Mitsubishi Denki Kabushiki Kaisha

Hiroshi Miyatake

Masahiro Shimizu

Katsuhiro Tsukamoto

Nobuo Fujiwara

Satoshi Iida

Tetsuhiro Fukao

Shigenori Sakamori

Yoshihiro Kusumi

Provided are a method for manufacturing contact structure to prevent, in the wire of a borderless structure, erosion in the contact area between the wire and a conductor. An interlayer insulating film (300) having a wire burying hole is formed and a conductor (400) is buried in the hole. Then, a wire layer (500) covering the hole is formed on the interlayer insulating film (300). The wire layer (500) is made so as to have a borderless structure by using a resist (540) as a mask. A barrier metal layer (510) suppresses erosion in the contact area between the conductor (400) and the wire layer (500).

Method for manufacturing contact structure

A method to mend a black defect and a white defect of a phase shift mask pattern so that the mended phase shift mask pattern has an accurately defined pattern. In the vicinity of a black defect and the area around the same, a mending phase shifter is formed into a thickness twice as large as the thickness d of a phase shifter. All light beams through a black defect area are nearly 0 degree out of phase with a non-phase-shifted light beam, thereby the phase shift mask pattern having the black defect becoming a phase shift mask pattern with an accurately defined pattern. In a similar manner, every light beam through a white defect area is nearly 180 degree out of phase with a non-phase-shifted light beam. As a result, a mended phase shift mask pattern has an accurately defined pattern.

Method of mending a defect in a phase shift pattern

A method of manufacturing a semiconductor capacitor provided with a substrate, a dielectric film formed on the substrate and a pair of electrode layers stacked on both sides of the dielectric film comprises a step of forming a polycrystalline silicon layer for serving as one of the electrode layers on the substrate, a step of making at least a surface region of the polycrystalline silicon layer amorphous, a step of forming the dielectric film on the polycrystalline silicon layer while maintaining an amorphous surface state, and a step of forming another one of the electrode layers on the dielectric film. The lower electrode of the capacitor has its surface or the whole layer made amorphous. The surface of the electrode which is amorphous has smooth surface configuration, thereby improving the quality of the dielectric film formed thereon.

Method of manufacturing semiconductor capacitive element

Growing community of inventors

Tokyo, Japan

Hiroshi Miyatake