Tokyo Electron Limited

Tokyo Electron Limi Ted

Furuya Metal Co., Ltd.

Matsui Universal Joint Manufacturing Company

Hisashi Inoue

Yasushi Takeuchi

Shunichi Matsumoto

Masahiro Kobayashi

Atsushi Endo

Hiroshi Kikuchi

Keishi Shionaga

Masataka Toiya

Yoshikatsu Mizuno

Tatsuya Yamaguchi

Wenling Wang

Shingo Hishiya

Koji Yoshii

Hirofumi Kaneko

Harunari Hasegawa

Yasuaki Kikuchi

Mitsuru Obara

Michihiro Takahashi

Yoshihisa Kumagai

Goro Takahashi

Kensuke Morita

Wataru Nakajima

Norio Baba

Atsushi Endoh

Tamotsu Hatakeyama

Takuya Oikawa

Shoichi Kanda

Masaaki Takada

Hironori Kosuda

Jun Itabashi

A thermocouple structure according to one aspect of the present disclosure includes a first element wire, second element wires formed of a material different from the first element wire, an insulating covering member covering at least one of the first element wire and the second element wires, and a protective tube accommodating the first element wire and the second element wire. Each of the second element wires is bonded to a different position on the first element wire.

Thermocouple structure, heat treatment apparatus, and method of manufacturing thermocouple structure

Provided is an assembling apparatus for a semiconductor manufacturing apparatus. The assembling apparatus includes: a body; lift attached to the body and configured to move a reaction tube having an opening at a lower end portion thereof vertically, thereby allowing a gas supply pipe to be installed inside the reaction tube through the opening while the reaction tube is held by the lift; gas supply source configured to supply a gas into the reaction tube through the gas supply pipe while the reaction tube is held by the lift; and an exhaust mechanism including a pump configured to exhaust an inside of the reaction tube through the opening, thereby performing a leakage test of the reaction tube while the reaction tube is held by the lift.

Assembling apparatus and assembling method for semiconductor manufacturing apparatus

The clamp apparatus of the present disclosure includes a clamp member configured to contact a substrate accommodating container from an upper side and fix the substrate accommodating container to a predetermined position when a cover provided on a front surface of the substrate accommodating container is opened/closed, a driving mechanism configured to drive the clamp member; a casing configured to cover the driving mechanism, a suction port configured to communicate with the casing, an exhaust chamber provided near the casing, and a fan provided inside the exhaust chamber.

Clamp apparatus, substrate carry-in/out apparatus using the same, and substrate processing apparatus

A substrate holder has two holder constituting bodies, each having a plurality of columns arranged on an imaginary circle, and substrate holding sections that hold circumferential portions of respective substrates. The holder constituting bodies hold the substrates so that either their front surfaces or their back surfaces face upward with a substrate having an upward facing front and a substrate having an upward facing rear being alternately arranged in a vertical direction. At least one of the holder constituting bodies moves in the vertical direction to change the positions of the holder constituting bodies relative to each other. A distance between a first pair of vertically adjacent substrates with their respective front surfaces facing each other is set to ensure treatment uniformity, and to be larger than a distance between a second pair of vertically adjacent substrates with their respective back surfaces facing each other.

Heat treatment method and heat treatment apparatus

A heat treatment apparatus has a substrate holder with two holder constituting bodies that each have a plurality of columns and substrate holding sections. One of the holder constituting bodies holds substrates so that their front surfaces face upward, while the other holds the substrates so that their back surfaces face upward. At least one of the holder constituting bodies moves vertically to change the positions of the holder constituting bodies relative to each other. A distance between one of a first pair of vertically-adjacent substrates with respective front surfaces facing each other and the other of the first pair of substrates is set to ensure treatment uniformity and to be larger than a distance between one of a second pair of vertically-adjacent substrates with their respective back surfaces facing each other and the other of the second pair of substrates.

Heat treatment method and heat treatment apparatus wherein the substrate holder is composed of two holder constituting bodies that move relative to each other

A reaction tube for a semiconductor process for performing a heat process on a plurality of target objects stacked at intervals under a vacuum state is integrally made of an electrically insulating and heat-resistant material. The reaction tube includes a cylindrical sidewall that has a load port at a lower end for loading and unloading the target objects to and from the reaction tube, and a circular ceiling wall that closes an upper end of the sidewall and has a flat inner surface extending in a direction perpendicular to an axial direction of the sidewall. The ceiling wall has an annular groove formed in a peripheral region of an outer surface along the sidewall.

