Nihon Shinku Gijutsu Kabushiki Kaisha

Hisaharu Obinata

Takashi Komatsu

Yasushi Higuchi

Morohisa Tamura

A sputtering apparatus includes a vacuum housing, a substrate holder disposed in the vacuum housing for holding a substrate thereon, and a composite sputtering cathode assembly disposed in the vacuum housing. The composite sputtering cathode assembly has a plurality of targets and a plurality of shields each disposed between adjacent ones of the targets. The targets are disposed in confronting relation to the substrate held on the substrate holder. Those sputtering particles expelled from the targets which are directed obliquely to the substrate hit the shields and do not reach the substrate. Only those sputtering particles which are directed substantially perpendicularly to the substrate are applied to the substrate. The distribution of film thicknesses on the substrate is made uniform when the substrate and the targets rotate relatively to each other.

Composite sputtering cathode assembly and sputtering apparatus with such composite sputtering cathode assembly

A high vacuum sputtering apparatus comprising a vacuum chamber in which a substrate to be processed and a small size sputtering target having an outer diameter less than one and a half times the diameter of the substrate and an area inclined toward the outer periphery thereof on the surface disposed opposite to the substrate are oppositely disposed, and the internal pressure of the vacuum chamber is maintained at less than 1.times.10.sup.-3 Torr for sputtering, thereby obtaining an improved distribution of film thickness and an enhanced coverage symmetry for sputtering.

Small size sputtering target and high vacuum sputtering apparatus using

A thin film forming method for a substrate having one or more recesses using a vacuum deposition wherein the thin film to be formed on the substrate is heated and melted, and the melted material of the thin film is pressurized and forced into each recess so as not to have any void in the thin film.

Vacuum deposition using pressurized reflow process

Sputter etching apparatus which includes a sputter etching electrode for mounting a substrate in a vacuum treatment chamber and another electrode oppositely facing the sputter etching electrode. The other electrode is in an electrically floating condition; that is, it is electrically insulated from contact with the chamber structure and from direct connection with the power source. Plasma generated is confined between the two electrodes. An annular magnetic field can be generated surrounding the space confining the plasma to further concentrate it.

Growing community of inventors

Suyama Susono, Japan

Hisaharu Obinata