Tokyo Electron Limited

Kawasaki Steel Corporation

Asm Japan K.k.

Nec Corporation

Tokyo Electron Limi Ted

Hiroshi Shinriki

Tomohiro Ohta

Shintaro Aoyama

Masahito Sugiura

Masanobu Igeta

Hiroshi Yamamoto

Kenji Matsumoto

Tsuyoshi Takahashi

Nobuyuki Takeyasu

Takeshi Kaizuka

Yijun Liu

Yumiko Kawano

Tadashi Nakano

Eiichi Kondoh

Tomoharu Katagiri

Yoshimitsu Tamura

Daekyun Jeong

Takashi Magara

Takayuki Komiya

Akira Shimizu

Junichi Arami

Kunitoshi Namba

Kazumi Kubo

Hideki Kiryu

Hiroaki Inoue

Toru Tatsumi

Kazuya Dobashi

Kazuyoshi Yamazaki

Mikio Suzuki

Baiei Kawano

Koji Homma

A method of forming a single-metal film on a substrate by plasma ALD includes: contacting a surface of a substrate with a &#x3b2;-diketone metal complex in a gas phase; exposing molecule-attached surface to a nitrogen-hydrogen mixed plasma; and repeating the above steps, thereby accumulating atomic layers to form a single-metal film on the substrate.

Method for forming metal film by ALD using beta-diketone metal complex

A metal film composed of multiple atomic layers continuously formed by atomic layer deposition of Ru and Ta or Ti includes at least a top section and a bottom section, wherein an atomic composition of Ru, Ta or Ti, and N varies in a thickness direction of the metal film. The atomic composition of Ru, Ta or Ti, and N in the top section is represented as RuTa/Ti)Nwherein an atomic ratio of Ru/(Ta/Ti) is no less than 15, and z1 is 0.05 or less. The atomic composition of Ru, Ta or Ti, and N in the bottom section is represented as RuTa/TiNwherein an atomic ratio of Ru/(Ta/Ti) is more than zero but less than 15, and z2 is 0.10 or greater.

Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition

A method for forming interconnect wiring, includes: (i) covering a surface of a connection hole penetrating through interconnect dielectric layers formed on a substrate for interconnect wiring, with an underlying alloy layer selected from the group consisting of an alloy film containing ruthenium (Ru) and at least one other metal atom (M), a nitride film thereof, a carbide film thereof, and an nitride-carbide film thereof, and (ii) filling copper or a copper compound in the connection hole covered with the underlying layer.

Ruthenium alloy film for copper interconnects

A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing an &#x2014;NH2 or &#x3e;NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere; (iii) introducing a reducing compound to the reaction space and then purging a reaction space; (iv) introducing a metal halide compound to the reaction space and then purging the reaction space; (v) introducing a gas containing N and H and then purging the reaction space; (vi) repeating steps (iii) to (v) in sequence to produce a metal-containing barrier layer; and (vii) forming a metal film on the metal-containing barrier layer.

Method for forming metal wiring structure

A method of forming a Ta&#x2014;Ru metal liner layer for Cu wiring includes: (i) conducting atomic deposition of Ta X times, each atomic deposition of Ta being accomplished by a pulse of hydrogen plasma, wherein X is an integer such that a surface of an underlying layer is not covered with Ta particles; (ii) after step (i), conducting atomic deposition of Ru Y times, each atomic deposition of Ru being accomplished by a pulse of hydrogen plasma, wherein Y is an integer such that the Ta particles are not covered with Ru particles; and (iii) repeating steps (i) and (ii) Z times, thereby forming a Ta&#x2014;Ru metal liner layer on a Cu wiring substrate.

Method for forming Ta-Ru liner layer for Cu wiring

A method to solve such a problem that plasma will not ignite in restarting operation of a processing container that has not been operated with the inside kept drawn to vacuum. Gas containing oxygen is passed in a processing container, and ultraviolet light is irradiated to the gas while gas inside the processing containeris being discharged. After that, a remote plasma sourceis driven to ignite plasma.

