Taiyo Nippon Sanso Corporation

Spp Technologies Co., Ltd.

Hiroshi Taka

Shoichi Murakami

Masayasu Hatashita

Masaya Yamawaki

One object of the present invention is to provide a method for producing a silicon nitride film having a high hydrofluoric acid resistance, a high moisture resistance and an appropriate internal stress on a substrate of which the temperature is controlled at 250&#xb0; C. or lower, the present invention provides a method for producing a silicon nitride film () by a plasma chemical vapor deposition method, wherein a processing gas obtained by adding a hydrogen reducing gas in a range of 200 to 2000 volumetric flow rate to an organosilane gas of 1 volumetric flow rate is used, a pressure in a process chamber () accommodating the substrate () is adjusted to be in a range of 35 to 400 Pa, and a density of high-frequency electric power applied to an electrode installed in the process chamber () is adjusted to be in a range of 0.2 to 3.5 W/cm.

Method for producing silicon nitride film and silicon nitride film

A method of reducing carbon and/or hydrogen atom content ratio relative to contents of silicon atoms and nitrogen atoms in a silicon nitride film formed by a plasma CVD method using an organic silane as a material, and improving film quality such as electrical properties. A silicon nitride film is formed with the organic silane and at least one additive gas selected from a group consisting of hydrogen and ammonia by a plasma CVD method. The silicon nitride film has a carbon atom content ratio of less than 0.8 assuming that a sum of a silicon atom content and a nitrogen atom content in the silicon nitride film is 1. The silicon nitride film has improved properties such as reduced leakage current.

Growing community of inventors

Kawasaki, Japan

Hiroshi Taka