Disco Corporation

Namiki Seimitsu Houseki Kabushiki Kaisha

Hitoshi Hoshino

Karl Heinz Priewasser

Takashi Yamaguchi

Kenji Furuta

Takashi Okamura

Hideo Aida

Hidetoshi Takeda

Natsuko Aota

Dietmar Mayer

Keiji Honjo

Hiroumi Ueno

Koji Yamaguchi

Keiji Nomaru

Yusuke Nagai

Ryugo Oba

Nobuyasu Kitahara

Toshio Tsuchiya

Masashi Aoki

Toshiyuki Tateishi

Yuji Nitta

Tzanimir Arguirov

Yasuyoshi Yubira

Mai Ogasawara

Roland Zimmermann

Noburu Takeda

The invention relates to a method of processing a workpiece having a first surface, a second surface opposite the first surface, and a third surface extending between the first and second surfaces. The method comprises forming modified regions inside the workpiece so as to create openings in the workpiece. The openings extend to at least one of the first surface, the second surface and the third surface. The method further comprises, after forming the modified regions inside the workpiece, introducing a liquid medium into at least some of the openings and, after introducing the liquid medium into the at least some of the openings, applying an external stimulus to the liquid medium so as to increase the volume of the medium. Moreover, the invention relates to a workpiece processing system for performing this method.

Method of processing a workpiece and system for processing a workpiece

The invention relates to methods of processing a wafer, having on one side a device area with a plurality of devices. In particular, the invention relates to a method which comprises providing a protective film, and applying the protective film to the side of the wafer being opposite to the one side, so that at least a central area of a front surface of the protective film is in direct contact with the side of the wafer being opposite to the one side. The method further comprises applying an external stimulus to the protective film during and/or after applying the protective film to the side of the wafer being opposite to the one side, so that the protective film is attached to the side of the wafer being opposite to the one side, and processing the one side of the wafer and/or the side of the wafer being opposite to the one side.

Method of processing a wafer

The invention relates to a method of producing a substrate with a functional layer. The method comprises providing a workpiece having a first surface and a second surface opposite the first surface, and forming a modified layer inside the workpiece, the modified layer comprising a plurality of modified regions. Further, the method comprises, after forming the modified layer inside the workpiece, forming the functional layer on the first surface of the workpiece and, after forming the functional layer on the first surface of the workpiece, dividing the workpiece along the modified layer, thereby obtaining the substrate with the functional layer. Dividing the workpiece along the modified layer comprises applying an external stimulus to the workpiece. Moreover, the invention relates to a substrate producing system for performing this method.

Method of producing a substrate and system for producing a substrate

A method of processing a wafer having on one side a device area with a plurality of devices includes providing a protective film and applying the protective film to the device side of the wafer or to the other side of the wafer, so that at least a central area of a front surface of the protective film is in direct contact with the device side or the other side of the wafer. The protective film is attached to the device side or to other side of the wafer, so that at least a part of a peripheral portion of the protective film is attached to at least a part of a lateral edge of the wafer along the entire circumference of the wafer. The lateral edge of the wafer extends from the device side of the wafer to the other side of the wafer.

The invention relates to a method of processing a substrate. The substrate has on a first surface a device area with a plurality of devices partitioned by a plurality of division lines. A pulsed laser beam is applied to the substrate at least in a plurality of positions along each of the division lines, with a focal point located at a distance from the first surface in the direction from the first surface towards a second, opposite surface, so as to form a plurality of modified regions in the substrate along each of the division lines. The second surface of the substrate is then ground to adjust the substrate thickness. After forming modified regions and/or hole regions in the substrate, a plasma can be applied to the substrate so as to form a plurality of grooves extending along the division lines.

Method of processing a substrate

A method of processing a wafer having a plurality of devices partitioned by division lines, including attaching the wafer to an adhesive tape supported by a first annular frame, dividing the wafer along the division lines into a plurality of dies, and placing the wafer (and the adhesive tape) on a support surface of a support member before or after dividing the wafer, wherein an outer diameter of the support member in the plane of the support surface is smaller than an inner diameter of the first annular frame. The method also includes moving the first annular frame and at least a peripheral part of the support member relative to each other to radially expand the adhesive tape, thereby moving the dies away from each other, and attaching a second annular frame to a portion of the expanded adhesive tape arranged at the peripheral part of the support member.

Method of processing a wafer and wafer processing system

Disclosed herein is a wafer processing method for removing an annular reinforcing portion from a wafer having a device area, the annular reinforcing portion being formed around the device area. The wafer processing method includes the steps of supporting the wafer through an adhesive tape to an annular frame, forming a mark corresponding to a notch at a position radially inside a boundary portion between the annular reinforcing portion and the device area, cutting the boundary portion together with the adhesive tape to thereby separate the annular reinforcing portion from the device area, and moving the annular reinforcing portion supported through the adhesive tape to the annular frame away from a holding table to thereby remove the annular reinforcing portion from the wafer.

