Fujitsu Corporation

Fujitsu Microelectronics Limited

Fujitsu Semiconductor Limited

Hiroshi Daiku

Asao Kokubo

Shigeru Nishio

Jun Funakoshi

Tadao Inoue

Yoichiro Sakachi

Norihiro Yoshida

Masaji Dohi

Yutaka Takeda

Satoshi Kawata

Tsuyoshi Higuchi

Iwao Sugiyama

A method for calculating a shift amount of a microlens from a position of a light receiving element arranged in a pixel of an image pickup element is provided. The microlens collects incident light from an image pickup lens. The method comprises: acquiring an incident angle characteristic value indicating a relation between an arranged position of the pixel and an incident angle of the incident light to the pixel; calculating a sampled shift amount of the microlens from the position of the light receiving element corresponding the incident angle characteristic value based on light collection efficiency of the incident light; approximating the sampled shift amount by a second or higher order function to calculate a shift amount characteristic function indicating a relation between the arranged position and the shift amount; and calculating the shift amount of the pixel using the shift amount characteristic function.

Method for calculating shift amount of image pickup element and image pickup element

A solid state image sensing device in which many pixels are disposed in a matrix on a two-dimensional plane comprises a plurality of light receiving devices disposed in such a way that a center interval may periodically change in a column direction and/or a row direction, and a plurality of micro-lenses, for collecting an incident light of each light receiving device, wherein a center interval periodically changes in accordance with the periodic change of the center interval of the light receiving device.

Solid state image sensing device

The challenge of the present invention is to suppress a variation in brightness of an image and make a reference value of a black level converge at an appropriate value in a short time. A condition judgment circuit judges whether or not a frame of an amount of change in gains of a variable gain amplifier being equal to or greater than a threshold continues for a predefined frames or more. If a frame of an amount of change in the gains being equal to or greater than the threshold continues for the predefined frames, a black level value of the current frame is set for new black level reference. If not continues for the predetermined number, the previous black level reference value is retained in lieu of correcting the black level.

Semiconductor integrated apparatus and black level correction method for image sensor

A semiconductor integrated circuit includes a check unit which compares a value of a pixel of interest with values of neighboring pixels contained in an image signal supplied from an image sensor, and determines based on the comparison whether the pixel of interest is defective, and a defect correcting unit which corrects the value of the pixel of interest by using values of surrounding pixels in response to the determination by the check unit that the pixel of interest is defective.

Circuit and method for correction of defect pixel

An automatic gain control circuit generates, based on comparison between an average brightness of brightness data output for each frame from an image sensor and a target brightness, an integration time adjustment signal for adjusting an integration time during which the image sensor is exposed, a gain adjustment signal for adjusting gain of an amplifier that amplifies an output signal of the image sensor, and a frame rate adjustment signal for changing a frame rate. The automatic gain control circuit includes an exposure control circuit for adjusting a blanking time of each frame and generating, as the frame rate adjustment signal, a maximum integration time adjustment signal for switching a maximum integration time of the image sensor.

Automatic gain control circuit with exposure control circuit

A solid-state imaging device includes an image sensor configured to output image data generated by image sensing elements together with a timing signal, and an image processing unit configured to output the image data supplied from the image sensor having undergone predetermined signal processing a predetermined delay time after a timing indicated by the timing signal, the image sensor further configured to make the timing signal indicate a first timing that is at least the processing delay time earlier than a second timing indicative of a start of a valid period of the image data, and to output dummy data from the first timing to the start of the valid period of the image data.

Reduction of effect of image processing on image sensor

A flicker noise detecting method that shortens the time for detecting flicker noise. The method sets two of a plurality of horizontal lines forming a frame as average brightness calculation regions that are separated from each other by the predetermined number of the horizontal lines, calculates an average brightness of the two average brightness calculation regions for each of three frames, multiplies each average brightness by a product sum calculation coefficient, and adds the products to generate a sum and generate a detection signal of flicker noise based on the sum. The product sum calculation coefficient is obtained by plotting one cycle of a sine wave and one cycle of a cosine wave at intervals of &#x3c0;/3.

Method and circuit for detecting flicker noise

A semiconductor integrated circuit includes a differential calculating unit which obtains a differential between a value of a pixel of interest and values of surrounding pixels contained in an image signal supplied from an image sensor, a dead-zone generating unit which defines a predetermined range of pixel values, and a comparison unit which checks whether the differential falls outside the predetermined range, wherein contour enhancement is applied to the pixel of interest in response to a determination by the comparison unit that the differential falls outside the predetermined range.

Circuit and method for contour enhancement

It is an object of the invention to provide a method of reducing flicker noises in an X-Y address type solid-state image pickup device for reducing flicker noises generated by a fluorescent light for room illumination when taking a picture in door. A configuration is provided in which signal storage time ts resulting in no flicker noise under a fluorescent lamp having an emission frequency of 120 Hz is preset (step S); average luminance of image data is calculated for each frame in a predetermined average luminance detection area allocated in the frame (step S); a difference in average luminance is calculated between frames (step S); and the signal storage time ts is changed based on the difference in luminance (steps S, Sand S).

Method of reducing flicker noises of X-Y address type solid-state image pickup device

A solution of precursor of a pyroelectric material, e.g. BaSrTiO.sub.3, is coated on a surface of a silicon wafer having an array of mesas corresponding to infrared sensor elements to be formed thereon, and the pyroelectric material precursor coating is dried and then is subjected to a heat treatment for converting thereof into a pyroelectric thin film (sol-gel process). The internal stress in the pyroelectric thin film formed as thick as 1 .mu.m by repeating the process concentrates in the region (groove) between the mesas, hence cracks occurring in the film in connection with the stress are limited within the region and the portions of the film on the mesas can be free from the cracks. The pyroelectric thin film in the groove is selectively removed. An infrared image sensing device comprising sensor elements of uniform characteristics and high reliability is provided.

Infrared detection device comprising a pyroelctric thin film and method

An infrared detection device has a substrate with a plurality of hollow mesas and a pyroelectric thin film formed on the surface having the mesas.

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Kawasaki, Japan

Hiroshi Daiku