Fujitsu Corporation

Fujitsu Semiconductor Limited

Hirosato Ochimizu

Toshihide Kikkawa

Atsuhiro Tsukune

Tamotsu Owada

Hiroshi Kudo

Junji Saito

Hikaru Ohira

Hitoshi Tanaka

Yasuyoshi Mishima

Tatsuya Ohori

A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.

Semiconductor device having insulating layers containing oxygen and a barrier layer containing manganese

A semiconductor device has a semiconductor substrate having a first surface and a second surface, a through electrode penetrating through the semiconductor substrate and having a protrusion protruding from the second surface, and an insulation layer on the second surface, which covers the side surface of the protrusion, has an opening through which to expose the end surface of the protrusion, and has a thickness greater than the length of the protrusion.

Semiconductor device and manufacturing method of semiconductor device

A method of manufacturing a semiconductor device includes: forming a first electrode on a first semiconductor substrate; coating the semiconductor substrate with an insulating material having a first viscosity at a first temperature, having a second viscosity lower than the first viscosity at a second temperature higher than the first temperature, and having a third viscosity higher than the second viscosity at a third temperature higher than the second temperature; and forming a first insulating film by curing the insulating material. In this method, the forming the first insulating film includes: bringing the insulating material to the second viscosity by heating the insulating material under a first condition; and bringing the insulating material to the third viscosity by heating the insulating material under a second condition. The first condition and the second condition are different in their temperature rising rate.

Semiconductor device and method of manufacturing the same

A transistor formed on a semiconductor substrate is covered with a first insulating film, and first conductive vias which pierce the first insulating film and which reach the transistor and a second conductive via which pierces the first insulating film and which reaches an inside of the semiconductor substrate are formed. After the formation of the first conductive vias and the second conductive via, a second insulating film is formed over the first insulating film. Conducive portions connected to the first conductive vias leading to the transistor and a conductive portion connected to the second conductive via which reaches the inside of the semiconductor substrate are formed in the second insulating film. By doing so, a multilayer interconnection is formed.

Semiconductor device fabrication method

On an insulation layerformed on a silicon substrate, there are formed in an NMOS transistor regionan NMOS transistorcomprising a silicon layer, a lattice-relaxed silicon germanium layerformed on the silicon layer, a tensile-strained silicon layerformed on the silicon germanium layerand a gate electrodeformed on the silicon layerwith a gate insulation filmformed therebetween and in a PMOS transistor regiona PMOS transistorcomprising a silicon layer, a compression-strained silicon germanium layer formed on the silicon layerand a gate electrodeformed on the silicon germanium layerwith a gate insulation filmformed therebetween.

Semiconductor device and method for fabricating the same

The present invention includes a process of growing a compound semiconductor layer locally, after applying radical particles that do not become an etchant of a compound semiconductor layer to an insulating mask so as to terminate the surface of the insulating mask in a state that the compound semiconductor layer is covered with the insulating mask, on the surface of the compound semiconductor layer exposed from the insulating mask.

Compound semiconductor device

A semiconductor device includes a buffer layer of AlGaAs that contains oxygen with a concentration level in the approximate range of 8.times.10.sup.17 cm.sup.-3 to 6.times.10.sup.19 cm.sup.-3, and carbon with a concentration level in the approximate range of 2.times.10.sup.16 cm.sup.-3 to 2.times.10.sup.17 cm.sup.-3. A lattice constant of the AlGaAs buffer layer is larger than a lattice constant of the GaAs substrate so a lattice misfit of the AlGaAs layer with respect to the GaAs substrate is equal to or varies by no more than 2.times.10.sup.5 from a corresponding lattice misfit between an undoped AlGaAs crystal with respect to the GaAs substrate. Oxygen atoms occupy an interstitial site, creating a deep impurity level that suppresses side gate effect.

Semiconductor device having improved electronic isolation

Method of forming compound semiconductor device

A high electron mobility transistor type group III-V compound semiconductor device includes a substrate of a group III-V compound semiconductor, an electron transfer layer of a group III-V compound semiconductor formed on the substrate, an impurity doped electron supply layer of a group III-V compound semiconductor having a wider band gap and smaller electron affinity than the electron transfer layer, and a spacer layer of a group III-V compound semiconductor having a lattice mismatch with the electron supply layer, the spacer layer being formed between the electron transfer layer and the electron supply layer. A HEMT type group III-V compound semiconductor device is provided which uses an Si-doped electron supply layer of material such as InGaP other than AlGaAs and has good device properties.

Group III-V interdiffusion prevented hetero-junction semiconductor device

In an apparatus for forming a film of MOCVD, gas source MBE or the like, there is provided a gas supply pipe for supplying gas obtained by gasifying a liquid or solid organic metal raw material to a reaction chamber. A mechanism in which a pressure gauge is fitted in the vicinity of a gas generating source in the gas supply pipe and the gas supply quantity from the gas generating source is regulated based on an indicated value of the pressure gauge so as to suppress variation of the gas pressure is installed in the apparatus for forming a film. There is a heating system for heating the organic metal raw material or an ultrasonic vibrator for applying ultrasonic vibration to the organic metal raw material as the mechanism for regulating the gas supply quantity, and the gasified quantity of the organic metal raw material is varied by regulating the heating temperature of the heating system or by varying the output of the ultrasonic vibrator.

Growing community of inventors

Kawasaki, Japan

Hirosato Ochimizu