Wafer processing method

A wafer has a device area on one side with a plurality of devices partitioned by a plurality of division lines. Either side of the wafer is attached to an adhesive tape supported by a first annular frame. A modified region is formed in the wafer along the division lines by a laser. The wafer is placed on a support member whose outer diameter is smaller than an inner diameter of the first annular frame. After applying the laser beam, the adhesive tape is expanded thereby dividing the wafer along the division lines. A second annular frame is attached to a portion of the expanded adhesive tape. An inner diameter of the second annular frame is smaller than the outer diameter of the support member and smaller than the inner diameter of the first annular frame.

Provided is a composite substrate manufacturing method, including at least: a first raw board deforming step of preparing a first substrate by deforming a first raw board having at least one surface as a minor surface into a state in which the minor surface warps outward; and a joining step of joining, after the first raw board deforming step, a protruding surface of the first substrate and one surface of a second substrate to each other, thereby manufacturing a composite substrate including the first substrate and the second substrate, in which the second substrate is any one substrate selected from a substrate having both surfaces as substantially flat surfaces and a substrate that warps so that a surface thereof to be joined to the first substrate warps outward. Also provided are a semiconductor element manufacturing method, a composite substrate and a semiconductor element manufactured.

Composite substrate manufacturing method, semiconductor element manufacturing method, composite substrate, and semiconductor element

Provided are a method of manufacturing a light-emitting element by which a light-emitting element () is manufactured through the following steps and a light-emitting element manufactured by employing the method. A light-emitting element layer () is formed on one face (T) of a monocrystalline substrate (A) for a light-emitting element. Next, the other face (B) of the monocrystalline substrate (A) for a light-emitting element is polished until a state where a vertical hole (A) penetrates the monocrystalline substrate (A) for a light-emitting element in its thickness direction is established. Next, a conductive material is filled into the vertical hole (B) from the side of the vertical hole (B) closer to an opening (B) in the other face (B) to form a conductive portion () that is continuous from a side closer to the light-emitting element layer () to the opening (B) in the other face (B).

Method for manufacturing light-emitting element, and light-emitting element

In a splitting method for an optical device wafer, the wafer having optical devices formed individually in regions partitioned by a plurality of crossing scheduled splitting lines provided on a front surface and having a reflective film formed on a reverse surface, a focal point of a laser beam is positioned to the inside of the optical device wafer and the laser beam is irradiated along the scheduled splitting lines from the reverse surface side of the wafer to form modification layers in the inside of the wafer. An external force is applied to the wafer to split the wafer along the scheduled splitting lines and form a plurality of optical device chips. The laser beam has a wavelength that produces transmittance through the reflective film equal to or higher than 80%.

Splitting method for optical device wafer

A sapphire wafer dividing method including a modified layer forming step of forming a plurality of modified layers inside a sapphire wafer along a plurality of crossing division lines formed on the front side where a light emitting layer is formed, and a chamfering and dividing step of forming a plurality of cut grooves on the back side of the sapphire wafer along the division lines, thereby dividing the sapphire wafer into individual light emitting devices along the modified layers as a division start point, wherein the corners of the back side of each light emitting device are chamfered by the formation of the cut grooves in the chamfering and dividing step.

Sapphire wafer dividing method

A sapphire wafer dividing method including a cut groove forming step of forming a plurality of cut grooves on the back side of a sapphire wafer along a plurality of crossing division lines formed on the front side where a light emitting layer is formed, a modified layer forming step of forming a plurality of modified layers inside the sapphire wafer along the division lines, and a dividing step of dividing the sapphire wafer into individual light emitting devices along the modified layers as a division start point, thereby chamfering the corners of the back side of each light emitting device owing to the formation of the cut grooves in the cut groove forming step.

A wafer has, on a front face thereof, a device region in which a device is formed in regions partitioned by a plurality of scheduled division lines. An outer peripheral region surrounds the device region. A reflecting film of a predetermined width is formed from the outermost periphery of the wafer on a rear face of the wafer corresponding to the outer peripheral region. The front face side of the wafer is held in a chuck table, and a focal point of a pulsed laser beam of a wavelength having permeability through the wafer is positioned in the inside of the wafer corresponding to the scheduled division lines. The pulsed laser beam is irradiated from the rear face side of the wafer to form modified layers individually serving as a start point of division along the scheduled division lines in the inside of the wafer.

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Munich, Germany

Hitoshi Hoshino