Hitachi, Ltd.

Renesas Technology Corp.

Elpida Memory, Inc.

Other

Ps4 Luxco S.a.r.l.

Hiroyuki Tenmei

Yoshihide Yamaguchi

Naoya Kanda

Hiroshi Hozoji

Asao Nishimura

Ichiro Anjo

Shigeharu Tsunoda

Hiroaki Ikeda

Kunihiko Nishi

Yasuhiro Naka

Masakazu Ishino

Noriyuki Oroku

Kosuke Inoue

Madoka Minagawa

Kenji Ujiie

Akira Yajima

Nae Hisano

Shiro Uchiyama

Hideharu Miyake

Yasumori Narizuka

Mitsuko Itou

Toshiya Satoh

Masahiko Ogino

Atsushi Kazama

Takao Terabayashi

Tadanori Segawa

Shigeo Ohashi

Yasuo Osone

Shigeharu Tunoda

A semiconductor device comprises a mounting substrate, a semiconductor element provided above said mounting substrate, a package substrate provided above said mounting substrate with said semiconductor element therebetween and electrically connected to said semiconductor element via a primary connecting bump, a liquid cooling module cooling said semiconductor element by a liquid refrigerant, in which a heat receiving section of the liquid cooling module is disposed between said semiconductor element and said mounting substrate, and a plurality of secondary connecting bumps provided between said package substrate and said mounting substrate.

Semiconductor device having a liquid cooling module

A wafer (or a circuit board), which is used to perform three-dimensional mounting, has protrusionwhich is provided in low melting point metalfor electrically connecting mutually joined wafersand, and which defines an interval between mutually joined wafersandwithout being deformed at the time when low melting point metalis melted. A joining structure of wafersandis manufactured by using wafersand, at least one of which has protrusion. In the manufactured joining structure of wafersand, wafersandare electrically connected to each other by low melting point metal, and protrusion, which defines the interval between wafersandwithout being deformed at the time when low melting point metalis melted, is provided in low melting point metal

Wafer of circuit board and joining structure of wafer or circuit board

A method for manufacturing a semiconductor device includes the steps of forming first and second semiconductor wafers each including an array of chips and elongate electrodes, forming a groove on scribe lines separating the chips from one another; coating a surface of one of the semiconductor wafers with adhesive; bonding together the semiconductor wafers while allowing the groove to receive therein excessive adhesive; and heating the wafers to connect the elongate electrodes of both the semiconductor wafers.

Method for manufacturing a three-dimensional semiconductor device and a wafer used therein

A bonding method (three-dimensional mounting) of semiconductor substrates is provided to sequentially bond a principal surface of a silicon wafer on which coupling bumps are formed, and a principal surface of the other silicon wafer on which pads are formed, by an adhesive applied to at least one of the principal surfaces. However, there is a problem of poor electrical coupling due to displacement of the bumps and the pads when bonded together. The present invention solves such a problem by conducting temporary positioning of the silicon wafers, adjusting the positions of the coupling bumps and pads while confirming the positions by a method such as x-ray capable of passing through the silicon wafers, and bonding the bumps and the pads together while hardening an interlayer adhesive provided between the principal surfaces of the silicon wafers by thermocompression.

Bonding method of semiconductor and laminated structure fabricated thereby

The present invention is a semiconductor device having the semiconductor element obtained by cutting a semiconductor wafer with the electrode pad formed on one side along a scribe line, a semiconductor element protective layer on the semiconductor element which has a opening on the pad, a stress cushioning layer on the layer which has the opening on the pad, a lead wire portion reaching the layer from the electrode pad via the openings, external electrodes on the lead wire portion, and the conductor protective layer on the layers, the layer and the conductor protective layer forming the respective end faces on the end surface of the semiconductor element inside the scribe line and exposing the range from the end face of the end surface to the inside of the scribe line.

Semiconductor device and manufacturing method thereof

A semiconductor device which includes a semiconductor chip, an insulating film formed on the semiconductor chip, a plurality of projected stress relaxation materials formed on the insulating film, projected electrodes covering at least tops of the stress relaxation materials, and wiring lines for electrically connecting the projected electrodes and element electrodes of the semiconductor chip.

