Tokyo Electron Limited

Adv Antest Corporation

Isao Corporation

Advaniest Corporation

Hiroyuki Kikuchi

Hitoshi Kato

Shigehiro Miura

Jun Sato

Manabu Honma

Takeshi Kumagai

Katsuyoshi Aikawa

Shigehiro Ushikubo

Takeshi Kobayashi

Shigenori Ozaki

Yoshitaka Takeuchi

Tsuyoshi Yamashita

Yoshinori Arai

Yasushi Takeuchi

Yu Wamura

Haruki Nakajima

Yuji Sawada

Toshiki Maezawa

Takahiro Nishida

Jun Ogawa

Tsuneyuki Okabe

Keiichi Tanaka

Katsuyuki Hishiya

Masato Yonezawa

Mitsunori Aizawa

Tatsuya Tamura

Masahiro Murata

Hiromitsu Horino

Yuichiro Sase

Koichi Orito

Kohichi Orito

Shinji Asari

Toshiyuki Nakatsubo

Hitoshi Katoh

Shingo Maku

Junya Hiraka

Takehiro Fukada

Shuichi Shinhama

Yukio Yamamoto

Takako Sano

Hiroyuki Torii

A plasma processing apparatus includes a vacuum container and a plasma source that generates plasma in the vacuum container. The plasma source includes an antenna, an RF power supply connected to one end of the antenna and configured to supply an RF power to the antenna, and a variable capacitor connected to the other end of the antenna and having a variable capacitance.

Plasma processing apparatus and plasma processing method

A deposition apparatus including: a processing chamber; a rotary table provided in the processing chamber; a first processing region provided at a predetermined position in a circumferential direction of the rotary table; a second processing region provided downstream of the first processing region in the circumferential direction of the rotary table; a third processing region provided downstream of the second processing region in the circumferential direction of the rotary table; a first heater provided above the rotary table in the second processing region; and a plasma generator. The plasma generator includes: a protrusion having a longitudinally elongated shape in a planar view extending along a radius of the rotary table in a portion of an upper surface of the processing chamber, and protruding upward from the upper surface; and a coil wound along a side surface of the protrusion and has a longitudinally elongated shape in a planar view.

Deposition method and deposition apparatus

A plasma processing apparatus includes a process chamber. A turntable is disposed in the process chamber and is configured to receive a substrate along a circumferential direction thereof. A process gas supply nozzle is configured to supply a process gas to the turntable. A plasma antenna is disposed on the process chamber at a position covering at least a part of the process gas supply nozzle. An ion trap plate is disposed over the process gas supply nozzle at a position overlapping at least a part of the plasma antenna in the process chamber.

Plasma processing apparatus

A plasma processing method includes providing a plasma processing apparatus including a rotary table that is rotatably provided in a vacuum container and disposes a plurality of substrates on an upper surface along a circumferential direction, a gas supply source that supplies a plasma processing gas to at least one of a plurality of processing areas separated by a separation area in the circumferential direction of the rotary table, and an antenna that is provided to face the upper surface of the rotary table and generates plasma in the at least one processing area. The plasma processing method further includes disposing the plurality of substrates on the rotary table, and supplying the plasma processing gas into the vacuum container and supplying a pulsed wave of RF power to the antenna while rotating the rotary table.

Plasma processing method, plasma processing apparatus, and control apparatus

An electronic component handling apparatus handles a device under test (DUT). The electronic component handling apparatus includes: transfer units that each include a DUT transfer part that mounts the DUT on a first tray and removes the DUT from the first tray; contact units that each press the DUT mounted on the first tray against a socket disposed on a test head connected to a tester; and a tray transporter that transports the first tray between the contact units and the transfer units. Either or both of (i) at least one of the contact units and (ii) at least one of the transfer units are removably disposed on the electronic component handling apparatus.

Electronic component handling apparatus and electronic component testing apparatus

An electronic component handling apparatus handles a device under test (DUT). The electronic component handling apparatus includes: contact units that adjust a temperature of the DUT independently from one another and press the DUT against a socket independently from one another. The socket is disposed on a test head that is mounted to each of the contact units and that is connected to a tester. At least one of the contact units is removably disposed on the electronic component handling apparatus.

A film forming method includes adsorbing an aminosilane gas on a substrate having a recess in a surface of the substrate, depositing a silicon oxide film on the substrate by supplying an oxidizing gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate, and performing a modifying process of the silicon oxide film by activating a mixed gas including nitrogen gas and hydrogen gas and supplying the activated mixed gas to the silicon oxide film.

