Jsr Corporation

Kabushiki Kaisha Toshiba

Hirotaka Shida

Akihiro Takemura

Hiroyuki Yano

Masayuki Hattori

Gaku Minamihaba

Shinichi Hirasawa

Kazuhito Uchikura

Yukiteru Matsui

Mie Matsuo

Atsushi Shigeta

Hirokazu Kato

Nobuo Kawahashi

Dai Fukushima

Kouji Tamori

Masayuki Motonari

Nobuyuki Kurashima

Tomohisa Konno

Takeshi Nishioka

Taichi Abe

Kenji Iwade

Kenji Ishizuki

Kazuo Kawaguchi

Kiyonobu Kubota

Eiichirou Kunitani

Takafumi Shimizu

Masako Kinoshita

Yousuke Shibata

Yasumasa Mori

Mitsuru Meno

Shou Kubouchi

Masatoshi Ikeda

Yuuji Namie

Susumu Yamamoto

Yano Hiroyuki

A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12.

Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method for semiconductor device

A chemical mechanical polishing aqueous dispersion including (A) silica particles, and (B1) an organic acid, the sodium content, the potassium content, and the ammonium ion content of the silica particles (A) determined by ICP atomic emission spectrometry, ICP mass spectrometry, or ammonium ion quantitative analysis using ion chromatography having a relationship in which the sodium content is 5 to 500 ppm and at least one of the potassium content and the ammonium ion content is 100 to 20,000 ppm.

Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method

A chemical mechanical polishing aqueous dispersion is used to polish a polishing target that includes an interconnect layer that contains tungsten. The chemical mechanical polishing aqueous dispersion includes: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica particles. The content (M) (mass %) of the cationic water-soluble polymer (A) and the content (M) (mass %) of the iron (III) compound (B) satisfy the relationship 'M/M=0.004 to 0.1'. The chemical mechanical polishing aqueous dispersion has a pH of 1 to 3.

Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method

A chemical mechanical polishing aqueous dispersion that is used to polish a polishing target that includes a wiring layer that contains tungsten, the chemical mechanical polishing aqueous dispersion including: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica having an average particle diameter calculated from a specific surface area determined by the BET method of 10 to 60 nm, the content (M) (mass %) of the cationic water-soluble polymer (A) and the content (M) (mass %) of the colloidal silica (C) satisfying the relationship 'M/M=0.0001 to 0.003', and the chemical mechanical polishing aqueous dispersion having a pH of 1 to 3.

Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method

A chemical mechanical polishing aqueous dispersion preparation set including: a first composition which includes colloidal silica having an average primary particle diameter of 15 to 40 nm and a basic compound and has a pH of 8.0 to 11.0; and a second composition which includes poly(meth)acrylic acid and an organic acid having two or more carbonyl groups other than the poly(meth)acrylic acid and has a pH of 1.0 to 5.0.

Chemical mechanical polishing aqueous dispersion preparation set, method of preparing chemical mechanical polishing aqueous dispersion, chemical mechanical polishing aqueous dispersion, and chemical mechanical polishing method

A surface treatment composition of this invention is a composition for treating a metal wiring-including surface of a semiconductor substrate, which includes a compound (A) represented by a specific structural formula and a solvent (B) having a boiling point at one atmospheric pressure of 50 to 300&#xb0; C., and has a pH of 4 to 11. According to the surface treatment composition of the present invention, oxidation of metal wiring of a semiconductor substrate can be suppressed and deterioration of the flatness of the metal wiring portion due to unusual oxidation can be suppressed. Furthermore, when an insulating film or a barrier metal film is present on a metal wiring-including surface of the semiconductor substrate, fang and surface roughness of the metal wiring occurring in the interface between the metal wiring and the insulating film or the barrier metal film can be suppressed.

Surface treatment composition, surface treatment method, and method for manufacturing semiconductor device

A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.

Chemical mechanical polishing method and method of manufacturing semiconductor device

A chemical mechanical polishing method, including: chemically and mechanically polishing a polishing target surface by continuously performing a first polishing step and a second polishing step having a polishing rate lower than a polishing rate of the first polishing step, a chemical mechanical polishing aqueous dispersion used in the first polishing step and the second polishing step being a mixture of an aqueous dispersion and an aqueous solution, and the polishing rate being changed between the first polishing step and the second polishing step by changing a mixing ratio of the aqueous dispersion and the aqueous solution.

Chemical mechanical polishing method

Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m/g and less than 160 m/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.

An aqueous dispersion which is excellent in storage stability, and can form a coating film excellent in leveling properties, anti-checking properties, water resistance, etc., transparent and high in hardness, which is obtained by mixing and emulsifying (A) at least one selected from an organosilane represented by (R ) &mdash;(Si)&mdash;(OR ) , a hydrolysate of the organosilane and a partial condensation product of the hydrolysate, (B) a radical polymerizable monomer, (C) an emulsifier and (D) a hydrolytic catalyst for component (A) to reduce the particle size of an emulsion, as well as to allow hydrolysis of component (A) to proceed, and adding (E) a radical polymerization initiator to allow polymerization of component (B) to proceed, has a concentration of alcohols having a boiling point of 100&deg; C. or less of 0.1 to 2.0 wt %, and further contains (F) a component having ultraviolet absorption and/or light stabilization action as needed.

Aqueous dispersion and coated product

Growing community of inventors

Yokkaichi, Japan

Hirotaka Shida