Tel-Varian Limited

Tokyo Electron Limited

Hiroshi Kobayashi

Yuichi Wada

Jiro Katsuki

Yoshihiro Sato

Yumiko Kawano

Tetsuro Takahashi

Shigetoshi Hosaka

Yoshinori Osaki

Tomoe Nakayama

Tetsuya Yano

In a method for forming an insulating film by performing plasma nitriding process to an oxide film on a substrate and then by annealing the substrate in a process chamber (), the substrate is annealed under a low pressure of 667 Pa or lower. The annealing is performed for 5 or 45 seconds. The plasma nitriding process is performed by microwave plasma by using a planar antenna whereupon a multitude of slot holes are formed.

Insulating film forming method and substrate processing method

The multilevel interconnection forming method of the present invention comprises the following. A metal film containing aluminum is deposited on an insulating film of a substrate, and the metal film is patterned, to form a wiring layer of a first layer. An interlayer dielectric film forming part of the first layer is formed on an entire surface of the substrate, such that the interlayer dielectric film covers the wiring layer from upside. A hole is formed at a predetermined position of the interlayer dielectric film such that the hole reaches the wiring layer of the first layer. Aluminum is selectively deposited and filled into the hole by a CVD method, such that the aluminum is filled at a volume ratio smaller than 100% with respect to the hole. An active metal film is formed on an entire upper surface of an interlayer dielectric film including the hole filled with the aluminum. A metal layer containing aluminum is formed on the active metal film. The metal layer is made to flow into the hole by reflowing, to completely fill the hole and to planarize the surface of the metal layer. The metal layer is subjected to be patterned, to form a wiring layer of a second layer, after the surface of the metal layer is planarized by the reflowing.

Multilevel interconnection forming method for forming a semiconductor

In a treatment apparatus, a collimator is insulated electrically from the other equipment to be rendered electrically floating, and also the potential of the collimator is variably controllable by a variable DC power source. Therefore, the thickness in plane of the layer to be produced can be uniformalized by controlling the voltage applied to the collimator, without changing both layout and figure of the hardware, e.g., permanent magnet, without process, and further without both beginning and end of a target.

Treatment apparatus

The sputtering system of the present invention includes a spare collimator storage chamber for accommodating one or more spare collimators and a processing chamber, which are provided in one-piece or in communication with each other through a gate valve. A used collimator in the processing chamber is quickly and readily replaced with a new collimator stored in the spare collimator storage chamber by a collimator exchanging device without exposing the interior of the processing chamber to atmospheric air.

Processing apparatus with collimator exchange device

A processing apparatus wherein a collimator which restricts sputtering directions of sputtered particles from a target comprises a plurality of slats arranged substantially parallel with each other. The respective slats constitute a louver mechanism in which rotatable rods are rotated to replace the side thereof facing the target and the side thereof facing the object-to-be-processed with each other. Because of the louver mechanism, the portion of the interior of a processing vessel belonging to the target and the portion thereof belonging to the object-to-be processed can be closed off from each other, and a side of the collimator facing the target and a side thereof facing the object-to-be-processed can be replaced with each other. As a result, the collimator has also a shutter function, and can suppress generation of particles.

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Kofu, Japan

Hiroshi Kobayashi