Tokyo Electron Limited

Hiroshi Ichinomiya

Kousuke Yoshihara

Akiko Kai

Kouichirou Tanaka

Masahiro Fukuda

Atsushi Ookouchi

Hirosi Nisihata

Taro Yamamoto

Keiichi Tanaka

Ryouichirou Naitou

Takahiro Shiozawa

Koichi Obata

Hiroki Tadatomo

A developing treatment method for performing a developing treatment on a resist film on a substrate, includes the following. (A) supplying a developing solution to the substrate and developing the resist film to form a resist pattern; (B) supplying a water-based cleaning liquid to the developed substrate to clean the substrate with the water-based cleaning liquid; (C) applying an aqueous solution of a water-soluble polymer to the substrate cleaned with the water-based cleaning liquid to form a hydrophilic layer having a hydrophilic property on a surface of the substrate; and (D) cleaning the substrate on which the hydrophilic layer has been formed, with a rinse liquid. (B) includes (a) accelerating a rotation speed of the substrate; and (b) after (a), decelerating the rotation speed of the substrate until a start of (C), wherein a deceleration in (b) is lower than an acceleration in (a).

Developing treatment method and developing treatment apparatus

A substrate processing method includes supplying a developing liquid configured to form a resist pattern onto a surface of a substrate on which a resist film is formed; performing multiple cycles of a cleaning processing of supplying a modifying liquid containing a modifying agent having a hydrophilic group onto the surface of the substrate on which the resist pattern is formed and supplying a rinse liquid configured to remove the modifying liquid onto the surface of the substrate; and drying the surface of the substrate after performing the multiple cycles of the cleaning processing.

Substrate processing method, recording medium and substrate processing apparatus

A developing treatment method performs a developing treatment on a resist film on a substrate. The method includes: a pattern forming step of forming a resist pattern by supplying a developing solution to the substrate and developing the resist film on the substrate; a coating step of coating the developed substrate with an aqueous solution of a water-soluble polymer; and a rinse step of cleaning the substrate by supplying a rinse solution to the substrate coated with the aqueous solution of the water-soluble polymer.

Developing treatment method, computer storage medium and developing treatment apparatus

When performing a liquid processing on a substrate W being rotated and removing a processing liquid by a cleaning liquid, a cleaning liquid nozzleconfigured to discharge a cleaning liquid slantly with respect to a surface of the substrate W toward a downstream side of a rotational direction of the substrate W and a gas nozzleconfigured to discharge a gas toward a position adjacent to a central portion side of the substrate W when viewed from a liquid arrival position R of the cleaning liquid are moved from the central portion side toward a peripheral portion side. A rotation number of the substrate is varied such that rotation number in a period during which the liquid arrival position R moves in the second region becomes smaller than a maximum rotation number in a period during which the liquid arrival position moves in the first region.

Substrate processing method, substrate processing apparatus and recording medium

There is provided a guide memberin which an inclined surfacethereof is inclined downwardly outwards from an edge portion of a rear surface of a horizontally held wafer W; and a cylindrical surrounding memberwhich surrounds the wafer W and in which an upper peripheral portion thereof is inwardly extended obliquely upwards. Further, the surrounding memberhas, at an inner surface side thereof, two groove portionsextended along an entire circumference and located above a height position of the horizontally held wafer W. If an air flow flows along the surrounding member, a vortex flow is formed within the groove portionsand stays therein. Thus, mist can be captured, so that the flow of the mist to the outside of a cup bodycan be suppressed. Accordingly, the adhesion of the mist to the wafer W can be suppressed.

Liquid processing apparatus and liquid processing method

A cleaning liquid and a gas are discharged in sequence to a central portion of a substrate while the substrate is being rotated, and after nozzles that discharge them are moved to a peripheral edge side of the substrate, discharge of the cleaning liquid is switched to a second cleaning liquid nozzle set at a position deviated from a movement locus of the first cleaning liquid nozzle. Both of the nozzles are moved toward the peripheral edge side of the substrate while discharging the cleaning liquid and discharging the gas so that a difference between a distance from the discharge position of the second cleaning liquid nozzle to the central portion of the substrate and a distance from the discharge position of the gas nozzle to the central portion of the substrate gradually decreases.

Substrate cleaning apparatus, substrate cleaning method and non-transitory storage medium

A substrate cleaning method is capable of preventing a liquid stream on a substrate from being cut and circuit patterns thereon from being damaged. The substrate cleaning method includes a liquid film forming process that forms a liquid film on an entire substrate surface by supplying a cleaning liquid L from a central portion of the substrate W toward a peripheral portion thereof while rotating the substrate; a drying region forming process that discharges a gas G on the substrate surface and removes the cleaning liquid on the substrate surface; and a residual liquid removing process that removes the cleaning liquid remaining between the circuit patterns by discharging a gas G while moving in a diametrical direction of the substrate.

Growing community of inventors

Koshi, Japan

Hiroshi Ichinomiya