Niigata University

Sumco Corporation

Niigata Univerasity

Hiroshi Kaneta

Terutaka Goto

Yuichi Nemoto

Masataka Hourai

Mitsuhiro Akatsu

Hourai Masatka

A quantitative evaluation method, a method for manufacturing a silicon wafer, and a silicon wafer manufactured by the method, enabling more efficient evaluation of the concentration of atomic vacancies existing in a silicon wafer. The quantitative evaluation method includes steps of: oscillating, in a state in which an external magnetic field is applied to a silicon wafer () while keeping the silicon wafer () at a constant temperature, an ultrasonic wave pulse and receiving a measurement wave pulse obtained after the ultrasonic wave pulse is propagated through the silicon wafer () for detecting a phase difference between the ultrasonic wave pulse and the measurement wave pulse; and calculating an elastic constant from the phase difference. The external magnetic field is changed to calculate the elastic constant corresponding to a change in the external magnetic field for evaluating a concentration of atomic vacancies in the silicon wafer ().

Method for quantitatively evaluating concentration of atomic vacancies existing in silicon wafer, method for manufacturing silicon wafer, and silicon wafer manufactured by the method for manufacturing silicon wafer

A quantitative evaluation device and method of an atomic vacancy, which are capable of efficiently and quantitatively evaluating an atomic vacancy existing in a silicon wafer. A quantitative evaluation deviceis equipped with a detectorincluding an ultrasonic generatorand an ultrasonic receiver, a silicon sampleformed with the ultrasonic generatorand the ultrasonic receiveron a silicon wafercomprising perfect crystal silicon, a magnetic force generatorfor applying an external magnetic field to the silicon sample, and a coolercapable of cooling and controlling the silicon sampleto a range of temperatures lower than or equal to 50K. The ultrasonic generatorand the ultrasonic receiverare each equipped with a transducerincluding a thin film oscillatorformed from a high-polymer material with a physical property capable of following an expanding action of a silicon waferin association with a temperature drop in the above range of the temperatures and whose molecular axes are oriented in the direction of an electric field when decreasing temperature with the electric field applied thereto and further, including electrodesfor applying an electric field to the thin film oscillator

Quantitative evaluation device of atomic vacancies existing in silicon wafer, method for the device, silicon wafer manufacturing method, and thin-film oscillator

There is provided a quantitative evaluation device or the like of atomic vacancy existing in a silicon wafer in which the atomic vacancy concentration in the silicon wafer can be quantitatively evaluated by forming a rationalized thin-film transducer on a surface of a silicon sample without conducting an acceleration treatment for enhancing the concentration. This is characterized by comprising a magnetic force generating meansfor applying an external magnetic field to a silicon samplecut out from a given site of a silicon wafer, a temperature controlling meanscapable of cooling the silicon sampleto a temperature region of not higher than 50 K, a ultrasonic oscillating-detecting meansfor oscillating ultrasonic pulse to the surface of the silicon sampleand propagating the oscillated ultrasonic pulse into the silicon sampleand detecting a change of sound velocity in the propagated ultrasonic pulse, wherein a thin-film transducerhaving properties capable of following to an expansion of the silicon sampleat the above temperature region and substantially aligning C-axis in a given direction is directly formed on the surface of the silicon sample

Quantitative evaluation device and method of atomic vacancy existing in silicon wafer

Growing community of inventors

Niigata, Japan

Hiroshi Kaneta