Kabushiki Kaisha Topcon

Topcon Corporation

International Precision Incorporated

Hirotami Koike

Shinichi Okada

Nobuo Kochi

Kouji Kimura

Yasuko Tsuruga

Masahiro Yamamoto

Masahiro Inoue

Akira Higuchi

Sumio Sasaki

Hideaki Kyogoku

Masaru Watanabe

A charged particle beam reflector device is configured to include at least two electrostatic mirrors arranged with a predetermined interval on a linear optical axis, each having a through hole through which a charged particle beam radiated from an electron gun along a linear optical axis passes, and having a function of reflecting the charged particle beam or allowing the charged particle beam to pass through the through hole in accordance with an applied voltage, and a controller controlling an applied voltage to the at least two electrostatic mirrors. The controller applies, to each of the electrostatic mirrors, a reflection voltage allowing the electrostatic mirrors to reflect the charged particle beam at a predetermined timing so that the charged particle beam from the electron gun is reflected by the at least two electrostatic mirrors a plurality of times.

Charged particle beam reflector device and electron microscope

The present invention provides a charged particle beam apparatus capable of preventing the charging-up of the specimen without using a large-scale facility. A scanning electron microscopeilluminates a specimenwith a charged particle beam via a charged particle optical system arranged in a column. According to the present invention, the scanning electron microscopehas a charge preventive memberdisposed between the objective lensand the specimen. The charge preventive memberhas an electrically conductive portion and an openingto transmit the charged particle beam. The charge preventive memberis formed so as to partly cover the charged particle optical system when viewed from the charged particle beam irradiation spot on the specimen. In addition, the charge preventive memberhas gas inflow pathsandformed therein. These gas inflow paths have gas injection outletsformed to inject gas toward the charged particle beam irradiation spot on the specimen.

Charged particle beam apparatus

To provide an electron beam system capable of performing three-dimensional measurement of a sample with high precision irrespective of the tilt angle and height of the sample. The electron beam system has a correction factor storing sectionfor storing a correction factor at a reference tilt angle with respect to a plane which is used to tilt a sample by a sample tilting section, an approximate coordinate measuring sectionfor obtaining an approximate shape or approximate coordinate values of the sample based on an output corresponding to a stereo image from an electron beam detecting section, an image correcting sectionfor correcting the stereo image according to the tilt angle created by the sample tilting sectionbased on the shape or coordinate values of the sample obtained in the approximate coordinate measuring sectionusing a correction factor stored in the correction factor storing section, and a precise coordinate measuring sectionfor obtaining a shape or coordinate values of the sample which are more precise than those obtained in the approximate coordinate measuring sectionbased on a corrected stereo image obtained in the image correcting section

Electron beam system and electron beam measuring and observing methods

A scanning electron microscope in the present invention includes an electron sourceto radiate an electron beam, an objective lens systemto focus the radiated electron beam on a sample, scanning systemsto scan the focused electron beam on the sample, secondary electron detection systemsto detect secondary electrons emitted from the sample, and a secondary electron image displaying systemto display a secondary electron image of the samplewith a secondary electron detection signal from the secondary electron detection system. The objective lensis composed of first and second objective lenses. The first objective lensis mainly excited when using in a wide visual field mode and the second objective lensis mainly excited when using in a high resolution mode.

Scanning electron microscope

An electron beam device according to the present invention is made up of an electron beam source for emitting an electron beam, an electron optical system for irradiating the electron beam onto a specimen, a specimen holder for holding the specimen, a specimen tilting section for producing relative tilt angles between the specimen holder and the electron beam, an electron beam detecting section for detecting electron beam emitted from the specimen, and a data correcting section for correcting the three-dimensional detection data to have specified relationship under the condition of a relative tilt angle between the specimen holder and the electron beam.

