Central Glass Company, Limited

Denka Company Limited

Hiroyuki Oomori

Akifumi Yao

Shoi Suzuki

Masaki Fujiwara

Akiou Kikuchi

Isamu Mori

Tatsuya Nagai

Yosuke Nakamura

Takashi Kashiwaba

Shinichiro Osumi

Tetsuya Ito

Shinya Ikeda

Takahisa Taniguchi

Takako Arai

Tatsunori Kamida

Shunta Furutani

Ryosuke Sawamura

Provided is a method for stably supplying trimethylamine containing monomethylamine and/or dimethylamine as trace impurities at a constant makeup. The present invention relates to a method for supplying a composition including keeping a storage container that encloses a composition therein at a constant temperature of 10° C. or higher to supply a gas of the composition to a predetermined device. The composition contains, in a gaseous phase, trimethylamine, dimethylethylamine, and at least one of dimethylamine or monomethylamine.

Method for supplying composition, composition and dry etching method

A dry etching method including reacting silicon oxide with: gaseous hydrogen fluoride and a gaseous organic amine compound; a hydrogen fluoride salt of a gaseous organic amine compound; or gaseous hydrogen fluoride, a gaseous organic amine compound, and a hydrogen fluoride salt of a gaseous organic amine compound. The organic amine compound is an organic amine mixture containing at least two compounds represented by the following formula (1):R—N═RR  (1)wherein N is a nitrogen atom; Ris a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom; Rand Rare each a hydrogen atom or a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom; provided that the hydrocarbon group, when it has a carbon number of 3 or more, may have a branched chain structure or a ring structure.

Dry etching method, method for producing semiconductor device, and dry etching gas composition

The present disclosure is directed to a dry etching method for a substrate having a silicon compound film, including: plasmatizing a dry etching agent; and etching the silicon compound film with the plasmatized dry etching agent through a mask formed with a predetermined opening pattern on the silicon compound film, wherein the dry etching agent contains the following first to fourth gases; the first gas is at least one compound selected from the group consisting of iodinated fluorocarbon compounds and brominated fluorocarbon compounds; the second gas is an unsaturated fluorocarbon represented by CF; the third gas is an unsaturated hydrofluorocarbon represented by CHF; and the fourth gas is an oxidizing gas.

Dry etching method and method for producing semiconductor device

A dry etching method according to one embodiment of the present disclosure includes plasmatizing a dry etching agent and etching a silicon oxide or a silicon nitride with the plasmatized dry etching agent, wherein the dry etching agent comprises CFI and a C2-C3 fluorine-containing linear nitrile compound, and wherein the concentration of the C2-C3 fluorine-containing linear nitrile compound relative to the CFI is higher than or equal to 1 vol. ppm and lower than or equal to 1 vol %.

Dry etching method, and dry etching agent and storage container therefor

To provide a carbon black for batteries capable of readily obtaining a positive electrode for batteries having excellent adhesiveness, and excellent output characteristics and the cycle characteristics. A carbon black for batteries, the carbon black having a BET specific surface area measured according to JIS K6217-2 C method of 100 m/g or larger, and a surface fluorine concentration X (unit: atom %) and a surface oxygen concentration Y (unit: atom %) measured by X-ray Photoelectron Spectroscopy (XPS) satisfying the following conditions (A) and (B),0.3&#x2264;&#x2264;4.0 and&#x2003;&#x2003;(A)0.1&#x2264;&#x2264;3.0.&#x2003;&#x2003;(B)

Carbon black for batteries, coating liquid for batteries, positive electrode for nonaqueous batteries and nonaqueous battery

The present invention aims to provide a dry etching agent having less load on global environment and capable of anisotropic etching without the use of special equipment and obtaining a good processing shape and to provide a dry etching method using the dry etching agent. The dry etching agent according the present invention contains at least a hydrofluoroalkylene oxide represented by the following chemical formula: CF&#x2014;CHFO (where x=2 or 3; y=1, 2, 3, 4 or 5; and z=2x&#x2212;1&#x2212;y) and having an oxygen-containing three-membered ring. The dry etching method according to the present invention includes selectively etching of at least one kind of silicon-based material selected from the group consisting of silicon dioxide, silicon nitride, polycrystalline silicon, amorphous silicon and silicon carbide with the use of a plasma gas generated by plasmatization of the dry etching agent.

