Hitachi, Ltd.

Hitachi-high-technologies Corporation

Hiroshi Kanekiyo

Mitsuru Suehiro

Tatehito Usui

Toshio Masuda

Hideyuki Yamamoto

Kazue Takahashi

Hiromichi Enami

Kiyoshi Fujiwara

Shoji Yoshinaga

Tomoyuki Tamura

Muneo Furuse

Zensuke Tamura

Fumio Shibata

Katsuaki Nagatomo

Kunihiko Koroyasu

Shoji Nomura

Masaru Fujimoto

A plasma processing apparatus includes a vacuum vessel with a sample stage having a mounting surface disposed in a process chamber, and a plate having substantially uniform thickness and electric power applied thereto constituting a ceiling of the chamber. The plate is disposed opposite to and substantially parallel with the sample stage so as to cover the whole area of the stage mounting surface and has a through-hole therein. An optical transmitter with a diameter larger than a diameter of the though-hole is disposed inside of the vacuum vessel and has an end face at a position above and spaced a small distance a back surface of the plate so as to receive light from the chamber via the through-hole. The optical transmitter is independently detachable with respect to the back surface of the plate.

Plasma processing system and apparatus and a sample processing method

A plasma processing apparatus having a sample stage disposed inside a vacuum chamber and a plate member disposed opposing to a sample which is placed on the sample stage and supplied with electric power. The sample is processed using a plasma generated between the sample stage and the plate member and a measuring port is disposed at a back side of the plate member. The measuring port includes an optical transmitter which receives light from a surface of the sample, and a seal which vacuum-seals between an atmospheric side and vacuum side of the vacuum chamber.

A plasma processing apparatus having a sample bench located in a vacuum chamber, a structure disposed at a position opposed to a sample placed on the sample bench and facing a plasma generated in the vacuum chamber, and at least one through-hole disposed in the structure through which a gas flows into the vacuum chamber. An optical transmitter is mounted on a back of the at least one through-hole through which light from the sample passes, which light is detected by way of the optical transmitter.

A plasma etching method and apparatus in which a processing gas is supplied from a shower plate arranged on an electrode opposed to an electrode for generating a plasma or a sample toward the sample center, and the gas is transformed into a plasma thereby to etch the sample. RF power is applied between a sample stage and the electrode to apply the energy to charged particles in the plasma to thereby etch the sample. In the process, apart from the incidence of the charged particles to the sample, the charged particles enter also the shower plate of the electrode by application of the RF power. The charged particles entering the processing gas supply holes of the shower plate are neutralized to prevent abnormal discharge on the shower plate and consequently suppress the generation of foreign matter.

Plasma etching method

The object of the present invention is to provide a plasma processing apparatus wherein plasma is generated in process chamber to treat a sample. Said plasma processing apparatus is further characterized in that multiple closely packed through-holes are formed on the plate installed on the UHF antenna arranged opposite to the sample, an optical transmitter is installed almost in contact with the back of the through-holes, and an optical transmission means is arranged on the other end of said optical transmitter, thereby measuring optical information coming from the sample and plasma through optical transmitter and optical transmission means by means of a measuring instrument. No abnormal discharge or particle contamination occur to through-holes even in long-term discharge process, and no deterioration occurs to the optical performance at the end face of the optical transmitter. Said plasma processing apparatus ensures stable and high precision measurement of the state of the surface of sample and plasma for a long time.

A centrifugal counter-flow liquid container contactor in which a light liquid and a heavy liquid are introduced into a rotary body fixed to a rotary shaft from the outer peripheral portion and the inner peripheral portion of the rotary body, respectively, so that the light liquid and heavy liquid make counter-flow contact with each other and, after the contact, the light liquid and heavy liquid are discharged from the inner peripheral portion and outer peripheral portion of the rotary body. Disc-shaped partition plates are disposed at both sides of radially extending pipes within the rotary body such as a light liquid introduction pipe, heavy liquid discharging pipe and so forth inserted into the rotary body, so as to separate these radial pipes from the region where the light and heavy liquids are mixed with each other.

Centrifugal counter-flow liquid contactor

A centrifugal type counterflow contact apparatus having a rotary body or drum intergrally mounted on a rotary shaft, and a plurality of ring members disposed within the rotary body such that circumferential slits are defined between the adjacent ring members in the axial direction of the rotary drum. The ring members have a cross sectional configuration inclined with respect to the axis of the rotary body. A light liquid is introduced into the periphery of the rotary body while a heavy liquid is introduced in the center portion of the rotary body. The heavy and light liquids flow countercurrently through the slits between the ring members under the centrifugal force produced by the rotation of the rotary body, whereby extractability can be improved and accumulation of solids entrained in the feed can be avoided.

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Kudamatsu, Japan

Hiroshi Kanekiyo