Reaction tube and heat processing apparatus for a semiconductor process

An oxidation method for performing direct oxidation includes respectively supplying an oxidizing gas and a deoxidizing gas to the process field, and directly oxidizing a surface target substrates by use of oxygen radicals and hydroxyl group radicals generated by a reaction between the oxidizing gas and the deoxidizing gas. The oxidizing gas is supplied through an oxidizing gas nozzle extending over a vertical length corresponding to the process field and is spouted from a plurality of gas spouting holes formed on the oxidizing gas nozzle and arrayed over the vertical length corresponding to the process field. The deoxidizing gas is supplied through a plurality of deoxidizing gas nozzles having different heights respectively corresponding to a plurality of zones of the process field arrayed vertically and is spouted from gas spouting holes respectively formed on the deoxidizing gas nozzles each at height of a corresponding zone.

Direct oxidation method for semiconductor process

A heat processing apparatus for a semiconductor process includes a reaction tube including a process field configured to store a plurality of target substrates stacked at intervals. A gas supply duct is integrally provided outside the wall of the reaction tube to extend vertically in a range that covers the process field. A plurality of gas delivery holes are formed in the side portion of the wall of the reaction tube, to be vertically arrayed in a range that covers the process field and communicate with the gas supply duct. A gas supply system is connected to a bottom portion of the gas supply duct to supply a process gas to the process field through the gas supply duct and the plurality of gas delivery holes.

Heat processing apparatus for semiconductor process

The invention is a vertical thermal processing apparatus including: a processing container that contains an object to be processed; a main heater provided so as to surround the processing container, the main heater being capable of heating the processing container and having a rapid cooling function; a gas-discharging part formed at an upper portion of the processing container, the gas-discharging part being bent; an auxiliary heater provided so as to heat the gas-discharging part; a moving mechanism for evacuating the auxiliary heater away from the gas-discharging part during a rapid cooling process of the main heater; and a forcibly gas-discharging mechanism for forcibly discharging an atmospheric gas in a vicinity of the gas-discharging part.

Vertical thermal processing apparatus and method of using the same

A heat treatment method includes a substrate holder that holds a plurality of substrates at predetermined vertical intervals and is carried into a heat treating furnace for performing a predetermined heat treatment on the substrates. The substrate holder has two holder constituting bodies each having a plurality of columns and substrate holding sections. One of the holder constituting bodies holds the substrates at a first, vertically adjacent distance so that their front surfaces face each other, while the other of the holder constituting bodies holds the substrates at a second, vertically adjacent distance so that their back surfaces face each other wherein the second distance is smaller than the first distance to ensure uniformity of the heat treatment. At least one of the holder constituting bodies moves in the vertical direction to change the positions of the holder constituting bodies relative to each other.

Heat treatment method wherein the substrate holder is composed of two holder constituting bodies that move relative to each other

A heat processing apparatus includes a reaction vessel, a heating unit in the reaction vessel to heat the processing region, a temperature detector that detects temperature in the processing region, and a control part to control the heating unit by PID control. The control part has a rule table, and a performance unit that obtains temperature profiles and calculates differences between actually measured temperatures and target values. It refers to the rule table change the PID constants. The control part also updates relationships between PID constants and predicted temperature change amounts.

Heat processing apparatus, method of automatically tuning control constants, and storage medium

Process tube for manufacturing semiconductor wafers

A universal joint includes a journal cross having cross arms and yokes and spline shafts. The universal joint according to the invention comprises oil controllers, each in the form of a cylindrical cup made of a porous plastic material arranged in an oil reservoir in an end of the cross arm and communicating with an oil supply aperture of the journal cross. The controllers control the supply of amounts of grease to the journal cross arm ends resulting from centrifugal force, filter foreign substances such as metal particles so as to prevent abrasion of lubricated parts, and prevent grease from falling down under influence of gravity to restrain it as much as possible when the universal joint is stopped, thereby enabling the lubrication to perform smoothly when the universal joint is restarted.

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Fuchu, Japan

Hisashi Inoue