Nippon Electric Co., Ltd.

Anelva Corporation

Canon Anelva Corporation

Nec Corporation

Nippon Hoso' Kyokai

Nihon Koshuha Co., Ltd.

Hisaaki Sato

Tsutomu Tsukada

Nobuaki Tsuchiya

Masayoshi Ikeda

Yasumi Sago

Yukito Nakagawa

Shigeru Mizuno

Seiji Samukawa

Toshio Asai

Kibatsu Shinohara

Tomoaki Koide

Ken-ichi Takagi

Takuichi Tsuchiya

Takayoshi Shinozaki

Fujio Hatakenaka

Isamu Tsuchiya

Shigemoto Murata

Yoji Morishita

Yasuo Niimura

Morio Shintani

This application discloses a High-Frequency plasma processing apparatus comprising a process chamber in which a substrate to be processed is placed, a process-gas introduction line for introducing a process gas into the process chamber, a first HF electrode provided in the process chamber, a first HF power source for applying voltage to the first HF electrode, thereby generating plasma of the process gas. The apparatus further comprises a second HF electrode facing the first HF electrode in the process chamber, interposing discharge space, and a series resonator connecting the second HF electrode and the ground. The frequency of the first HF power source is not lower than 30 MHz. The series resonator is resonant as the distributed constant circuit at the frequency of the first HF power source.

High-frequency plasma processing apparatus

This application discloses a High-Frequency plasma processing apparatus comprising a process chamber in which a substrate to be processed is placed, a process-gas introduction line for introducing a process gas into the process chamber, a first HF electrode provided in the process chamber, a first HF power source for applying voltage to the first HF electrode, thereby generating plasma of the process gas. The apparatus further comprises a second HF electrode facing the first HF electrode in the process chamber, interposing discharge space, and a series resonator connecting the second electrode and the ground. The frequency of the first HF power source is not lower than 30 MHz. The series resonator is resonant as the distributed constant circuit at the frequency of the first HF power source.

A plasma processing apparatus includes a cathode,having a large diameter part,and a long thin small diameter part,, and the upper end surface of the large diameter part,faces the plasma forming space,. The substrate,which is to be processed is mounted on the upper end surface of the large diameter part,. The lower end of the small diameter part,is connected via the matching circuit,to the high frequency power source,. The transmission path within the chamber comprises a large diameter coaxial line, a small diameter coaxial line and a radial line which connects them. The large diameter coaxial line includes the large diameter part,, the first side wall,and the insulator,. The radial line includes the lower surface of the large diameter part,, the upper surface of the bottom plate,and the gap,between them. The small diameter coaxial line includes the small diameter part,, the second side wall,and the gap,. Appropriate impedance matching is achieved between the two coaxial lines and the radial line.

Plasma processing apparatus

This invention discloses a plasma processing apparatus for carrying out a process onto a substrate utilizing a plasma generated by supplying RF energy with a plasma generation gas. This apparatus comprises a vacuum chamber having a pumping system, a substrate holder for placing the substrate to be processed in the vacuum chamber, a gas introduction means for introducing the plasma generation gas into a plasma generation space, an energy supply means for supplying the RF energy with the plasma generation gas. The antenna has multiple antenna elements provided symmetrically to the center on the axis of the substrate and an end shorting member shorting each end of the antenna elements so that an RF current path symmetrical to the center is applied. Multiple circuits resonant at a frequency of the RF energy are formed symmetrically of the antenna elements and the end shorting member. Length obtained by adding total length of neighboring two of the antenna elements and length of the RF current path between ends of neighboring two of the antenna elements corresponds to one second of wavelength of the RF energy.

A surface processing apparatus includes a microwave generator which generates low UHF band microwaves of from 300 MHz to 1 GHz, a cavity resonator in which the microwaves generated in the microwave generator resonate in the TM 010 mode, an airtight process chamber which is connected to the cavity resonator, a radiation plate which is arranged in a part of the cavity resonator which is connected with the process chamber, the radiation plate has a plurality of radiation holes which are established symmetrically with respect to a central axis of the cavity resonator, and cover plates made of a dielectric material which close off the radiation holes in an airtight manner.

Surface processing apparatus

In a microwave tube of the type wherein an electron beam emitted by an electron gun is focused and caused to interact with an input high frequency wave at a high frequency circuit unit by magnetic flux generated by a periodic permanent magnet assembly, and the electron beam after the interaction is collected by a collector unit, the portion connected to the output unit of the high frequency circuit unit comprises a column-shaped waveguide member having an end surface comprising a portion of the wall of a cavity at the end of the high frequency circuit unit, the member being bored with a central aperture at the center axis to allow electron beam to pass from the electron gun to the collector unit. A waveguide for guiding the electromagnetic waves from the end surface to the output unit is also provided, and the end surface is shaped like a fan.

Traveling wave tube devices

A multi-cavity klystron device having a plurality of resonance cavities, comprising a plurality of movable elements, each of which is mounted on each of said resonance cavities and which is adapted to change the resonance frequency in each cavity, a plurality of tuning means for giving a reciprocal movement to each movable element against a resilient member provided therefor, a plurality of pulse motors coupled to the tuning means, and a preset means for controlling pulse supply to each pulse motor, wherein a predetermined number of pulses stored in the memory units of the preset means are selectively applied to the pulse motors to rotate each pulse motor in correspondence with the number of pulses, thereby changing each resonance frequency of each cavity.

Multi-cavity klystron device

In a microwave tube of the type wherein an electron beam emitted by an electron gun is focused and caused to interact with an input high frequency wave at a high frequency circuit unit by magnetic flux generated by a permanent magnet type magnetic circuit, and the electron beam after the interaction is collected by a hollow cylindrical collector, a leakage flux generating means is provided near the entrance of the collector for generating leakage flux acting upon the electron beam. The leakage flux is produced by providing a notch for a pole piece adjacent to the collector and connected to the high frequency circuit unit or by reducing the cross-sectional area of the pole piece for magnetically saturating the pole piece itself or by keeping the pole piece in contact only with a portion of one end of the permanent magnet.

Microwave tubes provided with permanent magnet type magnetic circuits

Growing community of inventors

Tokyo, Japan

Hisaaki Sato