Semiconductor device having projected electrodes and structure for mounting the same

A semiconductor apparatus in which flip chip bonding is enabled without any underfill, and which comprises a semiconductor device, an electrically insulating layer formed on the semiconductor device by mask-printing an electrically insulating material containing particles, and an external connection terminal formed on the electrically insulating layer and electrically connected with an electrode of the semiconductor device. The electrically insulating layer is formed with a thickness so as to provide &#x3b1;-ray shielding of the semiconductor device.

Semiconductor device and method for producing the same

A semiconductor module, comprising a wiring substrate on which wiring is formed, a semiconductor device electrically connected to the wiring formed on the wiring substrate, and an external connection terminal arranged on the semiconductor device mounted side of the wiring substrate so as to be a connected portion between the wiring and the outside electrically connected thereto, wherein there is formed an insulating resin layer thicker than the semiconductor device between the wiring substrate and the external connection terminal.

Semiconductor module

The invention relates to a wiring board comprising a board having an electrode and being coated with an insulation layer with a hole for exposing the electrode; a wiring comprising a Cr or Ti layer, which is connected to the electrode and closely contacts with the insulation layer, and of a Cu layer which is closely contacts with the Cr or Ti layer; a protective film which covers the wiring and is provided with another hole for soldering; and a solder for the outer connection which is mounted in the both holes and brought to diffuse into the Cu layer to produce an alloy, and brought to reach the Cr or Ti layer thereby connecting the solder to the Cr or Ti layer.

Wiring board and method for producing same

A semiconductor device having a semiconductor element is obtained by cutting a semiconductor wafer, having an electrode pad formed on one side thereof, along a scribe line. The semiconductor device has a semiconductor element protective layer on the semiconductor element so as to form an opening above the pad, a stress cushioning layer on the layer so as to form an opening on the pad, a lead wire portion reaching the layer from the electrode pad via the openings, external electrodes on the lead wire portion, and a conductor protective layer on the layer. The layer, the layer, and the conductor protective layer form respective end faces on the end surface of the semiconductor element inside the scribe line and expose a surface of the semiconductor element from the end face of the end surface to a point inside of the scribe line, thereby to expose the scribe line.

A semiconductor device is provided which enables a flip chip connection without use of underfill. The semiconductor device includes a semiconductor element having circuit electrodes and a circuit surface coated with a protecting film. A stress relaxation layer is provided by coating a cured thermoplastic resin onto the protecting film of the circuit surface in a manner which leaves the circuit electrodes exposed and curing it and having an inclination in the edge portion thereof. A wiring layer with wirings is connected to each of the circuit electrodes and disposed so as to make an electrical connection from the circuit electrodes, via the edge portion of the stress relaxation layer, and to a desired portion on the surface of the stress relaxation layer. A protecting film is provided thereon, and an external connection terminal is also provided.

Semiconductor device and method for manufacturing the same and semiconductor device-mounted structure

A semiconductor apparatus comprising a semiconductor device, an electrically insulating layer formed on the semiconductor device, and an external connection terminal formed on the electrically insulating layer and electrically connected to an electrode of the semiconductor device, wherein a power/ground line and a signal line in a region of from an edge of the electrically insulating layer to a uniform-thickness flat portion of the electrically insulating layer are different in kind of wiring pattern from each other.

Semiconductor apparatus including insulating layer having a protrusive portion

A multi-chip module has semiconductor devices and a wiring substrate for mounting the semiconductor devices, in which the wiring substrate comprises a glass substrate having holes formed by sand blasting and a wiring layer formed on the surface of the glass substrate and having wiring and an insulation layer.

Multi-chip module including semiconductor devices and a wiring substrate for mounting the semiconductor devices

In the re-wiring formation process of a WLCSP, at least some of the re-wiring lines that connect the bonding pads and bump pads of the semiconductor chips are formed using a photolithographic process that does not use a photomask. In this re-wiring formation process, standard portions are formed by development following photomask exposure, and portions that are to be designed corresponding to customer specifications are subjected to additional development following additional maskless exposure in the final stage.

Growing community of inventors

Yokohama, Japan

Hiroyuki Tenmei