Shin-Etsu Handotai Co., Ltd.

Hisayuki Saito

Izumi Fusegawa

Ryoji Hoshi

Susumu Sonokawa

Yutaka Kitagawara

A method for evaluating crystal defects by which a distribution of the crystal defects present in a silicon wafer is evaluated, includes forming an oxide film having a thickness equal to a crystal defect size to be evaluated on the silicon wafer, measuring GOI characteristics of the silicon wafer, and obtaining the distribution of the crystal defects having the crystal defect size to be evaluated in the silicon wafer from a measurement result of the GOI characteristics on a supposition that the crystal defects whose size is equivalent to the thickness of the oxide film are present in a region where the GOI characteristics are degraded. Consequently, the method for evaluating crystal defects by which a distribution of the crystal defects can be obtained even if a crystal defect size is 10 nm or less.

Method for evaluating crystal defects

A method for evaluating warpage of a wafer, includes measuring the warpage of the wafer that is in a free state without suction and determining, from measured warpage data, a wafer warpage amount A between two points Qand Qand a wafer warpage amount B between two points Rand R, the points Qand Qbeing located on a straight line passing through an arbitrary point P in a wafer plane and a distance 'a' away from the point P, the points Rand Rbeing located on the same straight line and a distance 'b' away from the point P, the distance &#x201c;b&#x201d; differing from the distance &#x201c;a&#x201d;, calculating, from the wafer warpage amount A and the wafer warpage amount B, a difference in wafer warpage amount at the point P, and evaluating the warpage on the basis of the difference in wafer warpage amount.

Method for evaluating warpage of wafer and method for sorting wafer

A method for evaluating a haze of a substrate surface by a particle counter apparatus using scattering light, the method including calibrating a haze value with the use of a standard sample at the time of obtaining the haze value of the substrate surface from scattering light intensity of light which is entered on the substrate surface, and by using a sample having standard particles applied thereto as the standard sample. Consequently, the method for evaluating a haze by which a haze value of the particle counter apparatus can be calibrated with the use of the standard sample for a haze and a measurement accuracy of the haze can be improved.

Method for evaluating haze

Methods for producing a silicon wafer from a defect-free silicon single crystal grown by a Czochralski (CZ) method are provided. The methods comprise: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500&#xb0; C. or higher but 600&#xb0; C. or lower for 4 hours or more but 6 hours or less; and performing a repolishing step of repolishing the silicon wafer after the heat treatment step such that a polishing amount becomes 1.5 &#x3bc;m or more. Therefore, it is an object to provide a method by which a silicon wafer can be produced at a high yield, the silicon wafer in which Light Point Defects (LPDs) are reduced to a minimum, the silicon wafer with a low failure-incidence rate in an inspection step and a shipment stage.

Silicon wafer and method for producing the same

The present invention is a method for evaluating a silicon wafer by measuring, after fabricating a MOS capacitor by forming an insulator film and one or more electrodes sequentially on a silicon wafer, a dielectric breakdown characteristic of the insulator film by applying an electric field from the electrodes thus formed to the insulator film, the method in which the silicon wafer is evaluated at least by setting an area occupied by all the electrodes thus formed to 5% or more of an area of a front surface of the silicon wafer when the one or more electrodes are formed. This provides an evaluation method that can detect a defect by a simple method such as the TDDB method with the same high degree of precision as that of the DSOD method.

Method for evaluating silicon wafer

The present invention provides an evaluation method for a crystal defect in a silicon single crystal wafer based on an infrared laser scattering tomograph method, wherein at least, the silicon single crystal wafer is irradiated with a laser beam, and light that enters the silicon single crystal wafer is scattered by a crystal defect, and the scattered light is detected to evaluate a Direct Surface Oxide Defect (DSOD) and a void defect smaller than the DSOD in the silicon single crystal wafer. As a result, the evaluation method for a crystal defect in a silicon single crystal wafer that can simply and precisely evaluate, e.g., a small DSOD, which can be conventionally evaluated based on a Cu deposition method alone, without requiring a wasteful cost.

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Shirakawa, Japan

Hisayuki Saito