Canon Anelva Corporation

Hiroshi Akasaka

Yasushi Kamiya

Naoko Matsui

Atsushi Sekiguchi

Masayoshi Ikeda

Yoshimitsu Kodaira

Yuta Konno

Eiji Ozaki

Kiyotaka Sakamoto

Tomohiko Toyosato

Kazuhiro Kimura

Ryo Matsuhashi

The present invention provides a plasma processing apparatus which reduces damage from plasma generated in a discharge vessel and lengthens the replacement cycle of the discharge vessel. A plasma processing apparatusis provided with a processing chamberpartitioning a processing space, a discharge vesselwhose one end opens facing inside the processing chamberand the other end is closed, an antennawhich is disposed around the discharge vesseland generates an induced electric field to generate plasma in the discharge vesselunder reduced pressure, and an electromagnetwhich is arranged around the discharge vesseland forms a divergent magnetic field in the discharge vessel. The discharge vesselhas at its closed end portion a protrusionprojecting toward the processing chamber

Plasma processing apparatus and device manufacturing method

To provide an ion beam etching method which enables a highly uniform IBE process even under a low-angle-incident static condition, without increase in the size of an apparatus. The ion beam etching method includes: changing a position of an opening portion with respect to a substrate; etching the substrate with an ion beam passing through the opening portion; and reducing a tilt angle as a center of a site where the ion beam is incident on the substrate moves away from the ion source.

Ion beam etching method and ion beam etching apparatus

An ion beam etching method includes applying a positive voltage for extracting ions into a vacuum container to a first electrode, under a first condition where irradiation of a substrate with an ion beam is blocked off by a shutter, generating plasma in an internal space under the first condition, forming the ion beam by forming, under the first condition, a second condition where a positive voltage is applied to the first electrode and a negative voltage is applied to a second electrode, and moving the shutter and processing the substrate by irradiating the substrate with the ion beam.

Ion beam processing method and ion beam processing apparatus

An object of the present invention is to provide a method which enable a material to be fully embedded into a recess portion with a deposition film left in the recess portion. A method in one embodiment comprises: a first irradiation step of irradiating a deposition film formed on an opening portion of a recess portion in a substrate with a particle beam in a direction at a first angle with respect to a substrate in-plane direction, to remove part of the deposition film in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the deposition film with the particle beam in a direction at a second angle which is closer to perpendicular to the substrate in-plane direction than the first angle is, to remove part of the remaining deposition film in the thickness direction.

Substrate processing method and method of manufacturing semiconductor device

The present invention provides a manufacturing method of a magneto-resistance effect element, in which the step coverage of a formed film can be enlarged and also the film can be deposited in a low temperature range. In an embodiment of the present invention, an insulating protective layer is formed on a multilayered structure by a plasma CVD apparatus in which a plasma source and a film deposition chamber are separated from each other by a partition wall plate. According to the present method, it is possible to deposit the protective layer without inviting the degradation of a magnetic characteristic and also to perform low temperature film deposition even at a temperature lower than 150&#xb0; C. Hence, it is possible to deposit the protective layer while leaving resist and also to reduce the number of steps in the manufacturing of the magneto-resistance effect element having a multilayered structure.

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Kawasaki, Japan

Hiroshi Akasaka