Tokyo Electron Limited

Hiroshi Nagahata

Ryota Sakane

Hideyuki Kobayashi

Keisuke Tanaka

Ryuichi Asako

Jun Shinagawa

Takashi Kitazawa

Koji Yamagishi

Joji Takayoshi

Yuki Kataoka

Akihito Toda

Kazuya Kato

Toshihiko Shindo

Hiroki Amemiya

Chungjong Lee

Kazuo Sawai

Toshihiro Kitao

Hidehiko Sato

Yuri Kimura

Jungwoo Na

A substrate processing apparatus includes a process module that includes: a stage having a first surface on which a substrate is placed and a second surface, a process module including an edge ring placed on the second surface, a measurement unit measuring an etching rate of the substrate; and a controller. The controller transfers the substrate to different transfer positions on the first surface and etches the substrate for each transfer position, acquires etching rates at points on a concentric circle of the substrate in an end of the substrate, for each transfer position, from the measurement unit, generates an approximate curve of each of the concentric circles based on each of the acquired etching rates for each transfer position, calculates each linear expression representing a movement direction of the substrate, based on the approximate curve for each transport position, and calculates an intersection coordinate of the linear expressions.

Substrate processing apparatus and substrate transfer position adjustment method

A temperature estimation apparatus includes an estimation unit configured to successively estimate temperature data by successively inputting given time series process data relating to conditions inside a processing space in which plasma processing is performed, into a time series model generated in advance that correlates data values, in each time period, of time series process data relating to conditions inside the processing space, with a data value, at a respective time point, of time series temperature data measured inside the processing space.

Temperature estimation apparatus, plasma processing system, temperature estimation method and temperature estimation program

A method of evaluating tool health of a plasma tool is provided. The method includes providing a virtual metrology (VM) model that predicts a wafer characteristic based on parameters measured by module sensors and in-situ sensors of the plasma tool. A classification model is provided that identifies a plurality of failure modes of the plasma tool. An initial test is performed on an incoming wafer to determine whether the incoming wafer meets a preset requirement. The wafer characteristic is predicted using the VM model when the incoming wafer meets the preset requirement. A current failure mode is identified using the classification model when the wafer characteristic predicted by using the VM model is outside a pre-determined range.

Tool health monitoring and classifications with virtual metrology and incoming wafer monitoring enhancements

A plasma processing apparatus includes a process chamber, and a pedestal provided in the process chamber and configured to hold a substrate. The plasma processing apparatus includes a first gas supply part configured to be able to supply a first gas from a location facing the pedestal, and a radio frequency power source configured to convert the first gas to plasma. A shield part to block the first gas converted to plasma is provided around the pedestal. The plasma processing apparatus further includes an evacuation part configured to evacuate the process chamber through the shield part, and a second gas supply part configured to be able to supply a second gas to a space between the shield part and the evacuation part.

Plasma processing apparatus and plasma processing method

A processing method includes a first process of exposing a first sensor to a processing space within a chamber and blocking a second sensor from the processing space within the chamber; a second process of supplying a first processing gas containing a precursor gas into the chamber; a third process of controlling a state within the chamber based on a measurement value of the first sensor; a fourth process of blocking the first sensor from the processing space within the chamber and exposing the second sensor to the processing space within the chamber; a fifth process of supplying a second processing gas containing a reactant gas into the chamber; and a sixth process of controlling the state within the chamber based on a measurement value of the second sensor. The first process to the six process are repeatedly performed multiple times.

Processing method and processing apparatus

A plasma processing method can suppress both surface roughness of a wiring and surface roughness of a metal mask. The method includes generating plasma of a first processing gas containing a fluorocarbon gas and/or a hydrofluorocarbon gas to etch a diffusion barrier film until a copper wiring is exposed and generating plasma of a second processing gas containing a carbon-containing gas to form an organic film on a surface of a target object in which the diffusion barrier film is etched.

Method of processing target object

A determination method, a control method, a determination apparatus, a pattern forming system, and a storage medium can determine a replacement time of a focus ring accurately and quickly. The determination method is capable of determining the replacement time of a focus ring that surrounds a substrate to increase uniformity of a pattern in a surface of the substrate when the pattern is formed by etching a film on the substrate. The determination method includes measuring a shape or a critical dimension of the pattern; and determining the replacement time of the focus ring based on the measured shape or the measured critical dimension of the pattern.

Determination method, control method, determination apparatus, pattern forming system and program

A plasma processing method includes the steps of: loading a substrate on a lower electrode, the substrate having a resist mask formed on a transcription film; supplying a processing gas into a processing chamber; forming a magnetic field, which is oriented toward one direction and perpendicular to a line connecting an upper and the lower electrode; supplying a high frequency power to the lower electrode in the processing chamber to thereby form an electric field; converting the processing gas into a plasma by a magnetron discharge caused by a presence of an orthogonal electromagnetic field; and forming lenses on the transcription film by using the plasma. The high frequency power is supplied to the lower electrode while controlling the magnitude of the electric power divided by a surface area of the substrate to be in a range from about 1200 W/31415.9 mmto 2000 W/31415.9 mm.

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Miyagi, Japan

Hiroshi Nagahata