Dainippon Screen Mfg. Co., Ltd.

Hiroshi Okada

Sadao Hirae

Motohiro Kono

Hideaki Matsubara

The method obtains a first C-V curve prior to irradiation with light and a second C-V curve after the irradiation with light. The method determines the amount of the intra-film impurity ions in an insulating film in the state prior to the irradiation with light, based on the first and the second C-V curves.

Method of determining impurity content and apparatus for the same

A stage 130 includes a metal base and an anti-metal contamination film formed on the metal base a semi-conductor wafer 120. The anti-metal contamination film is constructed of a material selected from the group consisting of a semi-conductor film, a semi-conductor oxide film, a semi-conductor nitride film, a semi-conductor carbide film, and a polytetrafluoroethylene film. The rear face of the semi-conductor wafer 120 mounted on the stage 130 is in direct contact with the anti-metal contamination film but not with the metal surface. The anti-metal contamination film, which does not contain simple substances of metals, effectively protects the rear face of the semi-conductor wafer 120 from contamination metal.

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Kyoto, Japan

Hiroshi Okada