Hitachi-High-Technologies Corporation

Canon Kabushiki Kaisha

Hitachi, Ltd.

Hitachi High-Tech Corporation

Other

Adv Antest Corporation

Hiroya Ohta

Yasunari Sohda

Yoshinori Nakayama

Masato Muraki

Momoyo Enyama

Osamu Kamimura

Haruo Yoda

Makoto Sakakibara

Norio Saitou

Kenji Tanimoto

Yusuke Abe

Yoshikiyo Yui

Sayaka Tanimoto

Hiroshi Makino

Takuma Yamamoto

Natsuki Tsuno

Daisuke Bizen

Ryuichi Funatsu

Susumu Gotoh

Tomohiro Tamori

Masahiko Okunuki

Shinichi Hashimoto

Yoshinobu Kimura

Yasuhiro Someda

Yuki Mori

Masaki Hasegawa

Toshiyuki Ohno

Masaaki Nojiri

Takashi Matsuzaka

Kaori Bizen

Masaki Hosoda

Masaki Takakuwa

Yasunari Souda

Renichi Yamada

Junichi Tanaka

Muneyuki Fukuda

Hajime Kawano

Mari Nozoe

Hideyuki Kazumi

Masahiko Ogino

Yasutaka Toyoda

Akihiro Miyauchi

Takashi Ando

Norio Saito

Souichi Katagiri

Masahide Okumura

Zhaohui Cheng

Taku Ninomiya

Hirotaka Hamamura

Hideo Morishita

Susumu Komoriya

Michio Hatano

Hidetoshi Satoh

Takeshi Haraguchi

Yasuhiro Shirasaki

Hideto Dohi

Chiseki Haginoya

Minami Shouji

Katsuhiro Kawasaki

Shin-ichi Hashimoto

Hiroyuki Okino

Toshimasa Kameda

Kazufumi Yachi

Shin'ichi Hashimoto

Noriyuki Tanaka

Hiroki Otaki

Toshihiko Kohno

Proposed is a charged particle beam apparatus for the purpose of detecting a charged particle emitted from a sample in a specific direction by discriminating between the charged particle and a charged particle emitted in another direction. As one aspect of achieving the above purpose, proposed is a charged particle beam apparatus including an objective lens configured to focus a beam emitted from a charged particle source, a detector () configured to detect at least one of a first charged particle () emitted from a sample by irradiating the sample with the beam and a second charged particle emitted from a charged particle collided member by causing the first charged particle to collide with the charged particle collision member disposed on a trajectory of the first charged particle, and an electrostatic lens () including a plurality of electrodes disposed between the objective lens and the detector, in which the electrostatic lens is a Butler type.

Charged particle beam apparatus

A training method that performs learning using appropriate low-quality image and high-quality image is provided. The invention is directed to a training method including executing learning by inputting a first image generated under a first image generation condition and a second image generated under a second image generation condition different from the first image generation condition to a learning apparatus that adjusts parameters so as to suppress an error between an input image and a converted image, in which the second image is selected such that an index value extracted from the second image is the same as or has a predetermined relationship with an index value extracted from the first image, or the second image is output from a second image generation tool different from a first image generation tool for generating the first image.

Training method for learning apparatus, and image generation system

The invention provides a charged particle beam device capable of reducing a positional shift between secondary beams generated in a beam separator. The charged particle beam device includes a charged particle beam source configured to irradiate a sample with a plurality of primary beams, a plurality of detectors configured to detect secondary beams emitted from the sample in correspondence to the primary beams, and a beam separator configured to deflect the secondary beams in a direction different from that of the primary beams. The charged particle beam device further includes a deflector provided between the beam separator and the detector to correct a positional shift between the secondary beams generated in the beam separator.

Charged particle beam device

A computation device is provided for measuring the dimensions of patterns formed on a sample based on a signal obtained from a charged particle beam device. The computation device includes a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights based on an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.

Pattern measurement device and pattern measurement method

An object of the invention is to provide a charged particle beam device capable of increasing the contrast of an observation image of a sample as much as possible in accordance with light absorption characteristics that change for each optical parameter. The charged particle beam device according to the invention changes an optical parameter such as a polarization plane of light emitted to the sample, and generates the observation image having a contrast corresponding to the changed optical parameter. An optical parameter that maximizes a light absorption coefficient of the sample is specified according to a feature amount of a shape pattern of the sample (refer to FIG.).

To implement a calibration sample by which an incident angle can be measured with high accuracy, an electron beam adjustment method, and an electron beam apparatus using the calibration sample. To adjust an electron beam using a calibration sample, the calibration sample includes a silicon single crystal substratewhose upper surface is a {110} plane, a first recess structureopening in the upper surface and extending in a first direction, and a second recess structureopening in the upper surface and extending in a second direction intersecting the first direction, in which the first recess structure and the second recess structure each include a first side surface and a first bottom surface that intersects the first side surface, and a second side surface and a second bottom surface that intersects the second side surface, the first side surface and the second side surface are {111} planes, and the first bottom surface and the second bottom surface are crystal planes different from the {110} planes.

Calibration sample, electron beam adjustment method and electron beam apparatus using same

The present invention has a computation device for measuring the dimensions of patterns formed on a sample on the basis of a signal obtained from a charged particle beam device. The computation device has a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights on the basis of an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.

