Tokyo Electron Limited

Other

Japan Science and Technology Corporation

Tokyo Electron at Limited and Japan Science and Technology Corporation

Hiroyuki Ishihara

Akira Koshiishi

Jun Hirose

Masahiro Ogasawara

Michishige Saito

Taichi Hirano

Jun Ooyabu

Tetsuo Yoshida

Hiromitsu Sasaki

Kohji Numata

Chishio Koshimizu

Koji Maruyama

Kimihiro Higuchi

Akinori Kitamura

Takuya Kubo

Toshiki Takahashi

Youichi Araki

Kiichi Hama

Atsushi Ito

Yoko Ono

A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

Plasma processing method and apparatus

A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.

Plasma processing apparatus and method

A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. A first upper electrode is disposed to have a ring shape and to face a target substrate placed within the process container. A second upper electrode is disposed radially inside the first upper electrode and electrically insulated therefrom. A first electric feeder is configured to supply a first RF output from a first RF power supply to the first upper electrode at a first power value. A second electric feeder branches from the first electric feeder and is configured to supply the first RF output from the first RF power supply to the second upper electrode at a second power value smaller than the first power value.

Plasma processing apparatus and method, and electrode plate for plasma processing apparatus

An electrostatic chuckis provided on a lower electrodeprovided inside a processing chamberof an etching apparatusand a conductive inner ring bodyand an insulating outer ring bodyare encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodiesandare detected by first&#x2dc;third temperature sensorsandA controllercontrols the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuckvia first gas outlet ductsand to the space between the outer edges of the wafer W and the electrostatic chuckvia second gas outlet ductsand the quantity of heat generated by a heaterinside the outer ring bodybased upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring bodyare set roughly equal to each other.

Plasma processing apparatus and plasma processing method

An SiOfilm layer formed at a wafer placed inside a process chamber of an etching device is etched by generating plasma from a process gas containing fluorocarbon which has been introduced into the process chamber. The contents of an etchant and the byproducts are measured through infrared laser absorption analysis. The individual contents thus measured are compared with the contents of the etchant and the byproducts in the plasma corresponding to the increase in the aspect ratio of a contact hole set in advance. The quantity of Oadded into the process gas is adjusted to match the measured contents with the predetermined contents. The quantity of Oadded into the process gas is continuously increased as the aspect ratio becomes higher. As a result, a contact hole is formed at the SiOfilm layer without damaging the photoresist film layer or inducing an etch stop.

Method of plasma processing

A plasma processing device is able to positively enhance a process-gas exhaust efficiency in a processing region and restrict plasma leaking. A processing container of a magnetron type parallel plate plasma processing device has a separator for separating the inside of the processing container into a processing region and an exhaust region. The separator has a plurality of gas passage holes to establish communication between the processing region and the exhaust region, and consists of a non-conductive member. A conductive member is disposed on a gas passage-side surface facing the gas passage holes. A voltage V is applied by a power supply to the conductive member so that the gas passage-side surface is at a potential higher than that of a processing-region surface.

Plasma processing device and baffle plate thereof

An electrostatic chuck is provided on a lower electrode provided inside a processing chamber of an etching apparatus , and a conductive inner ring body and an insulating outer ring body are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies and are detected by first&tilde;third temperature sensors and . A controller controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck via first gas outlet ducts and to the space between the outer edges of the wafer W and the electrostatic chuck via second gas outlet ducts and the quantity of heat generated by a heater inside the outer ring body based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body are set roughly equal to each other.

Method and apparatus for plasma processing

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Yamanashi, Japan

Hiroyuki Ishihara