Nippon Kogaku K.k.

Nikon Corporation

Hisao Izawa

Junji Hazama

Akikazu Tanimoto

Kazuhiro Takaoka

Takashi Endo

Kinya Kato

Yukio Kakizaki

Yutaka Hayashi

Taro Ototake

Taro Otokake

Kenichi Kodama

Yoichi Hamashima

A pattern position measuring method of measuring two-dimensional positions of a hyperfine pattern formed on the surface of a substrate. This method comprises a pattern position measuring step of measuring the positions of the pattern in a first flexural configuration produced in a supported state where the measured substrate is supported in a first plurality of positions of the measured substrate on a stage, a flexural configuration detecting step of detecting the first flexural configuration of the surface of the measured substrate, and a correcting step of correcting the pattern positions in the first flexural configuration that are measured by the pattern position measuring step to pattern positions in a second flexural configuration on the basis of the pattern positions in the first flexural configuration that are measured by the pattern position measuring step, the first flexural configuration detected by the flexural configuration detecting step and the previously stored second flexural configuration of the surface of the measured substrate which is produced when the measured substrate is supported in a second plurality of positions different from the first plurality of positions.

Method of and apparatus for measuring pattern positions

A pattern position measuring method measures two-dimensional positions of a hyperfine pattern formed on the surface of a substrate. This method comprises a pattern position measuring step of measuring the positions of the pattern in a first flexural configuration produced in a supported state where the measured substrate is supported in first a plurality of positions of the measured substrate on a stage, a flexural configuration detecting step of detecting the first flexural configuration of the surface of the measured substrate, and a correcting step of correcting the pattern positions in the first flexural configuration that are measured by the pattern position measuring step to pattern positions in a second flexural configuration on the basis of the pattern positions in the first flexural configuration that are measured by the pattern position measuring step, the first flexural configuration detected by the flexural configuration detecting step and the previously stored second flexural configuration of the surface of the measured substrate which is produced when the measured substrate is supported in a second plurality of positions different from the first plurality of positions.

An apparatus for optically measuring the very small gap between a reference plane and a substrate parallel to the reference plane. A beam of energy converging on the reference plane is reflected by the substrate and a spot of reflected beam is formed on a detecting plane at a different position. An array of detecting elements for detecting the size of the spot on the detecting plane is adjusted in position in such a manner that the center of the spot coincides with the center of any one of the detecting elements, thereby preventing any error of the in-focus detecting position due to the deviation between the center of the spot and the center of the detecting element.

Small gap measuring apparatus

An alignment apparatus for aligning a semiconductor wafer with an optical mask containing a circuit pattern to be exposed onto the wafer in the fabrication of semiconductor devices by a proximity exposure apparatus. The alignment apparatus includes light beam radiating means for radiating a first and second light beams which are imaged at positions separated by a given gap in a direction substantially perpendicular to two flat sheets, first and second detecting means for respectively detecting the imaging condition of the first and second light beams at the flat sheets, means for relatively moving the light beam radiating means and the flat sheets, and means for discriminating the order of generation of signals from the first and second detecting means, whereby the value of each gap between the selected areas of the two flat sheets at a plurality of places is detected with a high degree of accuracy without changing the gap between the flat sheets thereby making it possible to correct the parallelism, inclination, etc., of the flat sheets.

Apparatus for aligning mask and wafer used in semiconductor circuit

A mask feed method and apparatus for deeding and setting with a high degree of positional accuracy a circuit pattern printing mask in a proximity exposure replicate system for printing integrated circuit patterns on a semiconductor wafer. Arranged on the same stage but separated from a wafer chuck is a mask station on which a mask is set a position different from the exposure position and fed to a mask holder at the exposure position for mask feeding purposes. The mask station is provided with its own displacing means for aligning purposes. Thus, the required movements for mask feeding and alignment purposes are effected by a wafer transfer mechanism.

Mask feed method and apparatus for exposure replicate systems

An apparatus for the attitude control of a plate-form body such as mask or wafer comprises a supporting table, a first movable stage placed on the table and a second movable stage placed on the first stage. The second movable stage is provided means for holding the plate-form body on a reference plane containing the origin of the coordinates defined by two orthogonal coordinate axes. Between the supporting table and the first movable stage there is disposed first driving means. The first driving means is disposed for displacing the first movable stage at at least two positions opposed to each other relative to one of the coordinate axes. The displacement is produced in the direction substantially normal to a segment passing through the origin of the coordinates and forming a determined angle with the reference plane. The displacement of the first stage relative to the table in the direction substantially normal to the above direction is inhibited by first limiting means. Similarly second driving means is disposed between the first and second movable stages for producing the displacement of the second stage at at least two positions opposed to each other relative to the other coordinate axis. The displacement produced by second driving means is in the direction substantially normal to a segment passing through the origin of the coordinates and forming a determined angle with the reference plane. Second limiting means is provided to inhibit the displacement of the second movable stage in the direction substantially normal to the above direction of displacement by the second driving means.

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Kawasaki, Japan

Hisao Izawa