Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Other

Hiroshi Komurasaki

Hisayasu Satoh

Hisayasu Sato

Takahiro Miki

Toshio Kumamoto

Shigenobu Maeda

Kazuya Yamamoto

Kimio Ueda

Tomohiro Sano

Yasushi Hashizume

Hideyuki Wakada

Masao Ito

Yoshiki Wada

Takeshi Shigenobu

Naoyuki Kato

Keitaro Sekine

Akira Hyogo

Shuji Yoshida

Tetsuya Heima

Kinya Hosoda

An oscillator circuit is formed of a differential LC resonant circuit formed of an L load differential circuit including inductance-variable portions and a capacitor element, and a positive feedback circuit formed of N-channel MOS transistors. The inductance-variable portion is configured to vary the inductance by selecting a plurality of switch circuits arranged between a plurality of arbitrary positions on a spiral interconnection layer and the input/output terminal, and thereby can control an oscillation frequency. The inductance-variable portions form an inductor pair when the switch circuit among the switch circuits coupled between the first input/output terminals is turned on together with the switch circuit.

Oscillator circuit and L load differential circuit achieving a wide oscillation frequency range and low phase noise characteristics

An oscillator circuit is formed of a differential LC resonant circuit formed of an L load differential circuit including inductance-variable portions and a capacitive element, and a positive feedback circuit formed of N-channel MOS transistors. The inductance-variable portion is configured to vary the inductance by selecting a plurality of switch circuits arranged between a plurality of arbitrary positions on a spiral interconnection layer and the input/output terminal, and thereby can control an oscillation frequency. The inductance-variable portions form an inductor pair when the switch circuit among the switch circuits coupled between the first input/output terminals is turned on together with the switch circuit.

A first NMOS transistor has its source connected to ground and its drain connected to the source of a second NMOS transistor of high breakdown voltage via an inductor. The second NMOS transistor of high breakdown voltage has its drain connected to a power supply line Vdd via the inductor. An output Vout is provided from the drain of the second NMOS transistor. When an input voltage Vin is applied to the gate of the first NMOS transistor and a bias voltage Vgis applied to the gate of the second NMOS transistor, the first and second NMOS transistors operate. The voltage amplitude of the load end of the second NMOS transistor of high breakdown voltage connected to the inductor swings about the power supply voltage. The voltage amplitude increases as the output voltage becomes higher.

Semiconductor device including semiconductor element of high breakdown voltage

A mixer circuit according to the present invention includes a first differential transistor pair of two transistors, a second differential transistor pair of two transistors, an impedance element connected to the first differential transistor pair, an impedance element connected to the second differential transistor pair, an inductor connected to nodes A, B, a current source connected to node A, a current source connected to node B, and a capacitor. A mixer circuit with high conversion gain and small distortion can be obtained.

Mixer circuit having component for frequency conversion

There is provided a frequency voltage converter comprises a first transmission line for transmitting an input signal and a second transmission line provided with a delay line circuit, a third transmission line for transmitting a reference signal and a fourth transmission line provided with a delay line circuit, a mixer circuit, and a locked loop having a control circuit for outputting the same control signal to control portions of both delay line circuits so that the amount of a delay by the delay line circuit reaches one cycle of the reference signal, thereby holding linearity with respect to the frequency of a modulated wave signal and executing frequency voltage conversion even when a center frequency is low.

Frequency voltage converter

A variable gain amplifier is configured of an amplification circuit and a control circuit controlling a gain of the amplification circuit. The amplification circuit has first and second MOS transistors identical in characteristics and having respective sources connected to a first fixed potential. The amplification circuit has a differential gain proportional to a square root of a ratio between a current flowing through the first MOS transistor and a current flowing through the second MOS transistor. The control circuit applies a potential corresponding to a constant voltage plus a control voltage to a gate of the first MOS transistor and a potential corresponding to the constant voltage minus the control voltage to a gate of the second MOS transistor.

Variable gain amplifier with a gain exhibiting a linear in dB characteristic relative to a control voltage

A semiconductor device is arranged by having a shield/planarization portion including a silicided active region formed on the main surface of a semiconductor substrate and a non-active region provided by device-isolation on the surface, and a metal layer such as a pad, wiring layer or inductor having a predetermined pattern, formed on an interlayer insulation film formed on the above shield/planarization portion. Just under the metal layer is disposed the shield/planarization portion in which the area ratio of the active region to the non-active region is given in a predetermined proportion and the active region is electrically grounded.

