Kabushiki Kaisha Toshiba

Hiroyuki Kamijo

Yuuichi Mikata

Toshiro Usami

Masanobu Ogino

Takao Ohta

In the selective anisotropic etching by RIE of a first poly-Si film formed on a gate oxide film the poly-Si film is not entirely removed such that the poly-Si film is partly left unremoved. Then, the entire surface is covered with a second poly-Si film, followed by applying RIE. This particular technique permits preventing the gate oxide film near a poly-Si gate and the interface between the gate oxide film and the substrate from being damaged. Finally, a chemical dry etching, which does not do damage to the gate insulation film near the poly-Si gate, is applied to remove the second poly-Si film and the portion of the first polysilicon film thereunder.

Method of manufacturing semiconductor device

In the selective etching by RIE, a poly-Si film formed on the gate oxide film is not entirely removed such that the poly-Si film is partly left unremoved. Then, the entire surface is covered with a poly-Si film, followed by applying RIE. The particular technique permits preventing the gate oxide film near a poly-Si gate and the interface between the gate oxide film and the substrate from being damaged. Finally, a chemical dry etching, which does not do damage to the gate insulation film near the poly-Si gate, is applied to remove the poly-Si film.

A defect-recognition processing apparatus converts into a defect image pattern, via a television camera, crystal defects present on the surface of an object under inspection, to process an image signal, by means of an image processing device, which corresponds to the defect image pattern, to measure rectangular images in terms of their length and their ratio between L.sub.Y and L.sub.X (L.sub.Y : a length in a longitudinal direction and L.sub.X : a length in the lateral direction of the wafer) and to detect defects developed on the surface of the aforementioned object.

Defect-recognition processing apparatus

A method for manufacturing a semiconductor device is disclosed which selectively forms in a one-conductivity type semiconductor device a deep impurity-diffused area at over 1100.degree. C. in an H.sub.2 gas atmosphere containing N.sub.2, Ar, Ne, He and a combination thereof.

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Yokohama, Japan

Hiroyuki Kamijo