Tokyo Ohka Kogyo Co., Ltd.

Nec Corporation

Toyko Ohka Kogyo Co., Ltd.

Hiroshi Komano

Hideo Hada

Toshimasa Nakayama

Kiyoshi Uchikawa

Yoshiki Sugeta

Toshiki Okui

Hiroyuki Yamazaki

Kazufumi Sato

Koji Saito

Toshimi Aoyama

Mitsuru Sato

Masaru Shida

Kouichi Misumi

Masakazu Kobayashi

Takeshi Iwai

Toshiyuki Ogata

Katsuyuki Ohta

Kazumasa Wakiya

Kazuaki Utsumi

Koji Matsui

Kotaro Endo

Kiyoshi Ishikawa

Hatsuyuki Tanaka

Toshikazu Tachikawa

Toshiya Takagi

Masahito Tanabe

Mitsuru Kimura

Tatsuya Hashiguchi

Eiichi Ogawa

Satoshi Fujimura

Kazuyuki Nitta

Fumitake Kaneko

Etsuko Iguchi

Junichi Onodera

Miwa Miyairi

Yasushi Washio

Koutaro Endo

A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 &#x3bc;m thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.

Negative photoresist compositions for the formation of thick films, photoresist films and methods of forming bumps using the same

The invention discloses a novel ester compound of an unsaturated carboxylic acid represented by the general formulain which Ris preferably a hydrogen atom or methyl group, Ris preferably a trifluoromethyl group, Ris a non-aromatic polycyclic hydrocarbon group or, preferably, an adamantyl group and Ris preferably a hydrogen atom or methyl group. This unsaturated ester compound is polymerizable to give a (co)polymeric resin which can be used as a base resinous ingredient in a photoresist composition for light exposure with ultraviolet light of a very short wavelength by virtue of the high transparency to the short-wavelength light. A synthetic method for the preparation of the novel ester compound is disclosed.

Fluorine-containing monomeric ester compound for base resin in photoresist composition

A chemically amplified negative photoresist composition is used for the formation of thick films having a thickness of 20 to 150 &#x3bc;m and includes (A) an alkali-soluble resin, (B) a compound which generates an acid upon irradiation with active light or radiant ray, and (C) a compound which serves as a crosslinking agent in the presence of an acid. The alkali-soluble resin (A) includes (a1) a novolak resin having a weight average molecular weight of from 5000 to 10000, and (a2) a polymer containing at least a hydroxystyrene constitutional unit and having a weight average molecular weight of less than or equal to 5000.

Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same

A positive resist composition includes (A) an alkali-soluble polysiloxane resin, (B) an acid generator composed of a compound which generates an acid upon irradiation of active light or radiant ray, and (C) a compound in which at least one hydrogen atom of phenolic hydroxyl group or carboxyl group is substituted with an acid-decomposable group. This positive resist composition is useful for processes using F excimer laser (157 nm), extreme-ultraviolet rays (EUV, vacuum ultraviolet rays; 13 nm) and other light sources having wavelengths equal to or shorter than that of KrF excimer laser, and has high definition and can form resist patterns with good sectional shapes. A base material carrying a layer of the positive resist composition is also useful.

Positive resist composition and base material carrying layer of the positive resist composition

A positive photoresist composition includes an alkali-soluble novolak resin (A), an alkali-soluble acrylic resin (B) and a quinonediazido-group-containing compound (C) and is used for the formation of a thick film 5 to 100 &mgr;m thick. The ingredient (B) includes 30% to 90% by weight of a unit (b1) derived from a polymerizable compound having an ether bond and 2% to 50% by weight of a unit (b2) derived from a polymerizable compound having a carboxyl group. The composition is applied on a substrate and thereby yields a photoresist film. Likewise, the composition is applied onto a substrate on an electronic part, is patterned, is plated and thereby yields bumps.

Positive photoresist composition for the formation of thick films, photoresist film and method of forming bumps using the same

Proposed is a chemical-sensitization positive-working photoresist composition for photolithographic patterning in the manufacture of semiconductor devices having high transparency even to ultraviolet light of very short wavelength such as ArF excimer laser beams of 193 nm wavelength to exhibit high photosensitivity and capable of giving a patterned resist layer with high pattern resolution. The composition comprises (A) a resinous ingredient which is subject to an increase of the solubility in an aqueous alkaline developer solution in the presence of an acid and (B) a radiation-sensitive acid-generating compound. Characteristically, the resinous ingredient as the component (A) is a (meth)acrylic copolymer of which from 20% to 80% by moles of the monomeric units are derived from a (meth)acrylic acid ester of which the ester-forming group has a specific oxygen-containing heterocyclic ring structure.

Chemical-sensitization photoresist composition

The present invention provides a photopolymerizable composition for a color filter containing an addition-polymerizable compound having at least one ethylenically unsaturated double bond, a photopolymerization initiator and the oxide of at least one metal selected from the group consisting of Cu, Fe, Mn, Cr, Co, Ni and Al and being substantially free from any halogen atom; and a process for producing a color filter. The photopolymerizable compositions for a color filter makes it possible to form a color filter having good heat resistance and high electrical insulation resistance and have high storage stability.

Photopolymerizable composition for color filter

Disclosed is a novel aqueous developer solution used in the development treatment of an actinic ray-sensitive resist for the manufacture of, for example, semiconductor devices, which is capable of giving a patterned resist layer free from the troubles of film residue or scum deposition in any finest patterning. The developer solution contains, in addition to a nitrogen-containing organic basic compound, e.g., tetramethyl ammonium hydroxide, dissolved in an aqueous medium as the solvent, an anionic surface active agent which is a diphenyl ether compound having at least one ammonium sulfonate group, such as an ammonium alkyl diphenylether sulfonate, in a concentration of 0.05 to 5% by weight.

Developer solution for acitinic ray sensitive resist

The present invention provides a composition for forming an antireflective coating film which is not liable to intermixing between the resist composition layer and the antireflective coating layer and a method for forming a resist pattern having an excellent dimensional accuracy and section shape. The composition consists of (A) a compound which produces an acid upon irradiation with actinic rays, (B) a compound which undergoes crosslinking reaction in the presence of an acid, (C) a dye and (D) an organic solvent. The method for forming a resist pattern comprises applying the composition for forming an antireflective coating film to a semiconductor substrate, drying the composition coated, irradiating the entire surface of the coated material with actinic rays so that it undergoes crosslinking reaction to form an antireflective coating film thereon, applying a resist composition to the antireflective coating film, drying the coated material, and then subjecting the coated material to lithographic processing to form a resist pattern thereon.

Composition for forming antireflective coating film and method for forming resist pattern using same

Process for producing color filter

Disclosed herein is a post-ashing treating liquid composition comprising a salt of hydrofluoric acid with a base free from metal ions, a water-soluble organic solvent, water, and an acetylene alcohol/alkylene oxide adduct. Disclosed also herein is a process for treatment with said treating liquid composition. For removal of resist residues such as modified photoresist films and metal depositions, the treating liquid composition and the treating process can be advantageously applied to the substrates having been dry-etched, followed by ashing under severe conditions, without corrosion on metal layers and damage to an organic SOG layer formed thereon.

Post-ashing treating liquid compositions and a process for treatment therewith

Positive-working photoresist composition

Growing community of inventors

Kanagawa, Japan

Hiroshi Komano