Semiconductor integrated circuit device

A mixer circuit includes a first signal input terminal connected to the gate of a first MOSFET, and a second signal input terminal connected to the gate of a second MOSFET. The mixer circuit is configured such that a relationship (V &minus;V )<(V &minus;V ) is established, where V is a bias voltage applied to the gate of the first MOS transistor, V is a bias voltage applied to the gate of the second MOS transistor, and V is a threshold voltage of the first MOS transistor, the bias voltages V and V being each defined with respect to the source bias voltage of the second MOS transistor. This can implement high linearity mixer circuit even when operated at a low power supply voltage.

High linearity, high gain mixer circuit

In a variable frequency divider formed of a latch train, a frequency division ratio is set through selective invalidating a feedback signal to a first stage latch from the last stage latch. A size of MOS (metal-insulator-semiconductor) transistors for switching the division ratio is made larger than that of other MOS transistors in differential stages in the last stage latch circuit. Further, differential signals are transmitted as feedback signals to the first stage latch circuit. A F/(F&plus;1) prescaler which operates stably with a low current consumption under a low power supply voltage condition is implemented.

Variable frequency divider circuit

An inductor recognition method for recognizing an inductor, a layout inspection method wherein it is possible to automatically carry out a verification of a design standard, in the inductor and a process for a semiconductor device using this layout inspection method are provided. The inductor recognition method includes the step of arranging an inductor position representation mark so as to surround a design pattern of an interconnection part, which works as an inductor and has a starting point and a finishing point; the step of arranging a starting point position representation mark and a finishing point position representation mark so as to surround, respectively, regions corresponding to the starting point and the finishing point; and the step of recognizing information with respect to an inductor by means of the inductor position representation mark, the starting point position representation mark and the finishing point position representation mark.

Inductor recognition method, layout inspection method, computer readable recording medium in which a layout inspection program is recorded and process for a semiconductor device

A mixer circuit having a high conversion gain which is excellent in linearity comprises an amplifier ( A) for amplifying one of two signals to be mixed with each other. The amplifier ( A) comprises a low-pass filter ( ) not damping an input voltage (v ) of a frequency (f ) on a negative feedback circuit for its output. Due to the low-pass filter ( ), it is possible to reduce harmonics by increasing the feedback amount as the frequency is increased.

Mixer circuit with negative feedback filtering

An object is to obtain a semiconductor in which the body potential can be externally fixed with a body potential fixing portion and in which no semiconductor region where ions of different conductivity types are mixed exists. A semiconductor layer ( ) on an insulating layer ( ) has an under semiconductor layer ( ) under an element isolation portion ( ) and a body ( ) under a closed-loop portion ( ). A gate structure ( ) has gate pads ( ) and the closed-loop portion ( ). While a body potential fixing portion ( ) is located on the opposite side of the element isolation portion ( ) from the gate structure ( ), the gate structure ( ) is formed from the semiconductor layer ( ) to extend on the element isolation portion ( ). Accordingly, the body potential fixing portion ( ) can be connected to the body ( ) through the under semiconductor layer ( ) without through the pn junction formed by the source ( ) and the semiconductor layer ( ).

Semiconductor device having body potential fixing portion and closed-loop gate structure

An object is to obtain an amplification circuit which provides a high gain even with a low-voltage power supply. The amplification circuit comprises an MOS transistor (M1) having a gate receiving an amplified signal (RFin), a source electrically connected to ground, and a drain electrically connected to a supply voltage (VDD), wherein the back gate-source voltage (Vbs) of the MOS transistor (M1) is made larger as the gate-source voltage (Vgs) of the MOS transistor (M1) becomes larger, thereby making the threshold voltage (VT) of the MOS transistor (M1) smaller.

Amplification circuit

An A/D converter simplifies its circuit configuration without deteriorating accuracy in A/D conversion. A circuit is formed of a folding and interpolation type. A gain-variable pre-amplifier group 11 amplifies each of reference voltages Vref1 to VrefN and an analog input voltage Vin, to output the result to a folding amplifier group 12, while a gain-variable pre-amplifier group 21 amplifies each of reference voltages Vrr1 to VrrJ and the analog input voltage Vin, to output the result to a comparator group 24. Each of pre-amplifiers constituting the gain-variable pre-amplifier groups 11 and 21 has an amplification factor that varies in upper and lower comparison periods according to a clock control signal .PHI.cnt.

Folding type A/D converter and folding type A/D converter circuit

A phase shifter is provided between common emitters of two differential transistor pairs of a mixer circuit. The phase shifter changes the phase of a voltage signal input to one common emitter by 180.degree. and applies it to the other common emitter, and causes a current in accordance with the voltage between the common emitters. As compared with the prior art employing two stages of vertically connected differential transistor pairs, the power supply voltage can be reduced.

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Hyogo, Japan

Hiroshi Komurasaki