Electron beam device and method for stereoscopic measurements

A scanning electron microscope system with an electrostatic magnetic field complex objective lens, comprising at least two or more deflection means for tilting a primary electron beam and for projecting the primary electron beam onto a specimen, wherein one of the deflection means is arranged near the objective lens so as to generate a deflection field and also to serve as a compensation field for compensating abaxial aberration at the same time, and abaxial aberration of the primary electron beam deflected by the deflection means is compensated.

Scanning electron microscope system

A scanning electron microscope comprises: an electron beam source, an electron beam acceleration device for accelerating primary electrons generated by the electron beam source, a deflector for scanning and deflecting the accelerated primary electrons, a magnetic-electrostatic compound objective lens for focusing the scanned and deflected primary electrons onto a specimen mounted on a specimen support, a reflection electron detector for detecting reflection electrons generated from the specimen due to focusing and irradiating the primary electrons onto the specimen a secondary electron detector for detecting secondary electrons generated from the specimen due to focusing and irradiating the primary electrons onto the specimen and an image display device for displaying a specimen image from detection signals from each detector Moreover, there is provided an aperture around an axis for passing an electron beam and secondary electrons around the axis through the reflection electron detector This gives a: scanning electron microscope device which can separate and detect on an electron beam axis, reflection electrons and secondary electrons from a specimen, with a device of a simple construction.

An organic substance analyzer, which comprises a irradiating unit for irradiating a specimen containing organic substances with an electron beam, a spectrum detecting unit for detecting spectrum of fluorescent light emitted from said specimen, a storage unit for storing a shape of a reference spectrum of fluorescent light of each specific type of organic substance when the electron beam is irradiated on said specific type of organic substance, and a searching unit for classification and identifying organic substances in the specimen by comparing the shape of said stored reference spectrum with that of said detected spectrum, whereby the electron beam having higher energy than light is irradiated the specimen for analysis, fluorescent light with spectrum in wider range is emitted from the specimen even in ultraviolet range, and organic substances in the specimen are discriminated and identified by comparing shapes of the measured spectral pattern obtained from the fluorescent light with a reference spectral pattern stored in memory in advance.

Organic substance analyzer

An apparatus for displaying a sample image comprises a scanning illumination system 3 for scanning a sample by an irradiation ray ray being relatively moved, a first detection portion 7 for detecting a first detection signal obtained from a continuous area of the sample by the irradiation ray ray, a second detection portion 9 for detecting a faint second detection signal obtained from a micro-discrete area of the sample by the irradiation ray ray, a signal processing portion 16 for processing the second detection signal such that a pixel size in accordance with the second detection signal is enlarged relative to a pixel size in accordance with the first detection signal, an image signal formation portion 17 for forming a superimposed image signal by superimposing the second detection signal processed by the signal processing portion upon the first detection signal, and an image display portion 19 for displaying an image of the sample in accordance with the superimposed image signal.

Apparatus for displaying a sample image

The present invention aims at providing an apparatus for morphological observation of a sample or easily identifying a luminous part of a sample. This morphological observation apparatus comprises an illumination system 3 for bombarding charged particles to a sample, a photon detector system for receiving light generated from a luminous part of the sample due to illumination of the charged particles, a photomultiplier tube 7 for detecting electrons coming from various parts of the sample upon illumination of the charged particles in such various ways as to correspond to a surface structure of the sample, and a signal processing unit for superimposing morphological signal, in which a morphological image of the sample 5 and an image of the luminous part are superimposed one upon the other, in accordance with a signal of the photon detector system 9 and a detection signal of a photomultiplier tube 7, and a television monitor 19 for displaying the luminous part of the sample 5 and the morphological image in a superimposed condition relative to each other in accordance with the superimposed signal.

Apparatus for morphological observation of a sample

An electron microscope of scanning type comprises first and second detectors for detecting secondary electrons emitted from a specimen irradiated by a scanning electron beam are disposed across the magnetic field of an objective lens of an electron-optical system of the microscope. The detection signals obtained from the outputs of both detectors are subjected to simultaneous signal processings.

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Tokyo, Japan

Hirotami Koike