Shin-etsu Handotai Co., Ltd.

Hisashi Oshima

Tadahiro Kato

Keiichi Okabe

Sadayuki Okuni

Shunichi Ikeda

A method for producing a semiconductor wafer that yields a wafer having high flatness and back surface characteristics to address problems concerning the back surface of a wafer produced by the conventional surface grinding/double side polishing method and observed during the production process. The method comprises flattening both sides of the wafer by surface grinding means, eliminating a mechanically damaged layer by an etching treatment, and then subjecting a front surface of the wafer to a single side polishing treatment, wherein a back surface of the wafer has glossiness in a range of 20-80%.

Semiconductor wafer and production method therefor

A surface grinding method is provided by which grinding striations are produced so that the striations can fully be removed by a polish-off amount less than required in a conventional way in mirror polishing following surface grinding using an infeed type surface grinder, in which two circular tables, opposite to each other, which are driven and rotate independently from each other, are arranged so that the peripheral end portion of one table coincides with an axial center of a rotary shaft of the other table all time, the two circular tables being located so as to be shifted sideways from each other; not only is a grinding stone held fixedly on an opposite surface of the one table, but the wafer is fixed on an opposite surface of the other table; the two tables are rotated relatively to each other; and at least one table is pressed on the other while at least one table is relatively moved in a direction, so that a surface of the wafer is ground, wherein the surface of the wafer is ground while controlling a pitch of grinding striations produced across all the surface of the wafer processed by the grinding stone to be 1.6 mm or less.

Processing method for a wafer

The present invention has an object to provide a manufacturing process of a semiconductor wafer in which improvement on accuracy in a chamfering portion is realized. The manufacturing process of a semiconductor wafer comprises: a slicing step of obtaining a wafer in the shaped of a thin disk by slicing a single crystal ingot; a surface-grinding step of flattening a surface of the wafer; a chamfering step of chamfering the peripheral edge portions; and mirror-polishing step of mirror-polishing the surface of the wafer, wherein a simultaneous double-side surface-grinding step of grinding both sides of the wafer simultaneously by a double-side grinding machine is existent prior to the chamfering step in order to remove wafer waviness and a secondary grinding step is performed by grinding a single side or simultaneously both sides of the wafer after the chamfering step is carried out, so that improvement on accuracy in a chamfered portion is realized.

Manufacturing process for semiconductor wafer

The present invention provides a surface grinding method and apparatus for achieving a thin plate work such as a semiconductor wafer with high flatness, high accuracy and certainty and the apparatus comprises: a surface grinder in which a grinding wheel support member,by which a rotary shaft,of a grinding wheel,is supported is held by a pivotal shaft portion,and a grinding wheel shaft inclination control motor,which displaces the grinding wheel support member,by activating the pivotal shaft portion,is provided; a corrective angle storage device,which stores a corrective angle of an inclination angle of a rotary shaft,of the grinding wheel,to a rotary shaft,of a wafer,; and a shaft inclination control apparatus,which sends out a signal to control the grinding wheel shaft inclination control motor,while reading a corrective angle of the corrective angle storage device,, wherein a relative inclination angle of the grinding wheel to the thin plate work, in a more concrete manner an inclination angle of the rotary shaft,of the grinding wheel,, is changed for each of grinding steps of high rate feed, low rate feed and spark-out.

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Nakakubiki-gun, Japan

Hisashi Oshima