Nec Corporation

Nec Lcd Technologies, Ltd.

Hisanobu Shimodouzono

Hiroyuki Uchida

Hiroaki Tanaka

Shigeru Kimura

Takahiko Watanabe

Kazushige Takechi

Tsutomu Hamada

Akitoshi Maeda

Shinichi Nakata

Shusaku Kido

Hirofumi Ihara

Takasuke Hayase

Satoshi Ihida

Satoshi Doi

Shouichi Kuroha

Tae Yoshikawa

Toshihiko Harano

An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and namorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the namorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

Active matrix substrate plate and manufacturing method therefor

An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step , the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step , the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step , the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n amorphous silicon layer of the channel gap is removed by etching. In step , the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

Manufacturing method of active matrix substrate plate and manufacturing method therefor

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Izumi, Japan

Hisanobu Shimodouzono