Other

Renesas Technology Corp.

Asahi Glass Company, Limited

Mitsubishi Electric Engineering Company, Limited

Hirotoshi Ise

Takeru Kinoshita

Takahiro Mitsumori

Toshiki Oono

Yasuhiro Kimura

Minoru Hanazaki

Toshihiro Yamashita

Toshio Komemura

Toshihiko Noguchi

Takayuki Ikushima

Masato Toyota

Nobuhiro Nishizaki

Tatsuo Mizuno

A glass substrate-holding tool employed during the production of a reflective mask blank for EUV lithography includes an electrostatic chuck and a mechanical chuck. A caught and held portion of a glass substrate caught and held by the electrostatic chuck, and pressed portions of the glass substrate pressed by the mechanical chuck are located outside a quality-guaranteed region on each of a film deposition surface and a rear surface of the glass substrate. The sum of a catching and holding force applied to the glass substrate by the electrostatic chuck and a holding force applied to the glass substrate by the mechanical chuck is at least 200 kgf. A pressing force per unit area applied to the glass substrate by the mechanical chuck is at most 25 kgf/mm.

Glass substrate-holding tool and method for producing an EUV mask blank by employing the same

A glass substrate-holding tool, adapted to be employed during the production of a reflective mask blank for EUV lithography (EUVL), includes an electrostatic chuck and a supporting member. The chuck attracts a rear surface of a glass substrate in a non-contact manner by electrostatic attractive force. The supporting member partly supports the rear surface. An area ratio of a projected area of an active surface of the chuck for providing the electrostatic force to an area of a quality-guaranteed region of the rear surface is from 0.5 to 1.0. The active surface is apart from the rear surface by more than 20 &#x3bc;m. The supporting member is configured to support only a region including at least two of four sides defining an outer portion outside the quality-guaranteed region.

A plasma processing system comprises a processing chamber into and from which processing gas is inlet and outlet; a pair of electrodes disposed so as to mutually oppose within the processing chamber; a RF feeding apparatus for generating plasma between the pair of electrodes; a retaining/removal apparatus for retaining a substrate to be processed on and removal from a sample table while one of the pair of electrodes is taken as the sample table; and a detection apparatus for detecting the electrostatic-chucking state of the substrate and for detecting removal state of electrical charges from the substrate, on the basis of variations in impedance arising between the sample table and the substrate.

Plasma processing system in which wafer is retained by electrostatic chuck

A centrifugal dryer of the present invention includes: a chamber for performing drying processing for plural substrates; a cradle, installed inside chamber, and drying plural substrates by rotation driving in a state of being held therein; and an elastic wave sensor for detecting an elastic wave generating upon striking of a chip from plural substrates to said chamber during the processing therefor.

Centrifugal dryer, manufacturing method for semiconductor device and semiconductor manufacturing apparatus

A defect inspecting device for a wafer is built in a positioning device for positioning a wafer , as a substrate to be processed, in a semiconductor manufacturing process. Light is irradiated on the wafer held on a vacuum holding base while rotating the wafer at least one rotation from a position where the wafer is positioned and the scattered light is received. An operation unit and a control unit judge that if the intensity of the scattered light exceeds a predetermined threshold, a defect is detected on the wafer

Defect inspecting device for substrate to be processed and method of manufacturing semiconductor device

Two electrodes are provided in a processing container so as to be opposed to each other. Main etching processing gases of Cl,and BCl,are introduced into the processing container, and a deposition-type gas composed by least two of C, H, and F, such as a CHF,gas or a CF,gas, is added thereto. A plasma is generated by applying a pulse-modulated high-frequency voltage between the two electrodes that hold a sample to be etched. The sample is etched by using the plasma.

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Tokyo, Japan

Hirotoshi Ise