Film forming method

A film forming apparatus includes a rotary table having a loading area at a first surface side thereof and revolving a substrate loaded on the loading area, a rotation mechanism rotating the loading area such that the substrate rotates around its axis, a processing gas supply mechanism supplying a processing gas to a processing gas supply area so that a thin film is formed on the substrate which repeatedly passes through the processing gas supply area the revolution of the substrate, and a control part configured to perform a calculation of a rotation speed of the substrate based on a parameter including a rotation speed of the rotary table to allow an orientation of the substrate to be changed whenever the substrate is positioned in the processing gas supply area, and to output a control signal for rotating the substrate at a calculated rotation speed.

Film forming method and recording medium

A film forming apparatus of forming a film by supplying a process gas onto a substrate includes a rotation table having a loading region and is configured to revolve the substrate loaded on the loading region; a process gas supply mechanism configured to supply the process gas to a gas supply region to perform film formation on the substrate repeatedly passing through the gas supply region a plurality of times by revolution of the substrate; a first gear disposed on the other surface side of the rotation table and rotated in a rotation direction of the rotation table; a second gear configured with planetary gears engaging with the first gear, disposed to be revolved together with the loading region, and configured to rotate the loading region so as to allow the substrate to be rotated.

Film forming apparatus

An authentication system includes: a first terminal; a second terminal; and an authentication subsystem, wherein the first terminal transmits first identification information and a first request for push authentication to the authentication subsystem, the authentication subsystem matches the first identification information against second identification information stored in association with a unique ID of the second terminal, and if the second identification information matching the first identification information exists, transmits a push authentication operation start request to the second terminal based on the stored unique ID of the second terminal, and upon receiving the push authentication operation start request, the second terminal prompts a user to perform a predetermined operation other than inputting any of knowledge authentication information, ownership authentication information, and biometric authentication information, and when the predetermined operation is performed by the user, transmits a push authentication operation completion notification to the authentication subsystem.

System, method, and recording medium storing program for authentication

An authentication system includes first and second terminals, and an authentication subsystem. The authentication subsystem: generates a first token based on reception of a code image authentication start request, generates and stores a code image key in association with the first token, generates and stores a code image including the code image key at a URL of the storage unit, transmits the first token and the URL to the first terminal, registers the received first token as a key in an information transmitting and receiving unit, checks whether a received ID of the second terminal is a unique ID, when the received unique ID of the second terminal is the unique ID, checks whether the received code image key is stored in the storage unit, and transmits a first response code to the information transmitting and receiving unit using, as a key.

System, method, program, and recording medium storing program for authentication

Film forming apparatus, film forming method, and recording medium

A film deposition apparatus includes a vacuum chamber into which first and second gases are sequentially supplied for a plural times, a rotation table including a first surface having a receiving area and rotating the receiving area inside the vacuum chamber, a first part supplying the first gas to a first region, a second part supplying the second gas to a second region separated from the first region in a peripheral direction of the rotation table via a separation region, a plasma gas part supplying a plasma generation gas into a plasma region inside the vacuum chamber, an antenna facing the first surface of the rotation table and generating plasma from the plasma generation gas inside a plasma space by inductive coupling, and a faraday shield being grounded and provided between the antenna and the plasma space and including slits aligned in a direction perpendicularly intersecting the antenna.

Film deposition apparatus, film deposition method, and computer-readable recording medium

A method for depositing a silicon-containing film is performed by causing a silicon-containing gas to adsorb on a first surface of a depression formed in a second surface of a substrate by supplying the silicon-containing gas to the substrate. A silicon component contained in the silicon-containing gas adsorbed on the first surface of the depression is partially etched by supplying an etching gas to the substrate. A silicon-containing film is deposited in the depression by supplying a reaction gas reactable with the silicon component to the substrate so as to produce a reaction product by causing the reaction gas to react with the silicon component left in the depression without being etched.

Method and apparatus for gap fill using deposition and etch processes

A substrate processing apparatus includes a vacuum chamber including a top plate, a rotary table rotatably disposed in the vacuum chamber, a first process gas supply part that supplies a first process gas to be adsorbed on a surface of a substrate placed on the rotary table, a plasma processing gas supply part that is disposed apart from the first process gas supply part in a circumferential direction of the rotary table and supplies a second process gas to the surface of the substrate, a separation gas supply part that supplies a separation gas for separating the first process gas and the second process gas, a plasma generator that converts the second process gas into plasma, and an elevating mechanism that moves at least one of the plasma generator and the rotary table upward and downward.

Substrate processing apparatus and substrate processing method

Growing community of inventors

Iwate, Japan

Hiroyuki Kikuchi