Plasma igniting method and substrate processing method

A substrate processing apparatus includes a processing vessel provided with a stage holding thereon a substrate to be processed and evacuated at an evacuation port, and a source gas supplying system that supplies plural source gases to the processing vessel separately in the form of a laminar flow, wherein the evacuation port has a slit-form shape extending in a direction generally intersecting perpendicularly to a direction of the laminar flow, the evacuation port is engaged with a valve having a valve body formed with a slit-form opening corresponding to the slit-form shape of the evacuation port, the slit-form opening being provided so as to cause a displacement with respect to the evacuation port in a direction generally intersecting perpendicularly to an extending direction of the evacuation port, the valve changing a degree of valve opening thereof via displacement of said slit-form opening.

Substrate processing apparatus and method, high speed rotary valve and cleaning method

A method of depositing a ruthenium(Ru) thin film on a substrate in a reaction chamber, includes: (i) supplying a gas of a ruthenium precursor into the reaction chamber so that the gas of the ruthenium precursor is adsorbed onto the substrate, wherein the ruthenium precursor a ruthenium complex contains a non-cyclic dienyl; (ii) supplying an excited reducing gas into the reaction chamber to activate the ruthenium precursor adsorbed onto the substrate; and (iii) repeating steps (i) and (ii), thereby forming a ruthenium thin film on the substrate.

Ruthenium thin film-formed structure

A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the placing portion for supplying a gas onto a substrate surface, a gas-supply port for introducing the gas into the gas-dispersion guide, a gas-dispersion plate disposed on the side of the substrate of the gas-dispersion guide and having multiple gas-discharge pores, a first exhaust port for exhausting, downstream of the gas-dispersion plate, the gas supplied onto the substrate surface from the gas-dispersion plate, and a second exhaust port for exhausting, upstream of the gas-dispersion plate, a gas inside the gas-dispersion guide via a space between the gas-dispersion guide and the gas-dispersion plate.

Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms

In a cleaning step of a substrate-processing device, vacuum drawing is made for the space between an inner chamber and an outer chamber that receives the inner chamber. Temperature of the inner chamber is set higher than the temperature of the inner chamber during substrate processing and set lower than the temperature of a substrate support member. After that, a cleaning gas containing hexafluoroacetylaceton (Hhfac) is supplied in the inner chamber, and substances to be cleaned off adhering inside the inner chamber are removed.

Method of cleaning substrate-processing device and substrate-processing device

A substrate-processing apparatus () comprises a radical-forming unit () for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel () in which a substrate (W) to be processed is held, and a gas-supplying unit () which is connected to the radical-forming unit. The gas-supplying unit () controls the mixture ratio between a first raw material gas containing the nitrogen and a second raw material gas containing oxygen, and supplies a mixture gas of a desired mixture ratio to the radical-forming unit. By supplying the nitrogen radicals and oxygen radicals mixed at the controlled mixture ratio to the surface of the substrate, an insulating film having a desired nitrogen concentration is formed on the surface of the substrate.

Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus

A shower head having a plurality of ejection holes for supplying an organic metal gas at uniform density to the surface of a substrate and a plurality of ejection holes for supplying an oxidizing gas at uniform density to the same is provided in a reaction furnace of an MOCVD system. A heater for heating the inside to a temperature higher than the thermal decomposition point of the organic metal gas but lower than the film forming temperature is provided in the vicinity of the substrate side surface of the shower head.

Method for forming thin film and apparatus for forming thin film

A gas-feeding apparatus configured to be connected to an evacuatable reaction chamber includes a gas-distribution head for introducing gases into the chamber through a head surface. The gas-feeding head includes a first section for discharging a gas through the head surface toward a susceptor and a second section for discharging a gas through the head surface toward the susceptor. The first and the second sections are isolated from each other in the gas-distribution head, at least one of which section is coupled to an exhaust system for purging therefrom a gas present in the corresponding section without passing through the head surface.

Thin-film deposition apparatus

A substrate processing method includes the steps of removing carbon from a surface of a silicon substrate by irradiating an ultraviolet light on the surface in an essentially ultraviolet nonreactive gas atmosphere and forming an oxide film or an oxynitride film on the surface of the silicon substrate by irradiating an ultraviolet light thereon in an essentially ultraviolet reactive gas atmosphere. Further, a computer readable storage medium stores therein a program for controlling the substrate processing method.

Substrate processing method and a computer readable storage medium storing a program for controlling same

A substrate processing method includes the step of removing carbon from a silicon substrate surface and planarizing the silicon substrate surface from which carbon has been removed.

Growing community of inventors

Matsudo, Japan

Hiroshi Shinriki