the molecular layer of SiH, by supplying a gas including silicon and chlorine during a time period in which the substrate passes through the second process region.

Film forming method and film forming apparatus

A cleaning method for dry cleaning a susceptor disposed in a process chamber of a film deposition apparatus is provided. In the method, a protective member is placed on a substrate receiving region provided in the susceptor. A cleaning gas is supplied to the susceptor having the protective member placed on the substrate receiving region, thereby removing a film deposited on a surface of the susceptor by etching.

Cleaning method and film deposition method

A substrate processing method is implemented in a substrate processing apparatus including a processing chamber, a turntable on which a substrate is placed inside the processing chamber, and first and second gas supplies that supply first and second gases, respectively. The substrate processing method deposits a film, generated by a reaction between the first gas and the second gas, on the substrate in a first state where the substrate rotates and the turntable undergoes a clockwise orbital rotation around a rotating shaft so that the substrate passes through a region supplied with the first gas and thereafter passes through a region supplied with the second gas, and deposits the film on the substrate in a second state where the substrate rotates and the turntable undergoes a counterclockwise orbital rotation.

Substrate processing method

Growing community of inventors

Iwate, Japan

Hitoshi Kato