Fujitsu Corporation

Hiroshi Horie

Yoshihiro Arimoto

Sadahiro Kishii

Takashi Ito

Akiyoshi Hatada

Ko Nakamura

Rintaro Suzuki

Toshihiro Sugii

Fumitoshi Sugimoto

Atsushi Fukuroda

Tetsu Fukano

A slurry contains MnO.sub.2 or other manganese oxide as a primary component of abrasive particles. Further, a polishing process using such a manganese oxide abrasive and a fabrication process of a semiconductor device using such a polishing process are disclosed.

Slurry containing manganese oxide

Fabrication process of a semiconductor device using a slurry containing

In a semiconductor device, first and second substrates are supported with respective first major surfaces in opposing, parallel and spaced relationship. A conductor layer of low resistivity material is provided on a selected one of the opposing and spaced major surfaces, in intimate contact and spaced from the opposed major surface of the other substrate. An active device is formed in the first substrate with a region electrically connected to the conductor layer. A contact region is exposed at the second major surface of the first substrate and extends through the first substrate and into electrical contact with the conductor layer.

SOI device having a buried layer of reduced resistivity

An apparatus and method for polishing a semiconductor wafer. A polisher includes a supporting plate having a conductive film and a polishing cloth formed on the conductive film of the supporting plate. The polishing cloth has a plurality of openings to expose the conductive film. A wafer holder has a conductive wafer holding surface to hold a semiconductor wafer having current detective patterns and an insulating film covering the current detective patterns. A polishing slurry supply device supplies a polishing slurry including ions to either the polishing cloth or the semiconductor wafer. A current detecting device, connected to the supporting plate and the wafer holder, detects a magnitude of a current flowing across the supporting plate and the wafer holder through the conductive wafer holding surface, the semiconductor wafer held by the wafer holder, the current detective patterns of the semiconductor wafer, the polishing slurry filled in the openings of the polishing cloth, and the conductive film.

Apparatus and method for uniformly polishing a wafer

A bipolar transistor includes a substrate, an insulating layer formed on the substrate, and a semiconductor layer having a bottom surface and side surfaces surrounded by the insulating layer. The semiconductor layer includes a collector region formed in a first surface portion of the semiconductor layer, and a collector lead region having a concentration higher than that of the collector region. The collector read region includes a silicon single crystal layer formed in a second surface portion of the semiconductor layer, and a polysilicon layer having side surfaces surrounded by the silicon single crystal layer. A base region is formed on the collector region, and an emitter region is formed in the base region.

Bipolar transistor having a buried collector layer

A method for fabricating a semiconductor device comprises the steps of forming a depression on a substrate, bonding a plate of a single crystal semiconductor material on the substrate to establish a contact such that a closed space is formed in the substrate in correspondence to the depression, reducing the thickness of the plate, forming a penetrating opening through the plate in communication to the space to form a bridging part in the plate as a region left from the formation of the penetrating opening, forming an insulation film to cover at least a lower major surface and both side walls of the bridging part, filling the space by depositing polysilicon through the penetrating opening, providing a conductivity to the polysilicon that fills the space, removing the polysilicon that has been deposited on the upper surface of the bridging part to expose a crystal surface of the semiconductor material forming the plate, and forming an active device on the bridging part.

SOI device and a fabrication process thereof

A semiconductor device with an electrode wiring layer including an upper conductive layer and, interspaced with a barrier layer used for reaction prevention, a lower conductive layer contacting an active region. The barrier layer consists of an insulating film having a thickness thin enough for flow of a tunnel current.

Semiconductor device

A bipolar or MOS semiconductor device is produced by self-alignment by (a) forming an insulating film on a semiconductor substrate, (b) forming a first conductive film, on the semiconductor substrate and (c) forming a first masking film having a window. The conductive film is then (d) anisotropically etched to form an opening and then, (e) transversely etched to form a protruding portion of the first masking film. A second masking film is (f) forming a second masking film on the insulating film through the window, (g) an uncovered portion of the insulating film under the protruding portion, is etched and (h) a second conductive film connecting the first conductive film and the exposed portion of the semiconductor substrate is formed.

Growing community of inventors

Kawasaki, Japan

Hiroshi Horie