The purpose of the present invention is to provide a pattern measurement device that is capable of highly accurately measuring a groove bottom, hole bottom, or the like, regardless of the accuracy of the formation of a deep groove or deep hole. To that end, the present invention proposes a pattern measurement device provided with a computation device for measuring the dimensions of a pattern formed on a sample on the basis of a signal obtained by a charged particle beam device, wherein the computation device determines the deviation between a first part of the pattern and a second part of the pattern at a different height than the first part and pattern dimension values on the basis of a detection signal obtained on the basis of the scanning of the sample by a charged particle beam and corrects the pattern dimension values using the deviation determined from the detection signal and relationship information indicating the relationship between the pattern dimensions and the deviation.

There is provided a charged particle beam apparatus including: a charged particle source; a condenser lens and an object lens for converging a charged particle beam from the charged particle source and irradiating the converged charged particle beam to a specimen; and plural image shift deflectors for deflecting the charged particle beam. In the charged particle beam apparatus, the deflection of the charged particle beam is controlled using first control parameters that set the optical axis of a charged particle beam to a first optical axis that passes through the center of the object lens and enters a predefined position of the specimen, and second control parameters that transform the first control parameters so that the first control parameters set the optical axis of the charged particle beam to a second optical axis having a predefined incident angle different from the incident angle of the first optical axis.

The purpose of the present invention is to provide a charged particle beam device for detecting, with highly precise angular discrimination, charged particles emitted from a specimen. To achieve this purpose, proposed is a charged particle beam device provided with a scanning deflector for scanning on a specimen a charged particle beam emitted from a charged particle source, the charged particle beam device being provided with: a first detector for detecting charged particles obtained by scanning of the charged particle beam on a specimen, and a second detector placed between the first detector and the specimen, and supported so as to be able to move in the charged particle beam light axis direction.

To provide a scanning electron microscope having an electron spectroscopy system to attain high spatial resolution and a high secondary electron detection rate under the condition that energy of primary electrons is low, the scanning electron microscope includes: an objective lensprimary electron acceleration meansthat accelerates primary electronsprimary electron deceleration meansthat decelerates the primary electrons and irradiates them to a samplea secondary electron deflectorthat deflects secondary electronsfrom the sample to the outside of an optical axis of the primary electrons; a spectroscopethat disperses secondary electrons; and a controller that controls application voltage to the objective lens, the primary electron acceleration means and the primary electron deceleration means so as to converge the secondary electrons to an entrance of the spectroscope.

Scanning electron microscope and electron trajectory adjustment method therefor

An aberration corrector includes a mirror that corrects an aberration of a charged particle beam, a beam separator, and a bypass optical system in the beam separator. The beam separator includes an entrance of the charged particle beam and an exit from which the charged particle beam is emitted to an objective lens, and separates an incident trajectory from the entrance to the mirror and a reflection trajectory from the mirror to the exit from each other by deflecting the charged particle beam in an ON state. The bypass optical system is disposed at a position at which the trajectory of the charged particle beam bypasses when the beam separator is in the ON state, and the trajectory of the charged particle beam passes when the beam separator is in an OFF state, and controls the charged particle beam so that objective lens optical conditions in a trajectory via the mirror and a trajectory passing through the bypass optical system coincide with each other.

Charged particle beam device and aberration corrector

A simulation device calculates a detection number of electrons generated by charged particles radiated to a sample by a simulation and generates a simulation image of the sample. The simulation device holds penetration length information () in which incidence conditions of the charged particles and a penetration length are associated with each other, sample configuration information () which shows a configuration of a sample, and emission electron number information in which the incidence conditions of the charged particles and an emission electron number are associated with each other. The simulation device calculates the number of electrons emitted from a predetermined incidence point, on the basis of incidence conditions at the predetermined incidence point, the penetration length information (), the sample configuration information (), and the emission electron number information.

Charged particle beam device, simulation method, and simulation device

Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode provided between a sample and an objective lens, the device applies a positive or negative voltage to the electrode and obtains images. A secondary electron emission rate is measured and energy EL and EH for the charged particles are found. A first image is obtained using the EH and positive potential conditions. A second image is obtained using the EL and negative potential conditions. A third image is obtained at the same position as the second image, and by using the EL and positive potential conditions.

Semiconductor inspection device including a counter electrode with adjustable potentials used to obtain images for detection of defects, and inspection method using charged particle beam

In a semiconductor inspection method using a semiconductor inspection device, by selecting an incident energy and a negative potential and scanning an inspection surface of a wafer with primary electrons to detect secondary electrons, a first inspection image is acquired, and a macro defect, stacking faults, a basal plane dislocation and a threading dislocation contained in the first inspection image are discriminated by image processing based on a threshold value of a signal amount of the secondary electrons determined in advance. Moreover, by selecting the incident energy and a positive potential and scanning the inspection surface of the wafer with primary electrons to detect the secondary electrons, a second inspection image is acquired, and a threading screw dislocation of a dot-shaped figure contained in the second inspection image is discriminated by image processing based on a threshold value of a signal amount of the secondary electrons determined in advance.

Semiconductor inspection method, semiconductor inspection device and manufacturing method of semiconductor element

Growing community of inventors

Kodaira, Japan

Hiroya Ohta