Sanyo Electric Co., Ltd.

Kanto Sanyo Semiconductors Co., Ltd.

Kanto Sanyo Semiconductor Co., Ltd.

Hisao Otsuka

Takashi Noma

Yukihiro Takao

Akira Suzuki

Katsuhiko Kitagawa

Shinzo Ishibe

Yuichi Morita

Yoshinori Seki

Motoaki Wakui

Keiichi Yamaguchi

Hiroshi Kanamori

Masanori Iida

A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.

Semiconductor device with recess portion over pad electrode

The invention provides a CSP type semiconductor device with high reliability. The semiconductor device includes a pad electrode formed on a semiconductor substrate, a first passivation film covering an end portion of the pad electrode and having a first opening on the pad electrode, a plating layer formed on the pad electrode in the first opening, a second passivation film covering an exposed portion of the pad electrode between an end portion of the first passivation film and the plating layer, covering an end portion of the plating layer, and having a second opening on the plating layer, and a conductive terminal formed on the plating layer in the second opening.

Semiconductor device and manufacturing method of the same

The invention prevents a pad electrode for external connection of a semiconductor device from being damaged. An electronic circuit, a first pad electrode connected to the electronic circuit, and a second pad electrode connected to the first pad electrode are formed on a semiconductor substrate. A first protection film is formed, covering the first pad electrode and having an opening on the second pad electrode only. A wiring layer is further formed, being connected to the back surface of the first pad electrode through a via hole penetrating the semiconductor substrate and extending from the via hole onto the back surface of the semiconductor substrate.

Semiconductor device with pad electrode for testing and manufacturing method of the same

Semiconductor device and manufacturing method thereof

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Gunma, Japan

Hisao Otsuka