Dry etching agent, dry etching method and method for producing semiconductor device

A dry etching method according to the present disclosure is for forming a through hole in a laminated film of silicon oxide layers and silicon nitride layers on a substrate in a direction vertical to the laminated film by plasmatizing a dry etching agent to generate a plasma and etching the laminated film by the plasma through a mask having a predetermined opening pattern under a negative direct-current self-bias voltage whose absolute value is 500 V or greater, wherein the dry etching agent contains at least CF, a hydrogen-containing saturated fluorocarbon represented by CHFand an oxidizing gas, and wherein the volume of the hydrogen-containing saturated fluorocarbon contained in the dry etching agent is in a range of 0.1 to 10 times the volume of CFcontained in the dry etching agent.

Dry etching method

Disclosed is the invention of a dry etching agent composition including: 1,3,3,3-tetrafluoropropene; and a hydrochlorofluorocarbon represented by CHClF(wherein x, y and z are integers of 1 or greater and x+y+z=4), wherein a concentration of the hydrochlorofluorocarbon relative to 1,3,3,3-tetrafluoropropene is 3 volume ppm or greater to less than 10000 volume ppm, and a use of this dry etching agent composition. An object of the present invention is to suppress corrosion of storage container, pipes and an etching chamber by suppressing generation of acidic substances by improving storage stability of HFO-1234without losing excellent etching characteristics of HFO-1234

Dry etching agent composition and dry etching method

Disclosed is a dry etching method for etching a laminated film of silicon oxide layers and silicon nitride layers on a substrate. The dry etching method includes providing a mask on the laminated film, generating a plasma from a dry etching agent and etching the laminated film by the plasma through the mask under a bias voltage of 500 V or higher to form a through hole in the laminated film vertically to the layers, wherein the dry etching agent contains at least CHF, an unsaturated perfluorocarbon represented by CFand an oxidizing gas, and wherein a volume of the unsaturated perfluorocarbon contained in the dry etching agent is 0.1 to 10 times a volume of the CHFcontained in the dry etching agent.

What is disclosed is a dry etching gas containing 1,3,3,3-tetrafluoropropene, wherein 1,3,3,3-tetrafluoropropene has purity of 99.5 mass % or more, and a total of concentration of each mixed metal component of Fe, Ni, Cr, Al, and Mo is 500 mass ppb or less. Furthermore, regarding to the dry etching gas, it is preferable that a content of nitrogen is 0.5 volume % or less, and that a content of water is 0.05 mass % or less. In a dry etching with a plasma gas obtained by making a dry etching gas into plasma, the dry etching gas of the present invention can improve etching selectivity of silicon-based material with respect to a mask.

Dry etching gas and dry etching method

A dry etching method provided to involve the steps of: (a) disposing a substrate within a chamber, the substrate having an amorphous carbon film; (b) preparing a plasma gas by converting a dry etching agent into a plasma, the dry etching agent containing at least oxygen and alkylsilane; and (c) conducting plasma etching on the amorphous carbon film by using the plasma gas and an inorganic film as a mask.

Dry etching method and dry etching agent

Disclosed is a dry etching method for a laminated film in which at least one silicon layer and at least one silicon oxide layer are laminated together. The dry etching method includes generating a plasma gas from a dry etching agent and etching the laminated film with the plasma gas under the application of a bias voltage. The dry etching agent contains an unsaturated hydrofluorocarbon represented by the following formula: CHFwhere x is an integer of 1 to 5; y is an integer of 1 to 5; and x and y satisfy a relationship of x+y=4 or 6, and iodine heptafluoride. The volume of the iodine heptafluoride in the dry etching agent is 0.1 to 1.0 times the volume of the unsaturated hydrofluorocarbon in the dry etching agent.

Growing community of inventors

Ube, Japan

Hiroyuki Oomori