Hitachi-kokusai Electric Inc.

Hiroshi Unami

Yoshikazu Takashima

Shinya Morita

Tomoshi Taniyama

Takashi Ozaki

Kiyohiko Maeda

Sadao Hisakado

A CVD device has a reaction furnace () for processing a wafer (); a seal cap () for sealing the reaction furnace () hermetically; an isolation flange () opposite to the seal cap (); a small chamber () formed by the seal cap (), the isolation flange (), and the wall surface in the reaction furnace (); a feed pipe () for supplying a first gas to the small chamber (); an outflow passage () provided in the small chamber () for allowing the first gas to flow into the reaction furnace (); and a feed pipe () provided downstream from the outflow passage () for supplying a second gas into the reaction furnace (). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.

Substrate processing apparatus and method for manufacturing a semiconductor device

A CVD device has a reaction furnace () for processing a wafer (); a seal cap () for sealing the reaction furnace () hermetically; an isolation flange () opposite to the seal cap (); a small chamber () formed by the seal cap (), the isolation flange (), and the wall surface in the reaction furnace (); a feed pipe () for supplying a first gas to the small chamber (); an outflow passage () provided in the small chamber () for allowing the first gas to flow into the reaction furnace (); and a feed pipe () provided downstream from the outflow passage () for supplying a second gas into the reaction furnace (). Byproducts such as NHCl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.

Growing community of inventors

Tokyo, Japan

Hiroshi Unami